20 research outputs found
sj-pdf-2-jpc-10.1177_21501319231169991 – Supplemental material for Mpox Case Reports in an Urban Homeless Population and a Proof of Concept for a Street-Based Mobile Mpox Vaccination Clinic
No full textSupplemental material, sj-pdf-2-jpc-10.1177_21501319231169991 for Mpox Case Reports in an Urban Homeless Population and a Proof of Concept for a Street-Based Mobile Mpox Vaccination Clinic by Justin Zeien, Jaime Vieira, Jeffery Hanna, Likith Surendra, Jake Stenzel, Alma Ramirez, Catherine Miller and Cecilia Rosales in Journal of Primary Care & Community Health</p
sj-pdf-1-jpc-10.1177_21501319231169991 – Supplemental material for Mpox Case Reports in an Urban Homeless Population and a Proof of Concept for a Street-Based Mobile Mpox Vaccination Clinic
No full textSupplemental material, sj-pdf-1-jpc-10.1177_21501319231169991 for Mpox Case Reports in an Urban Homeless Population and a Proof of Concept for a Street-Based Mobile Mpox Vaccination Clinic by Justin Zeien, Jaime Vieira, Jeffery Hanna, Likith Surendra, Jake Stenzel, Alma Ramirez, Catherine Miller and Cecilia Rosales in Journal of Primary Care & Community Health</p
Effect of forging on mechanical properties of rice husk ash-silicon carbide reinforced Al1100 hybrid composites
No full textCharacterization and study of mechanical and tribological properties on titanium di oxide (TiO2) coated 304L stainless steel
No full textCHARACTERISATION OF TETRA AMELIA SYNDROME BY SNP BASED ON COMPUTATIONAL GENOTYPING ANALYSIS
No full text  Objective: Tetra Amelia syndrome is a congenital disorder, which is mainly caused by the presence of mutation in the WNT3 region. Being an embryonic developmental disorder, earlier warning of its onset can be predicted by subjecting there single nucleotide polymorphisms (SNPs) to further studies.Methods: For the identification of the list of mutant WNT3 proteins with the specified (G83X) position, we predicted it through reverse genetics method. This region was further used to determine the SNPs involved in them using the Chi-square test. Finally, we have validated the existence of these SNPs in the WNT3 gene by multifactor dimensionality reduction analysis.Results: In Tetra Amelia syndrome, we determined that among the six frames of WNT3 gene, only the 2nd frame has more identity with WNT3 protein (98%). The mutant amino acid residue was found only at the 83rd position (G83X). Sequence analysis techniques helped to determine 16 SNPs: rs147030694, rs9908452, rs1062339, rs193268056, rs190245126, rs185051815, rs71375364, rs188212517, rs185848450, rs151309556, rs148810526, rs142400306, rs118086135, rs77768380, rs75398055, and rs34608985. These SNPs where validated further and this lead to 3 SNP s, which can be used to genotype Tetra Amelia syndrome.Conclusion: The present studies of genotyping Tetra Amelia syndrome can help determine congenital disease at earlier stages itself. In future, larger dataset is needed and as well similar methodology can be used on late onset diseases (like Parkinson\u27s) can also be predicted by subjecting there SNPs genotype.Keywords: Tetra Amelia syndrome, WNT3, Hap map, Multifactor dimensionality reduction, Single, Nucleotide polymorphism
Chalcogenide-based van der Waals-layered materials for enhanced electronic and electromechanical properties
No full textIncludes bibliographical references.2020 Spring.Since the successful isolation of graphene via mechanical exfoliation at room temperature, other van der Waals (vdW)-layered or quasi-2D materials have gained significant interest in the scientific and technological communities. Quasi-2D (q2D) materials have been shown to unlock a wide variety of unusual and useful thermoelectric, electronic, optoelectronic, electromechanical, and sensing properties (among others) offering several advantages over conventional bulk 3D materials. From an application standpoint however, between the large band gap of hexagonal boron nitride and the zero band gap of graphene, the semiconductor space is mostly limited to Transition Metal Dichalcogenides (TMDCs) - which are semiconductors. There are several ways to improve the diversity of semiconducting 2D or q2D materials, which can lead not only to new materials, but to new phenomena and applications as well; these include alloying, doping, layering (heterostructuring), or discovering and manufacturing new 2D or q2D materials altogether. In the quest for new, versatile, and multi-functional q2D materials, this thesis presents computational studies based on vdW-corrected density functional theory addressing several directions of increasing the range of electronic and electromechanical properties of chalcogenide-based 2D or q2D materials. These studies pertain to group IV monochalcogenides, bilayer and bulk TMDC heterostructures, and surface-doped TMDCs, and have led, respectively, to (i) the discovery of 39 new and potentially synthesizable monochalcogenides, (ii) understanding the range of band gaps and piezoelectric coeffecients achievable in bilayer TMDCs and the effects of interlayer registry, and (iii) elucidating the physical origins of the p-type doping measured in molybdenum ditelluride in ambient ai
Дослідження польових транзисторів на вуглецевих нанотрубках з коаксіальною геометрією
No full textРобота спрямована на вивчення поведінки польового транзистора на вуглецевих нанотрубках
(CNTFET), який є одним з наноелектронних пристроїв та основною заміною комплементарних МОН
структур (CMOS) та MOSFET, які мають широкий спектр короткоканальних ефектів, що відіграють
помітну роль у їхніх недоліках і, таким чином, змусили нас шукати кращий пристрій. Одним з таких
пристроїв є CNTFET, який краще з точки зору виконання з низьким енергоспоживанням, більш високою швидкістю перемикання, високою мобільністю носіїв та дуже великими інтегральними схемами.
Канал такого транзистора складається з вуглецевої нанотрубки, і ця стаття в основному стосується
моделювання її вольт-амперних (I-V) характеристик. Ефективність цього пристрою в цілому залежить
від параметрів пристрою, які показані при моделюванні CNTFET, а геометрія пристрою має гарний
вплив на транспортування носіїв та дозволяє покращити електростатику, в той час як контакт затвора
охоплює весь канал вуглецевої нанотрубки. Вуглецева нанотрубка, що використовується для коаксіальної геометрії, має зигзагоподібну структуру і є напівпровідниковою за своєю природою. Для забезпечення ефективного виконання CNTFETs як життєво важливої частини наноелектронних пристроїв
важливу роль відіграють значення коефіцієнта хіральності (n, m), вплив яких показано на струм стоку. Далі перевіряються зміни рівня легування джерела/стоку, які впливають на струм стоку. Також
характеристики I-V досліджуються при різних температурних умовах, що побічно дає нам уявлення
про рух електронів в цьому пристрої при зміні температури. Крім того, аналіз проводився для того,
щоб побачити вплив довжини нанотрубки, напруги коаксіального затвора та товщини затвора на характеристики I-V, а також щоб виявити вплив high-k матеріалів на ці характеристики.This paper aims to study the behavior of a Carbon Nanotube Field Effect Transistor (CNTFET) which is one of the nanoelectronic devices and a major replacement for Complementary Metal Oxide Semiconductor (CMOS) and MOSFETs, which have a wide range of short channel effects that play a prominent role in their disadvantages and, thus, have made us today to look for a better device. One such device is CNTFET
which is better in terms of execution with low power consumption, faster switching speed, high carrier mobility, and very large scale integrated circuits. The channel of this transistor is surrounded by a carbon nanotube, and this paper mainly revolves around the simulation of its current-voltage (I-V) characteristics. The efficiency of this device on the whole depends on device parameters that are shown in the simulation of CNTFET, and the geometry of this device has an excellent dominance on carrier transport and permits for superior electrostatics while the gate contact wraps throughout the channel of a carbon nanotube. A carbon nanotube used for coaxial geometry has a zigzag structure and is semiconducting in nature. To ensure the efficient execution of CNTFETs as a vital part of nanoelectronic devices, chirality factor (n, m) values play an important role whose effect is shown on drain current. Further, the source/drain doping level variations that affect drain current are inspected. Also, I-V characteristics at different temperature conditions are examined which indirectly gives us an idea of the movement of electrons in this device with respect to change in temperature. Additionally, the analysis is also made to see the effect of nanotube length, coaxial gate voltage and gate thickness on I-V characteristics and also to reveal the impact of high-k materials on I-V characteristics
Analytical Hierarchy Process issues and mitigation strategy for large number of requirements
No full textNow-a-days most software projects have more candidate requirements. So it is vital for software companies to use different prioritization techniques to select valuable requirements among the candidate requirements. But software companies usually face a lot of challenges in using AHP such as increase in time and complexity with respect to number of comparisons. In this paper, we present previous work carried out in this research area and industrial study to identify the challenges software companies face while prioritizing large number of requirements using AHP. Different types of prioritization techniques have been developed to resolve these challenges. This paper focus on Numeral assignment technique which groups requirements into three categories: critical, standard and optional and AHP which prioritize requirements based on pair-wise comparisons. In this article we proposed a model i.e., NAcAHP where in which pair-wise comparison of AHP is applied on critical group of Numeral assignment technique for prioritizing the requirements. The result shows that the proposed model minimizes the time and complexity of pair wise comparison.</p
Secure Home Calling Bell
No full textThe Secure Home Calling Bell focuses on home security, a very beneficial IoT application that they are leveraging to develop a low-cost security system for residential and commercial applications. An ESP32 cam, ESP32 board, a flame sensor, and a PIR sensor are the components of the project. When a visitor approaches the door, the secure house project's initial phase sends the user a notification that reads, "Someone's At Your Door." An ESp32 camera that would be connected to a calling bell for surveillance whenever the user's notification was received makes up the project's next step. An additional component of the IoT project is a flame sensor-based fire alarm system
A Smart Parking System using Internet of Things with Automated Payment System for Smart Cities
No full text
