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    Isolation and synthesis of a novel beta-carboline guanidine derivative tiruchanduramine from the Indian ascidian Synoicum macroglossum

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    The isolation and synthesis of the racemic form of a novel beta-carboline guanidine alkaloid, tiruchanduramine, a potent alpha-glucosidase inhibitor from the Indian ascidian, Synoicum macroglossum has been achieved. (c) 2005 Elsevier Ltd. All rights reserved

    /TiN Capacitors

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    In recent years, hafnium zirconium oxide (HZO) has received significant attention of the research community due to the demontsrattion of ferroelectricity at sub 10 nm thickness and good CMOS-compatibility. However, ferroelectricity in HZO is dependent on various factors such as the HZO composition, materials used as top or bottom electrode, post metallization technique, annealing pressure and temperature etc. Herein, we have systematically investigated the effect of high pressure post metallization annealing (HPPMA) temperature on the ferroelectric properties of TiN/Hf0.25Zr0.75O2/TiN capacitors. Hf0.25Zr0.75O2, that show antiferroelectric behavior in rapid thermal annealing, demonstrate antiferroelectric to ferroelectric phase transition depending on the HPPMA temperature. Maximum remanent polarization (P-r) of similar to 29 mu C/cm(2) is achieved for HPPMA temperature 550 degrees C whereas the maximum dielectric constant (k) of similar to 46 is achieved for HPPMA temperature 350 degrees C. The interfacial capacitance of the MFM capacitors increased with increasing the HPPMA annealing temperature. The results obtained in this study open up the possibility of achieving high-k ferroelectric capacitors using Zr rich HZO films that can be applicable to various electronic devices

    sj-docx-2-pie-10.1177_09544089231151541 - Supplemental material for Prediction of stability parameters of ferric oxide nanofluids using response surface methodology based on desirability approach

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    Supplemental material, sj-docx-2-pie-10.1177_09544089231151541 for Prediction of stability parameters of ferric oxide nanofluids using response surface methodology based on desirability approach by KPV Krishna Varma, Kavati Venkateswarlu, PV Durga Prasad and Uday Kumar Nutakki in Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering</p

    ADDITIVE MANUFACTURING

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    &lt;p&gt;In the rapidly evolving landscape of manufacturing, Additive Manufacturing (AM) has emerged as a game-changer, redefining the way we conceptualize, design, and produce objects. This book takes you on a comprehensive journey through the world of AM, providing in-depth insights into its principles, processes, and applications.&lt;/p&gt;&lt;p&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Chapter 1 serves as our launching pad into the realm of AM. We begin by providing an overview of Additive Manufacturing, exploring its core components, and emphasizing the essence of creating objects layer by layer. We delve into the diverse techniques that fall under the AM umbrella, showcasing its versatility in single or multi-step processes. Guidelines for successful Additive Production are elucidated, setting the stage for a deep dive into the world of AM. The future of industry and Additive Manufacturing, predicting the synergistic integration of software development, artificial intelligence, and the potential of distributed production.&lt;/p&gt;&lt;p&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; The chapter culminates in a trio of illuminating case studies from the automobile, aerospace, and healthcare sectors, showcasing tangible evidence of AM's transformative power. Chapter 2, the journey continues with a deep dive into Design for Additive Manufacturing (DFAM), exploring the intricacies of cellular materials, requirements, and a robust framework for DFAM. We dissect the DFAM method, system, and technologies, unravelling the intricate dance between conceptual design and manufacturability.&lt;/p&gt;&lt;p&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Lattice structures and optimization take centre stage, followed by a comprehensive exploration of CAD model preparation and information exchange for quick modelling. We dissect STL data manipulation, examining data redundancy, topological and geometric challenges, and alternative RP interfaces. The chapter concludes with a focus on tool path generation and design rules tailored to extrusion-based AM, offering a comprehensive toolkit for successful DFAM.&lt;/p&gt;&lt;p&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; In Chapter 3, we venture into the world of VAT Polymerization and Directed Energy Deposition, exploring vat photopolymerization, digital light processing, digital light synthesis, and the benefits and drawbacks of these techniques. We unveil Continuous Liquid Interface Production (CLIP) technology, providing insights into its materials, functioning, advantages, and key functions. Directed Energy Deposition takes the stage, with a deep dive into polymer DED technology, its advantages, disadvantages, and applications. Laser Engineered Net Shaping (LENS) is explored in detail, offering a glimpse into its transformative potential.&lt;/p&gt;&lt;p&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Chapter 4 delves into Powder Bed Fusion and Material Extrusion, covering selective laser sintering, selective laser melting, electron beam powder bed fusion, and material extrusion. We explore the mechanisms and advantages of selective laser sintering, its applications, and the materials that fuel its capabilities. We delve into the intricacies of selective laser melting, its process, materials, advantages, and applications. Electron Beam Powder Bed Fusion is examined, revealing the inner workings, materials, advantages, and limitations of this transformative technology. Material extrusion is explored, uncovering its available equipment, advantages, disadvantages, and diverse technology applications.&lt;/p&gt;&lt;p&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Chapter 5 explores other additive manufacturing processes, such as binder jetting, material jetting, sheet lamination, and ultrasonic additive manufacturing. We delve into the materials used in binder jetting, its technology applications, and the various types of material jetting. The advantages and disadvantages of material jetting are examined, followed by a deep dive into sheet lamination, its processes, and applications.&lt;/p&gt;&lt;p&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; As we navigate through this comprehensive guide, we also provide a section of Two-Mark Questions for readers to test their understanding and reinforce key concepts. This book is designed to serve as a comprehensive resource for students Additive Manufacturing.&nbsp;&lt;/p&gt;&lt;p&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Any unintended errors, mistakes, omissions, and improvements of this book are most welcome.&lt;/p&gt

    sj-docx-1-pie-10.1177_09544089231151541 - Supplemental material for Prediction of stability parameters of ferric oxide nanofluids using response surface methodology based on desirability approach

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    Supplemental material, sj-docx-1-pie-10.1177_09544089231151541 for Prediction of stability parameters of ferric oxide nanofluids using response surface methodology based on desirability approach by KPV Krishna Varma, Kavati Venkateswarlu, PV Durga Prasad and Uday Kumar Nutakki in Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering</p

    Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors

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    In this study, we have carried out an in-depth analysis on the role of high-pressure annealing (HPA) conditions on ferroelectricity as well as the interfacial property of HfxZr1-xO2 (HZO) capacitors in metal-ferroelectric-metal (MFM) structure. Unlike conventional 1:1 HZO films, HZO demonstrates the highest ferroelectricity at 1:3 Hf:Zr ratio in HPA and a significantly higher maximum remanent polarization (P-r) of 31 mu C/cm(2) was achieved as compared to 19 mu C/cm(2) obtained in rapid thermal annealing (RTA) (HZO [1:1]). To understand the influence of HPA conditions, HZO [1:3] capacitors are annealed at various temperatures (300 degrees C, 400 degrees C, 500 degrees C, and 600 degrees C) and pressures (1, 50, and 200 atm). Ferroelectricity in HZO is found to enhance with increasing HPA temperature or pressure due to higher ferroelectric phase formation as revealed by grazing incidence X-ray diffractometer (GIXRD) analysis. Transient pulse switching measurement suggests the reduction in the effective thickness of the interfacial nonferroelectric film at a high HPA temperature or pressure which was also validated by impedance analysis. Further, impedance analysis reveals a reduction in the number of oxygen vacancy defects with increasing annealing temperature or pressure implying a phase transition from the tetragonal phase of nonferroelectric layer to the ferroelectric orthorhombic phase. In addition, excellent endurance property till 10(9) cycles with reduced wake-up effect was observed in HZO [1:3] capacitors with increasing the HPA temperature, while higher annealingpressureis foundto increase P-r without affecting its endurance property. The results obtained herein can be of significant scientific importance, especially to achieve enhanced ferroelectric property with reduced wake-up effect in Zr-rich HZO ferroelectrics.

    On acyclic edge-coloring of complete bipartite graphs

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    An acyclic edge-coloring of a graph is a proper edge-coloring without bichromatic (2-colored) cycles. The acyclic chromatic index of a graph G, denoted by a′(G), is the least integer k such that G admits an acyclic edge-coloring using k colors. Let Δ=Δ(G) denote the maximum degree of a vertex in a graph G. A complete bipartite graph with n vertices on each side is denoted by Kn,n. Basavaraju, Chandran and Kummini proved that a′(Kn,n)≥n+2=Δ+2 when n is odd. Basavaraju and Chandran provided an acyclic edge-coloring of Kp,p using p+2 colors and thus establishing a′(Kp,p)=p+2=Δ+2 when p is an odd prime. The main tool in their approach is perfect 1-factorization of Kp,p. Recently, following their approach, Venkateswarlu and Sarkar have shown that K2p−1,2p−1 admits an acyclic edge-coloring using 2p+1 colors which implies that a′(K2p−1,2p−1)=2p+1=Δ+2, where p is an odd prime. In this paper, we generalize this approach and present a general framework to possibly get an acyclic edge-coloring of Kn,n which possesses a perfect 1-factorization using n+2=Δ+2 colors. In this general framework, using number theoretic techniques, we show that Kp2,p2 admits an acyclic edge-coloring with p2+2 colors and thus establishing a′(Kp2,p2)=p2+2=Δ+2 when p is an odd prime

    THE ABSORPTION SPECTRUM OF CF2CF_{2}

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    1^{1} P. Venkateswarlu, Phys. Rev. 77, 676 (1950).Author Institution: Division of Pure Physics, National Research CouncilA band system (near 2500A˚2500 {\AA}) attributed to CF2CF_{2} by Venkateswarlu1Venkateswarlu^{1} has been observed in absorption with a high-resolution spectrograph. Rotational analysis of several of the bands confirmed the identity of the carrier, established that the bands are perpendicular-type transitions rather than parallel-type (as was initially suggested1suggested^{1}), and yielded the geometrical structure of the molecule in both electronic states. Observations of the absorption spectrum at widely different effective vibrational temperatures allowed an unambiguous vibrational analysis of the transitions involving ν2\nu_{2}. A search for other electronic transitions of CF2CF_{2} (in absorption) between 9000A˚9000 {\AA} and 1300A˚1300 {\AA} yielded only two systems, near 1500A˚1500 {\AA} and 1300A˚1300 {\AA}, which may be attributed to this molecule. In addition, one new transition of CF was identified near 1680A˚1680 {\AA}

    Remarks on the k-error linear complexity of p(n)-periodic sequences

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    Recently the first author presented exact formulas for the number of 2ⁿn-periodic binary sequences with given 1-error linear complexity, and an exact formula for the expected 1-error linear complexity and upper and lower bounds for the expected k-error linear complexity, k >2, of a random 2ⁿn-periodic binary sequence. A crucial role for the analysis played the Chan-Games algorithm. We use a more sophisticated generalization of the Chan-Games algorithm by Ding et al. to obtain exact formulas for the counting function and the expected value for the 1-error linear complexity for pⁿn-periodic sequences over Fp, p prime. Additionally we discuss the calculation of lower and upper bounds on the k-error linear complexity of pⁿn-periodic sequences over Fp
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