3 research outputs found
Preparation and characterization of copper (I) iodide thin films prepared by spin coating method at different molarities of solution / Muhammad ' Atiq Azman
No full textThis work will show the effect of using different moralities of solution on Cul thin films. The material that used in preparing thin film is Cul that have been synthesized using chemical vapor deposition method. The method used to deposit the solution onto the glass substrate for preparing thin film was spin coating technique. The purpose using glass substrate is for characterization the physical, electrical and optical properties. It was characterized by using Atomic Force Microscopy (AFM), UV-Vis-NIR measurement and two point probe I-V measurement. For physical properties, the nanostructure Cul thin films can be seen through AFM measurement. The value of transmittance, absorption coefficient and optical was concentrated on characterization the optical properties. Next for electrical properties, the main purpose is to study on its resistivity and conductivity
Effect of the Precursor Solution Concentration of CuI Thin Film Deposited by Spin Coating Method
No full textIn this research, the effect of precursor concentration of CuI thin film deposited by spin coating method was studied. The wide band gap p-type semiconductor CuI thin film was prepared by mixing the CuI powder with 50 ml of acetonitrile as a solvent. The CuI concentration varies from 0.05M to 0.5M. The speed for spin coating is 1000 rpm for 60 seconds. After the deposition the CuI thin films were annealed at 150°C. The result shows the CuI thin film properties strongly depends on its precursor concentration. Thickness between 33.65 nm - 441.25 nm was obtained as the concentration increased. The increment of thickness affected the electrical property with resistivity of about 10-6 Ω.cm and 101 Ω.cm was observed for all the CuI thin films. For optical properties, the transmittance decreased with high concentration as high amount of CuI particle were observed in the thin films. From the transmittance, the absorption coefficient of 10-6 m-1 and optical band gap of 3.10 and 3.50 eV for all the films were observed using Tauc’s plot.</jats:p
Comparison on the Electrical, Structural and Optical Properties of CuI Thin Films Deposited by Spin Coating and by Atomization Method
No full textIn this study, a novel approach of using two different methods was investigated to prepare the CuI thin films. The CuI thin films in this research were prepared by spin coating method and by mister atomizer. Both methods used CuI powder as a precursor and acetonitrile as a solvent. The thickness of CuI films in this research range from nm – um thickness depending on the deposition technique. The 2 point probe I-V measurement was used to measure the electrical properties. The resistivity of about 106 Ω cm-101 Ω cm was observed with CuI thin films using spin coating technique. Then, the surface morphology shows all the films exhibit a microsturucture CuI particles in a case of mister atomizer method. For optical measurement, the ultraviolet-visible- near infrared (UV-VIS-NIR) measurement (Perkin Elmer Lambda 750) was used. The optical band gap of about ±3.1 eV and ±2.9 eV were observed in those CuI films. These properties of different technique are applicable for application in electronic devices such as in solar cells.</jats:p
