55 research outputs found
RD53 Collaboration and CHIPIX65 Project for the development of an innovative Pixel Front End Chip for HL-LHC
Full text linkRAPS: an innovative active pixel for particle detection integrated in CMOS technology
No full textIn this paper we discuss some design, implementation and test issues, with respect to the development of the RAPS01
chip in the framework of the Radiation Active Pixel Sensors (RAPS) INFN project. The project aimed at verifying
feasibility of smart, high-resolution pixel arrays with a fully standard, submicron CMOS technology for particle
detection purposes. Layout optimization of the pixel, including sensitive element and local read and amplification
circuits has been carried out. Different basic pixel schemes and read-out options have been proposed and devised. Chip
fabrication has been completed and test phase is now under way:to this purpose a suitable test environment has been
devised and test strategies have been planned
RAPS: an Innovative Active Pixel for Particle Detection Integrated in CMOS Technology
No full textAbstract: In this paper we discuss some design, implementation and test issues, with respect to the development of the RAPS01 chip in the framework of the Radiation Active Pixel Sensors (RAPS) INFN project. The project aimed at verifying feasibility of smart, high-resolution pixel arrays with a fully standard, submicron CMOS technology for particle detection purposes. Layout optimization of the pixel, including sensitive element and local read and amplification circuits has been carried out. Different basic pixel schemes and read-out options have been proposed and devised. Chip fabrication has been completed and test phase is now under way: to this purpose a suitable test environment has been devised and test strategies have been planned. (C) 2003 Elsevier B.V. All rights reserved
Test of a MAPS realized in standard non-epitaxial CMOS 0.18um technology
No full textAn active pixel sensor has been developed using standard CMOS technology, UMC 0:18 mm with no epitaxial layer, with pixel size 4:4 4:4 mm, in the framework of the INFN RAPS project. In this work we will report on the results obtained using several types of ionizing radiation sources (laser, X-ray tubes, b and g) to test extensively the device. Some of the main results obtained are: a signal/noise value for minimum ionizing particles of about 20, a very good linearity of the response, a good spatial confinement of the signal (cluster size of the order of few pixels)
High-resolution CMOS Particle Detectors: Design and Test Issues
No full textIn this paper, we discuss some issues related to the design, implementation and test of a CMOS active pixel sensor chip (RAPS01), developed in the framework of RAPS (Radiation Active Pixel Sensors) INFN project. Two different basic pixel schemes have been proposed The first one is based on a standard Active Pixel Sensor (APS) architecture, while a second architecture, named Weak Inversion Pixel Sensor (WIPS) exploits a different circuitry which allows for "sparse" access mode and thus for speeding-up the read-out phase. Device simulation has been extensively used to estimate the photodiode response for different technologies (thus addressing selection of the silicon foundry). Chip fabrication has been completed and a preliminary test phase has been performed. A suitable test environment has been devised and test strategies have been planned Future work is also outlined, aimed at the fabrication of a second version of the chip, more effectively integrating smart circuitry
Test of a MAPS realized in standard non-epitaxial CMOS technology
No full textAn active pixel sensor has been developed using standard CMOS technology, UMC 0 :18 mm with no epitaxial layer, with pixel size
4:4 4 :4 m m, in the framework of the INFN RAPS project. In this work we will report on the results obtained using several types of
ionizing radiation sources (laser, X-ray tubes, b and g) to test extensively the device. Some of the main results obtained are: a signal/noise
value for minimum ionizing particles of about 20, a very good linearity of the response, a good spatial confinement of the signal (cluster size of the order of few pixels)
Design, Fabrication and Test of CMOS Active-Pixel Radiation Sensors
No full textIn this paper, we discuss some issues related to the
design, implementation, and test of a CMOS active pixel sensor
chip (RAPS01), developed in the framework of the radiation active
pixel sensors (RAPS) INFN project. Two different basic pixel
schemes have been proposed. The first one is based on a standard
active pixel sensor (APS) architecture, while a second architecture,
named weak inversion pixel sensor (WIPS) exploits a different
circuitry which allows for “sparse” access mode and thus
for speeding-up the readout phase. Chip fabrication has been completed
and a preliminary test phase has been performed. A suitable
test environment has been devised and test strategies have been
planned. Preliminary test results, featuring a static and dynamic
characterization of the basic sensitive elements are outlined. Future
works are also outlined, aimed at the optimization of a second
version of the chip, more effectively integrating smart circuitry
Design, Fabrication, and Test of CMOS Active-Pixel Radiation Sensors
No full textIn this paper, we discuss some issues related to the design,
implementation, and test of a CMOS active pixel sensor chip (RAPS01),
developed in the framework of the radiation active pixel sensors
(RAPS) INFN project. Two different basic pixel schemes have been
proposed. The first one is based on a standard active pixel sensor
(APS) architecture, while a second architecture, named weak inversion
pixel sensor (WIPS) exploits a different circuitry which allows for
"sparse" access mode and thus for speeding-up the readout phase. Chip
fabrication has been completed and a preliminary test phase has been
performed. A suitable test environment has been devised and test
strategies have been planned. Preliminary test results, featuring a
static and dynamic characterization of the basic sensitive elements
are outlined. Future works are also outlined, aimed at the
optimization of a second version of the chip, more effectively
integrating smart circuitry
Raccolta di grafici relativi ai parametri di Adone
No full text<p> Raccolta di grafici relativi ai parametri di Adone.</p>
Appunto sulle correnti circolanti in Adone nel periodo 30 maggio - 2 luglio 1968
No full text<p>È stato riscontrato un errore sul valore della corrente circolante nella macchina durante i turni assegnati agli sperimentali. Viene di seguito indicata la valutazione dell'errore ac canto ai giorni di turno.</p>
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