4,756 research outputs found
Recent Developments and Future Directions in Flow Visualization: Experiments and Techniques
No full textFlow visualization has long been a critical tool for understanding complex fluid dynamics in both natural and engineered systems [...
sj-tif-1-cll-10.1177_09636897221081479 – Supplemental material for Evaluating the Effect of Circ-Sirt1 on the Expression of SIRT1 and Its Role in Pathology of Pulmonary Hypertension
No full textSupplemental material, sj-tif-1-cll-10.1177_09636897221081479 for Evaluating the Effect of Circ-Sirt1 on the Expression of SIRT1 and Its Role in Pathology of Pulmonary Hypertension by Wenjie Diao, Ge Liu, Chao Shi, Yiyao Jiang, Haihui Li, Jinjin Meng, Yu Shi, Mingming Chang and Xuegang Liu in Cell Transplantation</p
sj-docx-2-cll-10.1177_09636897221081479 – Supplemental material for Evaluating the Effect of Circ-Sirt1 on the Expression of SIRT1 and Its Role in Pathology of Pulmonary Hypertension
No full textSupplemental material, sj-docx-2-cll-10.1177_09636897221081479 for Evaluating the Effect of Circ-Sirt1 on the Expression of SIRT1 and Its Role in Pathology of Pulmonary Hypertension by Wenjie Diao, Ge Liu, Chao Shi, Yiyao Jiang, Haihui Li, Jinjin Meng, Yu Shi, Mingming Chang and Xuegang Liu in Cell Transplantation</p
Ge1-ySny (y=0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties
No full textabstract: Novel hydride chemistries are employed to deposit light-emitting Ge [subscript 1- y] Sn [subscript y] alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ≤ 0.06, the CVD precursors used were digermane Ge [subscript 2]H[subscript 6] and deuterated stannane SnD[subscript 4]. For y ≥ 0.06, the Ge precursor was changed to trigermane Ge [subscript 3]H[subscript 8], whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge [subscript 4]H[subscript 10] as the Ge source. The photoluminescence intensity from Ge [subscript 1− y] Sn [subscript y] /Ge films is expected to increase relative to Ge [subscript 1− y] Sn [subscript y] /Si due to the less defected interface with the virtual substrate. However, while Ge [subscript 1− y] Sn [subscript y] /Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge [subscript 1− y] Sn [subscript y] /Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge [subscript 1− y] Sn [subscript y] /Ge makes it possible to approach film thicknesses of about 1 μm, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge [subscript 1− y] Sn [subscript y] /Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si[subscript 1− x] Ge [subscript x] /Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 13 (2014) and may be found at http://dx.doi.org/10.1063/1.489678
Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications
No full textabstract: The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10[superscript −5] A/cm[superscript 2] at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (Dit ) is estimated to be as low as ∼2 × 10[superscript 12] cm[superscript −2] eV[superscript −1] under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased Dit value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in JOURNAL OF APPLIED PHYSICS 117, 5 (2015) and may be found at http://dx.doi.org/10.1063/1.490695
OB00040 - Damodarpur Copper Plate 1 (GE 163) of Budhagupta
No full textDamodarpur Copper Plate 1 (GE 163) of Budhagupt
Flow Visualization
No full text"Flow Visualization: Experiments and Techniques", compiles cutting-edge research and innovative methodologies that address the challenges of analyzing fluid dynamics in industrial and scientific contexts. Tailored for researchers, engineers, and graduate students in fluid mechanics and related disciplines, this work emphasizes practical advancements in spatial resolution, dynamic range, and predictive modeling. Contributions from leading experts provide insights into data assimilation, emerging visualization tools, and interdisciplinary collaboration.This Reprint is not just a compilation of research—it is a roadmap for the future of fluid-flow studies. It brings together latest research from leading experts in the field, ensuring readers are exposed to the most up-to-date knowledge and techniques. Flow visualization is vital for aircraft design for those in the aerospace industry. Understanding how air flows around an aircraft's wings and fuselage can lead to more fuel-efficient designs and enhanced flight performance. In the biomedical field, visualizing blood flow in the human body helps in the diagnosis and treatment of various cardiovascular diseases.Whether you are looking to expand your research horizons, enhance your engineering skills, or simply gain a deeper understanding of the fascinating world of fluid dynamics, this reprint is the perfect companion in the ever-evolving field of fluid flow visualization
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