6 research outputs found
Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench
No full textMultidimensional device structures can improve the typical performance trade-off of semiconductor power transistors. In this paper, the on-state, reverse, and short-circuit performance of a SiC quasi-planar trench MOSFET are compared to those of a classical planar device through advanced 3-D TCAD simulations
TCAD device modelling and simulation of wide bandgap power semiconductors
No full textTechnology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide band gap power semiconductors. In particular, modelling and simulating 3C- and 4H- Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analysed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed. Keywords: TCAD, modelling and simulation, Silicon Carbide, Gallium Nitride, Diamond, Physics modelling, material parameters. <br/
On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures
No full textThis work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.</p
Performance improvement of >10kV SiC IGBTs with retrograde p-well
No full textA p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1µm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs
Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes
No full text3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time
