196,232 research outputs found
Electrical Characterization at a Nanometer Scale of Weak Spots in Irradiated SiO2 Gate Oxides
No full textIn this work, the electrical conduction of irradiated thin SiO2 gate oxides of MOS structures has been analyzed at a nanometer scale with a Conductive Atomic Force Microscope (C-AFM). The results have been compared to those obtained on fresh and electrically stressed oxides, demonstrating the capability of the technique to evaluate the electrical damage induced during irradiation
Peculiar characteristics of nanocrystal memory cells programming window
No full textIn this work the authors study nanocrystal memory cells, focusing on a peculiar characteristic of these devices: the programming window measured in subthreshold region is larger than that measured in linear region. For converse, floating gate flash memory cells with a similar structure feature the same programming window in linear and subthreshold regions. To understand the cause of the difference observed in the nanocrystal memory cells, the authors perform two dimensional technology computer aided design simulations. They well reproduce the experimental results, indicating that the difference observed in nanocrystal memories is due to the localization of the charge into specific regions of the oxide above the channel, i.e., the nanocrystals. On the other hand, when the charge is uniformly stored in the oxide above the channel (as in the case of floating gate flash memory cells), this difference disappears
Effects of the Localization of the Charge in Nanocrystal Memory Cells
No full textIn this paper, we present a peculiar characteristic of nanocrystal (NC) memory (NCM) cells: The programming (P) windows measured in linear and subthreshold regions are different. A floating-gate Flash memory cell with a similar structure does not show the same behavior, and the P window (PW) is independent of the current level of the extrapolation, as expected. By performing 2-D TCAD simulations, we demonstrated that this characteristic of NCM cells is due to the localization of the charge into the NCs. We investigate the correlation between the difference of the PWs in linear and subthreshold regions and the number, width, and position of the NCs
Leaky spots in irradiated SiO2 gate oxides observed with C-AFM
No full textA conductive atomic force microscope (C-AFM) has been used to perform a nanometer scale characterization of the electrical properties of irradiated thin SiO2 gate oxides of MOS devices. The results have been compared to those obtained on fresh (without irradiation) and electrically stressed oxides. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Their I-V characteristics have been registered with the C-AFM. The results show that they have a leaky behaviour, which has been associated to the radiation induced leakage current (RILC)
Dr. Duane M. Jackson, Morehouse College, July 2011
No full textThis video is a conversation with Dr. Duane M. Jackson. Dr. Jackson talks about his paper, "Recall and the Serial Position Effect: The Role of Primacy and Recency on Accounting Students' Performance." Jackie Daniel, AUC Woodruff Library, is the interviewer
"Reflections on the subject of Emigration from Europe with a view to Settlement in the United States" By M. Carey.
No full text"Reflections on the subject of Emigration from Europe with a view to Settlement in the United States: containing bried sketches of the moral and political character of those states.
By M. Carey, member of the American philosophical, and of the American Antiquarian Society, and author of The Olive Branch, Cindiciae Hibernicae, essays on banking, on political economy, and on internal improvement.
To which are now added the English editor's comments on the subject; together with Important Advice to Emigrants, and Cautions Against Impositions Practiced in the Outports
Dispelling the Myths Behind First-author Citation Counts
No full textWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
Dr. Glendon Swarthout
No full textHosted by Roger M. Busfield, MSU Assistant Professor of Speech and Theater, Meet the Author is designed to introduce a general audience to a contemporary author and their work through in-depth interviews. This episode features a conversation between Dr. Glendon Swarthout, prolific author and English professor at MSU, and assistant professors Sam S. Baskett and Theodore B. Strandness
Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale
No full textIn this work, a conductive atomic force microscope (C-AFM), a scanning capacitance microscope (SCM), and a kelvin probe force microscope (KPFM) have been used to qualitatively study at the nanoscale the electrical properties of irradiated and implanted gate oxides of metal-oxide-semiconductor structures. These techniques have allowed to investigate the electrical conduction (C-AFM) and the presence of charge (SCM and KPFM) in the oxide of the analyzed structures. The impact of the energy of the impinging ions has also been qualitatively evaluated
Gate dielectric degradation in CMOS inverters
No full textTo study the gate oxide degradation under stress conditions closer to the actual operation of devices in circuits, in this work, CMOS inverters have been stressed using DC and pulsed signals at the input. Uniform and non-uniform Fowler-Nordheim and Channel Hot Carrier stresses have been identified as those governing the oxide degradation, depending on the input signal, and modifying the electrical response of the device. In particular, a decrease of the saturation current is observed, which depends on the transistor type (NMOS or PMOS), input signal, and stress time. The results show larger degradations in the NMOS when the input frequency is increased, which has been attributed to the Channel Hot Carriers contribution during the output state transitions in the inverter. Also the impact of the different stresses on the circuit Output is analyzed and related to the degradation of the devices. A shift in the inverter voltage transfer characteristic has been observed. whose direction depends on the degradation that the transistors have suffered, being more important at elevated frequencies
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