451 research outputs found

    DEUTSCHE AFRIKA KORPS: Peranan Field Marshal Erwin Rommel dalam Perang Dunia II di Afrika Utara 1941-1943

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    Latar belakang penelitian ini dikarenakan ketertarikan penulis akan suasana Perang Dunia II di Afrika Utara yang mempunyai ciri khas tersendiri dibanding pertempuran lainnya yang terjadi selama Perang Dunia II berlangsung. Masalah utama yang dibahas dalam skripsi ini adalah ‘bagaimana peranan Field Marshal Erwin Rommel dalam Perang Dunia II di Afrika Utara?’. Masalah utama ini kemudian dijabarkan kedalam beberapa pernyataan penelitian, yakni (1) bagaimana latar belakang keterlibatan Jerman dalam pertempuran di Afrika Utara 1941-1943?, (2) apa yang melatarbelakangi Jerman menunjuk Field Marshal Erwin Rommel untuk memimpin Deutsche Afrika Korps?, (3) bagaimana proses pertempuran yang dipimpin Field Marshal Erwin Rommel di Afrika Utara 1941-943?, (4) Bagaimana akhir dari pertempuran Jerman pada Perang Dunia II di Afrika Utara 1941-1943? Metode yang digunakan adalah metode historis meliputi pengumpulan sumber, kritik sumber, interpretasi dan historiografi. Untuk memperdalam analisis, peneliti menggunakan pendekatan interdisipliner melalui kajian ilmu sosiologi, militer dan politik dengan menggunakan konsep-konsep seperti peran, status, perang, serta menggunakan teori konflik Lewis A. Coser dan teori geopolitik Karl Haushoffer. Deutsche Afrika Korps dibentuk akibat keterlibatan Jerman dalam pertempuran di Afrika Utara. Keterlibatan Jerman di Afrika Utara disebabkan karena Afrika Utara memiliki arti penting bagi Jerman karena memiliki Terusan Suez dan benteng Gibraltar. Selain itu hubungan Italia-Jerman yang merupakan blok Poros akibat perjanjian Pakta Baja dan Pakta Tripartit membuat Jerman harus terlibat dalam pertempuran. Deutsche Afrika Korps ini dipimpin oleh Field Marshal Erwin Rommel yang dipercayai oleh Hitler karena kepimpinannya dan kepopulerannya dikalangan pasukan Jerman. Rommel memiliki peranan yang sangat penting ketika Jerman membantu Italia di Afrika Utara. Taktik dan strategi Rommel yang jenius membuat Sekutu kewalahan. Strategi yang digunakan diantaranya membuat tank dari kayu untuk mengelabui musuh dan juga memposisikan Flak 88mm dalam bentuk U untuk menjebak tank musuh dalam jebakannya. Proses pertempuran di Afrika Utara ini diawali ketika Rommel mendarat di Tripoli dengan langsung melakukan ofensif mendesak Sekutu menuju perbatasan Libya-Mesir. Selain itu juga Rommel mendapatkan perlawanan dari Sekutu yang melakukan beberapa operasi yang bertujuan untuk memukul mundur Jerman dari Afrika Utara. Operasi tersebut diantaranya operasi Brevity, operasi Battleaxe dan operasi Crusader. Perlawanan Rommel berakhir ketika kekalahan Jerman di El Alamein yang disebabkan faktor kurangnya logistik dan ketidakseimbangan kuantitas pasukan yang dimiliki antara Poros dan Sekutu di El Alamein. Kekalahan Jerman di El Alamein merupakan salah satu turning point bagi Sekutu dalam Perang Dunia II ini dan mengubah arah berlangsungnya perang kedepannya. The reason of research because author interested with World War II situation in Northern Africa that have characterized be compared another war in World War II. The main problem to discuss in this research is “ How Field Marshal Erwin Rommel role in the World War II in Northern Africa?”. The main problem divided into four research questions, (1) what the purpose Germany includes in battle of Northern Africa 1941-1943?, (2) what the reason Germany choose Field Marshal Erwin Rommel to led Deutsche Afrika Korps?, (3) what is the process that led Field Marshal Erwin Rommel in Northern Africa 1941-1943?, (4) how to end the Germany battle in the World War II in Northern Afrika 1941-1943?. The research uses historic methodology involved Heuristics, source criticism, interpretation, and historiography. To deepen the analysis, researcher uses interdisciplinary approach through the study sociology, military, and politics with concept and theory like role, status, war, conflict theory from Lewis A. Coser, and geopolitical theory from Karl Haushoffer. Deutsche Afrika Korps formed as result of Germany includes in Battle of Northern Africa. Germany involvement in Northern Africa due to Northern Africa has significance for Germany because have Suez Canal and Fort Gibraltar. In addtion, the relation between Germany and Italy who where Axis due to Agreement Steel Pact and Tripartit Pact makes Germany must includes in the battle. Deutsche Afrika Korps is led by Field Marshal Erwin Rommel and believed Hitler because leadership and popularity among the Germany Troops. Rommel has a very important role when Germany helped Italy in Northern Africa. Tactics and strategy genius Rommel make allied overwhelmed. The strategy used them made of wood tanks to trick enemy and Flak 88m in form U to trap enemy tanks. The process battle in Northern Africa begins when Rommel landed in Tripoli and makes offensive to push Allied towards Libya-Egypt border. It also Rommel get resistance from Allied who perform several operations aimed at repelling Germany of Northern Africa. Such operations include Brevity Operation, Battleaxe Operation, and Crusader Operation. Rommel resistance ended when Germany defeat in El Alamein due to lack of logistical factors and troops possessed imbalance quantity between Axis and Allied. The defeat of Germany in El Alamein is one of turning point for Allied in World War and changing the direction of war in the future

    “Honorable men”: Robert E. Lee, Erwin Rommel, and the Memory and Forgetting of Defeat and Guilt

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    In October 2017, White House Chief of Staff John F. Kelly criticized those who wanted to bring down statues of Confederate General Robert E. Lee, defending him as “an honorable man.” Geraldo Rivera also took part in the heated debate about Confederate monuments: “#RobertELee is a lot like #ErwinRommel a glorious yet failed warrior, untarnished by the sins of his brothers.” With his tweet the Fox News commentator and former talk show host responded to a Twitter post by the economist and columnist Paul Krugman who had asked: “On statues of Robert E. Lee: what would we think if German towns put up statues of Erwin Rommel, also a good general serving a vile cause?” This article looks at the larger debate about the Lost Cause and the history and memory of slavery and the Civil War in a case study focusing on Robert E. Lee, trying to raise some larger questions of memory and forgetting through a comparison with Erwin Rommel. The article analyzes the special places Southern General Robert E. Lee and Feldmarschall Erwin Rommel have occupied in the memories of the American Civil War and World War II, respectively. It will argue that to find something honorable in all the evil of lost wars that were fought for the wrong ends can be regarded as an individual and collective way to deal with pain, guilt, and defeat. Part of this is honoring the soldiers and their sacrifices, focus on famous battles, and celebrate distinguished generals while ignoring and “forgetting” what the real goals of these wars had been. Today, both Rommel and Lee have been pushed off their pedestals, in the case of Lee statues even literally. But the fact that Lee and Rommel have been glorified as honorable, loyal, and patriotic military men also by those who were their opponents/enemies makes this comparison even more interesting, because it cannot be explained by a collective amnesia in order to suppress and forget guilt and crimes. In connection with remembering, the author argues, it is also important to take a closer look at the different functions of “forgetting” that have been described by Aleida Assmann and other scholars, especially at what Assmann calls “complicit” and “constructive” forms of forgetting. Both examples show that these types of forgetting protected perpetrators, helped shape a selective historical narrative, and were also important in new beginnings and reconstruction after a catastrophic defeat

    Pseudomonas aeruginosa Type IV pilus and resistance to the antimicrobial properties of surfactant protein-A

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    The lung contains numerous innate immune cells and effector proteins. One important component of this immune system is the surfactant protein-A (SP-A), which facilitates microbial clearance by opsonization and membrane permeabilization. Pseudomonas aeruginosa (PA) is a major Gram-negative bacterial pathogen commonly associated with chronic lung infection in cystic fibrosis. In order to resist the antibacterial effects of SP-A, PA expresses various structural and secreted virulence factors. Previously, Wu et al (2003) have shown that Escherichia coli lipopolysaccharides (LPS) are important in resisting SP-A-mediated membrane permeabilization. Zhang et al (2005) performed a comparative signature-tagged mutagenesis screen to identify PA virulence factors needed to resist SP-A-mediated lung clearance, and identified PchA (isochorismate synthase) and PtsP (phosphoenolpyruvate protein phosphotransferase) as important for resisting SP-A-mediated membrane permeability. Zhang et al (2007) further showed that PA flagellum is important for resisting SP-A-mediated membrane permeabilization. Finally, Kuang et al (2011) have shown PA elastase degrades SP-A, allowing an avenue for PA to escape SP-A-mediated opsonization and membrane permeabilization. In this study, we demonstrated that type IV pilus (Tfp) is important in the resistance of lung clearance both in the presence and absence of SP-A. The Tfp-deficient mutant, ΔpilA, is severely attenuated in an acute pneumonia model of infection in the lungs of wild-type mice that it allows similar bacterial load as PAO1 in the lungs of SP-A-/- mice. The ΔpilA bacteria are more susceptible to SP-A-mediated aggregation and opsonization. In addition, the integrity of the outer membranes of ΔpilA bacteria is compromised, rendering them more susceptible to SP-A-mediated membrane permeabilization. By using Tfp extension and retraction mutants, we demonstrate that the increased susceptibility of ΔpilA to SP-A-mediated opsonization is caused by the total absence of Tfp from PA cells. Finally, we provide evidence that increased expression of an 18 kDa nonpilus adhesin OprH in ΔpilA, may explain why there is an increased susceptibility to SP-A-mediated phagocytosis. In addition, we also have shown that Tfp glycosylation with O-antigen subunits allows for increased resistance to SP-A. We have also shown the glycosyltransferase mutant, 1244G7, which is deficient in O-antigen, is more susceptible to SP-A-mediated lung clearance and phagocytosis, but not membrane permeability. Finally, we have shown that the increase susceptibility of 1244G7 is associated with exposure of putative mannose residues.Item withdrawn by Mark Zulauf ([email protected]) on 2013-09-23T20:00:12Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Rommel Tan PhD Thesis Dissertation.docx: 5359511 bytes, checksum: cedbfd036610c20ff942637fde162bad (MD5) Rommel Tan PhD Thesis Dissertation.pdf: 1622691 bytes, checksum: d866a4a590e3d005b81d113f80a32d5a (MD5)Made available in DSpace on 2014-01-16T18:25:08Z (GMT). No. of bitstreams: 3 Rommel Max_Tan.pdf: 1622969 bytes, checksum: 2884de0619c5ad0978bcb1c427d056a3 (MD5) Rommel Tan PhD Thesis Dissertation.docx: 5360751 bytes, checksum: 48a75a50d7ae7af80847280f9d16f748 (MD5) license.txt: 4061 bytes, checksum: 8301f21d5033576203961985671fb787 (MD5)Restriction data tranferred 2014-07-01T11:36:42-05:00 Original Data Group with Access Administrator Release Date: 2016-01-16 12:27:27 UTC Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemItem marked as restricted to the 'Administrator' Group (id=1) by Seth Robbins ([email protected]) on 2014-01-16T18:27:29Z Item is restricted until 2016-01-16T18:27:27ZLimited Restriction Lifted for Item 46901 on 2016-01-16T11:02:18Z

    Photostrom-Spektroskopie von Silicium im Volumen und an der Grenzfläche zu Siliciumdioxid

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    The subject of this thesis is the detailed investigation of injection level dependent photocurrent measurements. By using the conventional Elymat method the injection level dependence of carrier lifetimes for iron contaminated boron doped silicon samples was determined experimentally and verified by 2D simulations. Obtained results are of fundamental importance for the injection level dependent characterization of insulator/silicon structures with a modified Elymat method which was also carried out. Sufficient passivation of the semiconductor surface is crucial for the correct determination of low level injection lifetimes. In this context it could be shown that the efficiency of the surface passivation with diluted hydrofluoric acid as it is used in the conventional Elymat method is not sufficient. However, the use of electrostatic passivation with the modified Elymat method allows a correct lifetime determination for all injection levels. At low injection this passivation can be applied even with natural oxide as insulator. Lifetime spectroscopy for iron contaminated silicon samples was conducted for samples with different doping and iron concentrations. The contamination with iron was performed using either the spin-on technique or ion implantation, both followed by a thermal drive-in process. A very good agreement between experimental and simulated lifetimes could be achieved. For the first time both Elymat measurement modes could be consistently characterized. In particular, the increase of the effective lifetime with increasing laser power - which is observed when extracting the photo induced diffusion current at the laser facing surface - could be attributed to an increasing drift current. The capture coefficients of the relevant iron energy levels were not fitted but independently determined using previously published lifetime data. Both, published lifetime data and the measured lifetimes of this work could be modeled accurately with the obtained set of capture coefficients when both energy levels of the iron boron pair and the energy level of interstitial iron are accounted for. For samples exclusively contaminated with iron the Elymat method with electrostatic passivation can be used for a precise determination of the iron concentration. Furthermore it is demonstrated for the first time that the modified Elymat method enables the quantitative determination of interface state density D_it and insulator volume charge Q_Is of insulator/silicon structures. The required evaluation procedures are based on a physical model for charge carrier recombination at interface states of illuminated electrolyte/insulator/silicon structures which has been developed within this work. Using this model, the dependence of the photo induced diffusion current on the interface recombination as it is measured with the modified Elymat method can be simulated with very good agreement for the whole investigated injection regime. This has been shown for a lot of thermally oxidized silicon samples with various oxide thicknesses or post oxidation treatments. By means of these results optimized measurement conditions for the modified Elymat method could be defined. The sensitivity of the modified Elymat method for the determination of interface state density could be estimated to be in the range of about 1-5*10^9 cm^-2eV^-1 for samples with high carrier lifetimes. Values of D_it and Q_Is as determined with the modified Elymat method are in very good agreement with values as obtained with established measurement methods (i.e., conductance method and capacitance voltage method, respectively) using comparable samples. To enable quantitative determination of D_it and Q_Is values for the parameters of the physical modeling have to be known. These values could be either obtained or verified experimentally. Consequently in this work it could be shown that the modified Elymat method is very well suited for the accurate and fast control of oxidation processes.Die vorliegende Arbeit befasst sich mit umfassenden Untersuchungen zur Injektionsabhängigkeit von Photostrom-Messungen. Mit dem konventionellen Elymat-Verfahren wurde die Injektionsabhängigkeit der Ladungsträgerlebensdauer von Eisen-kontaminierten bordotierten Siliciumproben experimentell ermittelt und durch zweidimensionale Simulationen verifiziert. Die dabei gewonnenen Ergebnisse sind von grundlegender Bedeutung für die ebenfalls erfolgte injektionsabhängige Charakterisierung von Isolator/Silicium-Strukturen mit einem modifizierten Elymat-Verfahren. Entscheidend für die korrekte Messung von Niederinjektionslebensdauern ist eine ausreichende Passivierung der Halbleiteroberfläche. Es konnte gezeigt werden, dass die beim konventionellen Elymat-Verfahren verwendete Oberflächenpassivierung durch 1%ige Flusssäure nicht effektiv genug ist, während die Lebensdauern mit Hilfe der elektrostatischen Passivierung des modifizierten Elymat-Verfahrens im gesamten Injektionsbereich sehr genau bestimmt werden können. Gerade bei niedriger Injektion kann dieser Effekt selbst mit natürlichem Oxid als Isolator genutzt werden. Die Lebensdauerspektroskopie an Eisen-kontaminierten Siliciumproben mit dem Elymat-Verfahren ist an Proben mit unterschiedlicher Dotierungs- und Eisenkonzentration untersucht worden, wobei die Eisenkontamination gezielt entweder mittels “spin-on”-Verfahren oder Ionen-Implantation und einem nachfolgenden Diffusionsschritt erfolgte. Die Modellierung der Messergebnisse ergab eine sehr gute Übereinstimmung zwischen Experiment und Simulation. Erstmals konnten dabei beide Elymat-Messmodi konsistent charakterisiert werden. Speziell konnte der Anstieg der effektiven Lebensdauern mit steigender Laserleistung bei Extraktion des photoinduzierten Diffusionsstroms auf der dem Laser zugewandten Scheibenoberfläche auf einen zunehmenden Driftstromanteil zurückgeführt werden. Die Einfangkoeffizienten der bei Eisenkontamination existierenden relevanten Energieniveaus wurden dabei nicht angepasst sondern unabhängig an Hand von in der Literatur veröffentlichten Messdaten ermittelt. Bei Berücksichtigung beider Zustände des Eisen-Bor-Paares und des Energieniveaus von interstitiellem Eisen können alle in der Literatur veröffentlichten und die hier gewonnenen Ergebnisse mit dem ermittelten Koeffizientensatz korrekt modelliert werden. Bei ausschließlicher Kontamination mit Eisen kann daher die Eisenkonzentration bei Anwendung der elektrostatischen Passivierung mit dem Elymat-Verfahren genau bestimmt werden. Weiterhin ist es in dieser Arbeit erstmals gelungen, mit dem modifizierten Elymat-Verfahren quantitativ die Grenzflächenzustandsdichte D_it und die Isolatorvolumenladung Q_Is von Isolator/Silicium-Strukturen zu bestimmen. Die dazu vorgestellten Auswerteverfahren beruhen auf einer hier entwickelten, physikalisch begründeten Modellierung der Ladungsträgerrekombination an Grenzflächenzuständen bei beleuchteten Elektrolyt/Isolator/Silicium-Strukturen. Die Modellierung erlaubt es, die beim modifizierten Elymat-Verfahren gemessene Abhängigkeit des photoinduzierten Diffusionsstroms von der Grenzflächenrekombination über den gesamten Injektionsbereich des Messgerätes mit sehr guter Übereinstimmung zu beschreiben. Dies ist durch Messungen an einer Vielzahl von thermisch oxidierten Siliciumproben mit unterschiedlichen Oxiddicken bzw. nachfolgenden Temperschritten gezeigt worden. An Hand der Ergebnisse konnten dabei optimierte Messbedingungen für das modifizierte Elymat-Verfahren bestimmt werden. Für die Empfindlichkeit des modifizierten Elymat-Verfahrens hinsichtlich der Bestimmung der Grenzflächenzustandsdichte kann für Proben mit hoher Volumenlebensdauer ein Wert von ca. 1-5*10^9 cm^-2eV^-1 abgeschätzt werden. Die mit dem modifizierten Elymat-Verfahren ermittelten Werte für D_it und Q_Is stimmen sehr gut mit Messergebnissen von etablierten Messverfahren (Konduktanz- bzw. Kapazitäts-Spannungs-Verfahren) an Vergleichsproben überein. Die für die quantitative Bestimmung von D_it und Q_Is benötigten Werte für die Parameter der physikalischen Modellierung konnten ebenfalls experimentell bestimmt bzw. verifiziert werden. Somit konnte in dieser Arbeit gezeigt werden, dass das modifizierte Elymat-Verfahren sehr gut für die exakte und schnelle Prozesskontrolle von Oxidationsprozessen geeignet ist

    Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

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    This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.Electronic Components, Technology and MaterialsMicroelectronic

    Investigation of high-k dielectric stacks by C-AFM: Advantages, limitations, and possible applications

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    S.79-118This chapter demonstrates the capability and the accuracy of tunneling atomic force microscopy (TUNA) and conductive atomic force microscopy (C-AFM) by comparing measurement results with data from conventional macroscopic current-voltage (I-V) methods. C-AFM/TUNA characterization complements conventional I-V measurements on metal-insulator-semiconductor (MIS) structures by accessing higher current densities. The chapter also addresses several limitations (e.g., parasitic capacitances in the pF range resulting from the cantilever of the probe and the probe holder and displacement current) which influence sensitivity and may be a possible obstacle for correct analysis of experimental data. The feasibility of these techniques and their ability to study phenomena at nanoscale is then demonstrated by several applications. The chapter further shows the great potential of C-AFM/TUNA technique to investigate changes in high-k film morphology. It presents an approach to evaluate the thickness of the thin interfacial SiO2 layer in high-k stacks and its change with the processing conditions
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