9 research outputs found
Allelopathic Effect of Sage and Turkish Oregano Volatile Oils on In Vitro in Sainfoin (Onobrychis viciifolia)
No full textSainfoin has little atention for plant tissue culture studies. However, genetic engineering applications of gene transfer can be done today. Therefore, first different methods are used in tissue culture (For example, using of different hormones for plant growing) and be given importance. In this study, the effect of different concentration (0-5-10-20-30 ppm) sage (Salvia officinalis L.) and Turkish oregano (Origanum onites L.) have profound effects on morphology of the tissues that grow from the initial sainfoin explant. The study was arranged in factorials with 6 replications and of variance was done using statistical analysis system (SAS) software. The data collected included the rate of seed germination, plant length, root number and root length. The highest seed germination, plant length and root length was obtained on sage volatile oil. Used both volatile oil reduced the germination ratio. Sage increased the plant and root length. Even so, Turkish orego significantly reduced plant length and is root number increased. © 2013 Copyright Har Krishan Bhalla & Sons
Molecular Characterization of Triticale Genotypes (X Triticosecale Wittmack) Based on ISSR-PCR
No full textWOS: 000453166600003In this study, genetic distance among 4 triticale cultivars cultivated in our country and 4 triticale lines was examined using the inter simple sequence repeat (ISSR-PCR) method and the 14 of used 16 primers gave polymorphic bands. The average polymorphism rate in the genotypes used in the study was determined as 42.27 %; in addition, in total, 97 bands and 41 polymorphic bands were obtained. Research results showed that the average number of bands per polymorphic primer and the number of polymorphic bands was 6.9 and 2.9, respectively and the similarity ratios between the genotypes used in this study were found to be between 44-89 %. According to the unweighted pair group method with arithmetic mean (UPGMA) analysis results, in terms of genetic similarity, Tacettinbey and Tatlicak 97 varieties were the most distant, but SDU-43 and Tacettinbey varieties were the closest among the genotypes. On the other hand, In terms of genetic variation, Karma 2000, Tacettinbey variety and SDU-43 line placed in the same group. In this study, establishing to be in attendance of a genetic variation evident and accord with the aim among triticale varieties registered in Turkey, it was understood that ISSR-PCR method was quite reliable and a beneficial technic in selecting of the appropriate methods and from this viewpoint in determining of genotypic the similarity / diversity in the breeding of the line to be the candidate variety
Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes
No full textGokcen, Muharrem/0000-0001-9063-3028;WOS: 000312660100014The voltage (V) and frequency (f) dependence of dielectric parameters such as the dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), real and imaginary parts of electrical modulus (M' and MaEuro(3)), and alternating-current (AC) electrical conductivity (sigma (AC)) of Au/PVA (cobalt-doped)/n-Si structures have been investigated by using experimental admittance measurements conducted at room temperature. The values of epsilon', epsilon aEuro(3), and tan delta were found to be strong functions of voltage and frequency, especially at low frequencies in the positive voltage region. It was observed that the values of epsilon' and epsilon aEuro(3) increase as the frequency decreases. The M' values increase with increasing frequency due to increasing dielectric relaxation, while MaEuro(3) values, in general, remain stable as frequency is changed. The sigma (AC) values at each bias voltage increase with increasing frequency.Duzce University Scientific Research ProjectDuzce University [2012.05.02.110]This work is supported by Duzce University Scientific Research Project (project no. 2012.05.02.110). Also, the author would like to thank Dr. Ibrahim Uslu (Department of Chemistry Education, Gazi University, Turkey), Dr. Tuncay Tunc (Department of Science Education, Aksaray University, Turkey), and Dr. Semsettin Altindal (Department of Physics, Gazi University, Turkey) for providing the material and its spinning
Synthesis, characterization and metal ion sensing properties of novel pyridone derivatives phthalocyanines
No full text#nofulltext# --- Ağar, Meltem (Arel Author), Altındal, Ahmet (Arel Author)The design of novel substituted phthalocyanines closely follows the requirement of their planned applications. In this study, synthesize of novel pyridone derivatives metal-free and symmetrical cobalt(II) phthalocyanines was carried out to improve brightness. For this purpose; starting with 4-nitrophthalonitrile and 4-hydroxy-6-methyl-3-nitro-2-pyridone, 4-(6-methyl-3-nitro-2-oxo1,2- dihydropyridin-4-yloxy) phthalonitrile was prepared. Then 2(3), 9(10), 16(17), 23(24)-tetrakis[6-methyl- 3-nitro-2-oxo-1,2-dihydropyridin-4-yloxy] metal-free phthalocyaninato and 2(3), 9(10), 16(17), 23(24)-tetrakis[6-methyl-3-nitro-2-oxo-1,2-dihydropyridin-4-yloxy] phthalocyaninato Co(II) were synthesized by using 4-(6-methyl-3-nitro-2-oxo-1,2-dihydropyridin-4-yloxy) phthalonitrile, lithium metal and cobalt(II) acetate tetrahydrate in amyl alcohol, respectively. The sensing behavior of the film of derivatives metal-free and symmetrical cobalt(II) phthalocyanines for the online detection of heavy metal ions in water samples was investigated by utilizing an AT-cut quartz crystal resonator. It was observed that the adsorption of the analytes on the coating surface cause a reversible negative frequency shift of the resonator. Quartz crystal microbalance (QCM) functionalized with phthalocyanine, derivatives metal-free and symmetrical cobalt(II) phthalocyanines, are demonstrated to be sensors for the detection of heavy metal ions like Cd2+, Zn2+, Cu2+, Cr2+ and Co2+. Thus, QCM based sensor arrays are considered a promising platform for the direct analysis of aqueous samples
Improvement of electric and photoelectric properties of the Al/n-ZnO/p-Si/Al photodiodes by green synthesis method using chamomille flower extract
No full textIn this study, zinc oxide nanoparticles (ZnO-NPs) were synthesized by green and chemically using the sol–gel method. They compared in terms of current–voltage (I–V) characteristics. The synthesized plant-based (ZnO-NPs) were characterized via Fourier-transform infrared-spectroscopy, X-ray diffraction (XRD), and field-emission scanning electron microscopy. The XRD analysis determined the existence of pure-crystalline of (ZnO-NPs). Particle size distribution was routinely employed to characterize the green synthesized powders for size distribution, and the reactivity of green synthesized particles was found smaller than chemically synthesized particles. The I–V measurements of prepared thin films characteristics were compared both in the dark and ultraviolet spectrum (365 nm) under 100 mW/cm2. While the reverse-saturation current (I0), ideality factor (n), and zero-bias barrier-height (?bo) values were extracted from the I–V data as 1.68 × 10–6 A, 2.43, 0.61 eV in dark and 7.27 × 10–5 A, 5.64, 0.50 eV under illumination for Al/(Bio-ZnO)/pSi and 7.99 × 10–6 A, 3.75, 0.57 eV in dark and 3.09 × 10–5 A, 5.71, 0.53 eV under illumination for Al/(Chemical-ZnO)/pSi photodiodes. These photodiodes' energy-dependent profiles were also obtained using the Card-Rhoderick method. © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.048–2021This study was funded by Sakarya University of Applied Sciences Scientific Research Project (Project number: 048–2021)
Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions
No full textAu/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic electrical parameters (i.e. saturation current (I-o), ideality factor (n), barrier height (Phi(Bo)), series (R-s) and shunt resistances (R-sh) both under dark and illuminated conditions (50-200 W), at room temperature. Using different calculation methods (i.e. thermionic emission (TE) model, Ohm's Law and Norde's method), these parameters were obtained from the current -voltage (I -V) data and compared with each other in various conditions. In our research, it is clear that there are a decrease in R-s value and an increase in R-sh value for Gr-doped PVA in comparison with the pure PVA structure under dark and illuminated conditions, therefore rectifier rate (RR = I-F/I-R), is the proof of the quality for diodes, significantly improved. Also, the Phi(Bo) values with interlayer (pure and Gr-doped PVA) are lower than without. Consequently, these results indicate that the PVA (pure and Gr-doped) changed effectively the BH according to other structure and, moreover, Gr-doped PVA layer significantly improved the quality of Au/PVA/n-GaAs structure under dark and illuminated conditions. (C) 2016 Elsevier Ltd. All rights reserved.Karabuk University Scientific Research Project (KBUBAP) [KBU-BAP-14/2-DR-005]We thank ikram Orak, PhD, Vocational School of Health Services, Bingol University, for his support during our study. This study was supported by Karabuk University Scientific Research Project (KBUBAP) [project numbers KBU-BAP-14/2-DR-005]. Each author wishes to thank KBUBAP for contributions
Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer
No full textTaşçıoğlu, İlke (Arel Author)Current-conduction/transport mechanisms (CCMs or CTMs) through barrier and barrier height (BH) formation in the Al/(CdZnO)/p-Si/Al diodes, which were prepared by the sol-gel method, were examined in the range of 110-380 K. The decrease of zero-bias BH (Phi(Bo)) and increase of ideality factor (n) with decreasing temperature were observed. The classic Richardson plot indicated two distinct linear regions that correspond to low and high temperature range (LTR and HTR), respectively. Contrary to this, the acquired Richardson constant value (A*) was much lower than its theoretical value (32 A cm(-2) K-2). Such abnormal behavior of the Phi(Bo), n and A* was attributed to the evidence of the barrier inhomogeneities, especially at low temperature. Therefore, the Phi(Bo-)n, Phi(Bo) and (n(-1) - n) versus q/2kT plots were sketched to acquire significant clues for the Gaussian distribution (GD) of the BHs at rectifier contact area with the mean BH ((Phi) over bar (Bo)) and standard deviation (sigma(so)), which also have two linear parts with distinct slopes. (Phi) over bar and sigma(so) were calculated from the slope and intercept of Phi(Bo) versus q/2kT plot as 0.802 eV and 0.066 V for LTR, 1.043 eV and 0.106 V for HTR, respectively. The (Phi) over bar (Bo) and A* were acquired by utilizing the sigma(so) values and using the Richardson plot as 0.626 eV and 14.26 A cm(-2) K-2 for LTR and 1.021 eV and 32.53 A cm(-2) K-2 for HTR, respectively. Thus, the I-V-T characteristics of the Al/(CdZnO)/p-Si/Al diodes at forward biases were successfully elucidated by the double-GD of BHs with mean BHs of 0.626 eV and 1.021 eV, respectively
Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method
No full textTaşçıoğlu, İlke (Arel Author)HgS-PVA nanoparticles were obtained via a simple ultrasound-assisted method. The structural and morphological characteristics of the products were analyzed by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical properties were also analyzed by UV-Vis spectroscopy, and Fourier transform infrared (FTIR). The XRD pattern demonstrated that the samples were high purity and no impurity other peaks were detected. The optical band gap was calculated by Tauc plot measured as 2.4 eV and a blue shift of about 0.3 eV due to the quantum confinement of charge carriers in a small nanostructure was observed. The surface of the samples consisting of nano-sized particles and the energy between the functional group were proved by SEM measurement and FTIR analysis techniques, respectively. Dielectric behavior was examined in the frequency range of 1 kHz-5MHz by using admittance (C-V and G/omega-V) measurements. The effect of surface states (N-ss) and polarization processes are dominant especially at low frequencies which lead to large discrepancies in C and G values. The dielectric constant value epsilon' reduces with the frequency increments, whereas the ac electrical conductivity sigma(ac) increases, depending on the nature of reducing polarization and series resistance (R-s) effect. The epsilon ''-V and tan delta-V plots give a peak in the inversion region and the magnitude of this peak reduces with the frequency increments, shifting towards the accumulation region that can be ascribed to a frequency dependent dielectric relaxation
Turkey's relationship with the United States 1960-1975.
No full textSIGLEAvailable from British Library Document Supply Centre-DSC:DX189187 / BLDSC - British Library Document Supply CentreGBUnited Kingdo
