5 research outputs found
FORCE CONSTANTS FROM RYDBERG-KLEIN-REES POTENTIAL ENERGY CURVES.
No full textAuthor Institution: Physics Department, Illinois Institute of TechnologyWe have calculated equilibrium force constants internuclear separation, U = potential energy, e = equilibrium] from the Rydberg-Klein-Rees potential energy curves for 11 diatomic molecules. The results are in good agreement with the values previously calculated from , which was derived from the harmonic potential energy function [c = speed of light in vacuum, classical vibrational frequency in cycles/sec for infinitesimal amplitudes, reduced mass]. This is as it should be since the force per unit displacement at should be the same for any valid potential energy curve. The values of for isotopes of these molecules were nearly the same as for the ordinary molecules. For HCI, the values were: microdynes/picometer. If the molecule were a harmonic oscillator, the force derivative function would be the same for all values of r, but for the actual molecule the values of this function vary with r. At ; at is the value of r at the inflection point i on the potential energy curve]. The average value of for the vibrational state v can be taken as the effective force constant in that vibrational state. We have calculated values of from the R-K-R curve of for several values of v. As v increases from 0 to 9, decreases from to . Effective force constants and for and were calculated for the 11 molecules. In all cases, and were larger than and smaller than observed wave number in cycles/cm]. For , the values are:
Conduction Mechanisms and Low-Temperature Anomalies in the Electrical Characteristics of Ga– —A Liquid Metal Schottky Structure
No full textSchottky Barriers on Layered Anisotropic Semiconductor – WSe<sub>2</sub> – with 1000 Å Indium Metal Thickness
No full textStability of liquid metal Schottky contacts
No full text184-187All
evolutionary aspects of Schottky barriers e.g. the factors contributing to the
band alignment at metal-semiconductor interfaces, are still not well
understood. Liquid metal-semiconductor interfaces provide an opportunity to
probe them since their formation process eliminates or minimizes many
influencing factors e.g. formation of oxide layer, changes in surface
morphology due to impact of deposited metal atoms etc. when compared to the
formation of solid metal semiconductor interfaces. However, the liquid state of
metal possessing higher equilibrium thermodynamic energy, may induce
instability at interfaces by inducing interfacial reactions ultimately showing
up in ageing effect. The liquid metals namely Hg and Ga on p-type silicon show no such effect and hence can be fruitfully
exploited for probing evolutionary aspects of metal-semiconductor interfaces
through liquid metal route
