1,721,045 research outputs found
Erratic erase in flash memories - Part II: Dependence on operating conditions
No full textThis paper presents experimental results about the erratic erase phenomena occurring in Flash Memories with the aim of providing a deeper insight into the physical nature of the phenomenon and to deepen the comprehension of charge trapping/detrapping dynamics in tunnel oxides during Fowler-Nordheim erase. The results obtained under different operating conditions as Program/Erase cycling, Ultra Violet light exposure, thermal stress and the analysis of the erratic erase behavior varying the erasing conditions and the tunnel oxide thickness, suggested also possible methods that can be used in order to reduce the erratic erase phenomena
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields
No full textExperimental results show that the use of high electric fields during erasing of flash memories leads to a degradation of the reliability due to the increase of the erratic erase. The generation of new erratic bits during cycling has been related to the Anode Hole Injection phenomena
Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdown
No full text
Hot-Electrons and -Holes in MOSFETs Biased Below the Si-SiO2 Interfacial Barrier
No full textThis work presents an investigation of low-voltage hot carrier injection in submicrometer size MOSFET’s showing that for both electrons and holes it can take place even when the maximum energy to be gained by the applied field is less than the Si-SiO2 interfacial barrier height. In the case of electrons, it is also shown that the injection process, due to Auger recombination at low applied drain-to-source voltages (vds), is well described by the lucky-electron model (LEM) as soon as vds exceeds the threshold for this to become applicable. © 1985, IEE
A Probabilistic Fault Model for “Analog” Faults in Digital CMOS Circuits
No full textThis paper presents a probabilistic approach to the detection of analog faults (i.e., transistors stuck-on and bridgings) in CMOS circuits that depends on the conductances of faulty and fault-free networks. It is shown that unrealistic fault coverages can be obtained by simply assigning constant values to the conductances of transistors and bridgings and by comparing the resultant conductances of faulty and fault-free conflicting networks. To solve this problem, in this paper all conductances are considered as random variables with normal distribution. Conductance distributions of complex conflicting networks can be easily evaluated and the detection probability of each fault is determined. The expected coverage of analog faults is known at the end of a fault simulation. This result is shown to be more realistic than those obtained in a deterministic way. Fault coverages of analog faults obtained by means of a gate-level fault simulator are discussed for a complex FCMOS benchmark. © 1992, IEE
Analysis of Erratic Bits in FLASH Memories
No full textThis work presents experimental results concerning erratic behaviors in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injectio
Dealing with noise margins in high-speed voltage-mode signaling
No full textWe introduce noise-sensitive areas (NSAs) to represent noise margins for voltage-mode on-chip signaling. NSAs can be used to compute the maximum bit rate compatible with noise margins, and to compare the performance of different signaling schemes. We apply the proposed technique to receivers based on CMOS buffers and Schmitt triggers. ©2002 IEEE
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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