1,721,026 research outputs found
Hydrogen In Amorphous Germanium-carbon
No full textThis work shows the study of the hydrogen influences in the structural properties of amorphous germanium-carbon alloys prepared by the RF cosputtering technique. The films were prepared in the all range of carbon content, from 0-100 at.%. The study of hydrogen properties was performed using thermal desorption, infrared and Raman spectroscopes. All the samples have total hydrogen content smaller than 25 at.%, indicating that the films have low presence of polymeric sites, bonded to germanium and carbon. The effusion spectra indicate that the hydrogen atoms are strongly bonded to germanium and carbon. The exo-diffusion promotes the increase in the concentration of germanium-carbon bonds, and graphite clusters. © 1999 Elsevier Science S.A. All rights reserved.343-3441-2445448Picraux, S.T., Vook, F.L., Stein, H.J., (1979) Defects and Radiation Effects in Semiconductors, 46, p. 31. , J.H. Albany (Ed.)Pankove, J.I., (1985) Cryst. Lattice Defects Amorphous Mater., 11, p. 203Willardson, P.K., Beer, A.C., (1984) Semiconductors and Semimetals, p. 21. , Academic, New YorkKumar, S., Kashyap, S., Chopra, K., (1988) J. Non-Cryst. Solids, 101, p. 287Shinar, J., Wu, H., Shinar, R., Shanks, H., (1987) J. Appl. Phys., 62, p. 808White, S., McKenzie, D., (1990) J. Appl. Phys., 68, p. 3194Drusedau, T., Annen, A., Schroder, B., Freistedt, H., (1994) Philos. Mag. B, 69, p. 1Yamaguchi, T., Saito, N., Nakaaki, I., (1995) J. Appl. Phys., 78, p. 3949Marques, F.C., Vilcarromero, J., Freire Jr., F.L., (1997) Proceedings of the MRS Spring Meeting on Amorphous Silicon Technology, 467, p. 537. , E.A. Schiff, H. Hack, S. Wagner, R. Shropp, I. Shimizu (Eds.)Vilcarromero, J., Marques, F.C., Andreu, J., (1998) J. Non-Cryst. Solids, 227, p. 427Vilcarromero, J., Marques, F.C., Freire Jr., F.L., (1998) J. Appl. Phys., 84, p. 174Katayama, Y., Usami, K., Shimada, T., (1981) Philos. Mag. B, 43, p. 283Picraux, S.T., (1977) Physics Today, 42 (10), p. 51Marques, F.C., Wickboldt, P., Pang, D., Chen, J.H., Paul, W., (1998) J. Appl. Phys., , acceptedWickboldt, P., Jones, S.J., Marques, F.C., (1991) Philos. Mag. B, 64 (6), p. 655Wickboldt, P., Marques, F.C., Jones, S., Pang, D., Turner, W.A., Paul, W., (1991) J. Non-Cryst. Solids, 137, p. 8
Thermal Expansion Coefficient, Mechanical And Structural Properties Of Hydrogenated Carbon Nitrides
No full textAmorphous hydrogenated carbon nitride films (a-C:H:N) deposited by plasma enhanced chemical vapor deposition of methane (CH 4) and nitrogen (N 2), under low (- 200 V) and high (- 800 V) bias voltage are investigated. The nitrogen content was obtained from X-ray photoelectron spectroscopy and nuclear reaction analysis. Raman measurements were performed at 514 nm (visible) and 244 nm (UV) wavelengths. Mechanical properties (Young's modulus and hardness) and thermal expansion coefficient (TEC) were studied using the bending beam method. Raman spectroscopy shows that the incorporation of nitrogen in a-C:H reduces the disorder in the film, independent of the initial structure of the a-C:H films (tetrahedral-, diamond-, or graphitic-like). The TEC is related to the Raman parameters associated with the degree of sp 2 ordering (aromatic rings) in the film structure, increasing with the nitrogen incorporation. © 2012 Elsevier B.V. All rights reserved.25124127Morrison, N.A., Muhl, S., Rodil, S.E., Ferrari, A.C., Nesladek, M., Milne, W.I., Robertson, J., (1999) Phys. Status Solidi A, 172, p. 79Grill, A., (1998) Wear, 168, p. 143Grill, A., (1999) Diamond Relat. Mater., 8, p. 428Rodil, S.E., Milne, W.I., Robertson, J., Brown, L.M., (2000) Appl. Phys. Lett., 77, p. 1458Hu, J.T., Yang, P.D., Lieber, C.M., (1998) Phys. Rev. B, 57, p. 3185Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett., 73, p. 617Champi, A., Marques, F.C., Freire, F.L., (2004) Diamond Relat. Mater., 13, p. 1538Oliver, W.C., Pharr, G.M., (2004) J. Mater. Res., 19, p. 3Scheider, D., Meyer, C.F., Mai, H., Schoneich, B., Ziegele, H., Scheibe, H.J., Lifshitz, Y., (1998) Diamond Relat. Mater., 7, p. 973Stoney, G.C., (1909) Proc. R. Soc. Lond. A, 32De Lima, Jr.M.M., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86, p. 4936Hoffman, R.W., (1996) Physics of Non-metallic Thin Films, , Academic press New YorkMarques, F.C., Lacerda, R.G., Champi, A., Stolojan, V., Cox, D.C., Silva, S.R.P., (2003) Appl. Phys. Lett., 83, p. 3099Champi, A., Barbieri, P.F., Marques, F.C., (2006) J. Non-Cryst. Solids, 352, p. 2264Ferrari, A.C., Robertson, J., (2000) Phys. Rev. B, 61, p. 14095Ferrari, A.C., Robertson, J., (2001) Phys. Rev. B, 64, p. 075414Casiraghi, C., Ferrari, A.C., Robertson, J., (2005) Phys. Rev. B, 72, p. 085401Ferrari, A.C., Rodil, S.E., Robertson, J., (2003) Phys. Rev. B, 67, p. 155306Muhl, S., Mendez, J.M., (1999) Diamond Relat. Mater., 8, p. 180
Thermal Expansion Coefficient Of Amorphous Carbon Nitride Thin Films Deposited By Glow Discharge
No full textThe thermal expansion coefficient of a-CNx:H thin films was determined by the thermally induced bending technique. The films were deposited by glow discharge under methane and nitrogen atmosphere, and analyzed by FTIR and Raman spectroscopies, nanohardness, and stress measurements. Drastic changes of the film structure were observed as a result of the nitrogen incorporation, from 0 to 7%. The increase of nitrogen concentration reduces the deposition rate, stress, hardness, and the elastic constant of the films. It was also observed that the thermal expansion coefficient has a significant increase from approximately 2-9×10-6/K, which was associated with the increase in the sp2 concentration induced by the N incorporation, and with the increase in the concentration of C-N bonds. In spite of that, stable and thick (∼ 2 μm) films were deposited at moderate deposition rate (0.3 nm/s), relatively high hardness (13 GPa), and low stress (0.6 GPa). © 2002 Elsevier Science B.V. All rights reserved.420-421200204Liu, A., Cohen, L., (1989) Science, 245, p. 841Li, D., Chung, Y.-W., Wong, M.-S., Sproul, W.D., (1993) J. Appl. Phys., 74, p. 219Sjostrom, H., Stafstrom, S., Boman, M., Sundgren, J.-E., (1995) Phys. Rev. Lett., 75, p. 1336Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett., 73, p. 617Lacerda, R.G., Marques, F.C., Freire F.L., Jr., (1999) Diamond Relat. Mater., 8, p. 495Lacerda, R.G., Stolojan, V., Cox, D.C., Silva, S.R.P., Marques, F.C., (2002) Diamond Relat. Mater., 11, p. 980Oliver, W.C., Pharr, G.M., (1992) J. Mat. Res., 7, p. 1564De Lima M.M., Jr., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86 (9), p. 4936Stoney, G.C., (1909) Proc. R. Soc. Lond., A32, p. 172Hoffman, R.W., (1966) Physics of Thin Films, 3. , New York: Academic PressHoffman, R.W., (1970) Physics of Non-metallic Thin Films, B-14. , New York: Plenum PressFreire F., Jr., (1997) Jpn J. Appl. Phys., 36, p. 4886Franceschini, D.F., Achete, C.A., Freire F., Jr., (1992) Appl. Phys. Lett., 60, p. 3229Kaufman, J.H., Metin, S., (1989) Phys. Rev. B, 39, p. 13053Chattopadhyay, S., Chen, L.C., Wu, C.T., Chen, K.H., Wu, J.S., Chen, Y.F., Lehmann, G., Hess, P., (2001) Appl. Phys. Lett., 79 (3), p. 332Das, D., Chen, K.H., Chattopadhyay, S., Chen, L.C., (2002) J. Appl. Phys., 91 (8), p. 4944Ferrari, A.C., Robertson, J., (2000) Phys. Rev. B, 61, p. 14095Friedmann, T.A., Sullivan, J.P., Knapp, J.A., Tallant, D.R., Follstaedt, D.M., Medlin, D.L., Mirkarimi, P.B., (1977) Appl. Phys. Lett., 71, p. 3820Jacobsohn, J.G., Freire F.L., Jr., Franceschini, D.F., Lacerda, M.M., Mariotto, G., (1999) J. Vac. Sci. Technol. A, 17 (2), p. 545Wang, J.S., Sugimura, Y., Evans, A.G., Tredway, W.K., (1998) Thin Solid Films, 325, p. 16
Influence Of Hydrogen On The Thermomechanical Properties Of A-cnx:h And A-cnx Films Deposited By Glow Discharge And Ion Beam Assisted Deposition
No full textThe coefficient of thermal expansion (CTE), Young's modulus, Poisson's ratio, stress and hardness of a-CNx and a-CNx:H were investigated as a function of nitrogen concentration. Hydrogenated films were prepared by glow discharge, GD, and unhydrogenated films were prepared by ion beam assisted deposition, IBAD. Using nanohardness measurements and the thermally induced bending technique, it was possible to extract separately, Young's modulus and Poisson's ratio. A strong influence of hydrogen, in a-CNx:H films, was observed on the CTE, which reaches about ∼9 × 10-6 C-1, close to that of graphite (∼8 × 10-6 C-1) for nitrogen concentration as low as 5 at.%. On the other hand, the CTE of unhydrogenated films increases with nitrogen concentration at a much lower rate, reaching 5.5 × 10-6 C-1 for 33 at.% nitrogen. © 2006 Elsevier B.V. All rights reserved.35221-2222642266Liu, A.M., Cohen, M., (1989) Science, 245, p. 841Muhl, S., Mendez, J.M., (1999) Diam. Relat. Mater., 8, p. 1809Badzian, A., Badzian, T., (1999) Thin Solid Films, 354, p. 148Cutiongco, E.C., Li, D., Chung, Y.W., (1996) J. Tribol., 118, p. 543Robertson, J., (2001) Thin Solids Films, 383, p. 81Marques, F.C., Lacerda, R.G., Champi, A., Stolojan, V., Cox, D.C., Silva, S.R.P., (2003) Appl. Phys. Lett., 83, p. 3099Champi, A., Lacerda, R.G., Marques, F.C., (2003) Microelectr. J., 34, p. 553Champi, A., Marques, F.C., Freire, F.L., (2004) Diam. Relat. Mater., 13, p. 1538Hammer, P., Victoria, N.M., Alvarez, F., (2000) J. Vac. Sci. Technol. A, 18 (5), p. 2277de Lima Jr., M.M., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86, p. 4936Nelson, J.B., Riley, D.P., (1945) Proc. Phys. Soc. London, 57, p. 47
Esr Investigation Of Graphite-like Amorphous Carbon Films Revealing Itinerant States As The Ones Responsible For The Signal
No full textThe origin of paramagnetic centers in graphite-like amorphous carbon is investigated. The films were deposited by the ion beam assisted deposition (IBAD) and have a concentration of sp2 sites of about 90% and zero energy band gap. The density of the film and the electrical resistivity are close to these of crystalline graphite. However, the hardness and stress of the films are similar to those of diamond-like carbon. Electron spin resonance (ESR) performed at the X-band (9.4 GHz) revealed an unexpected low density of paramagnetic centers, ascribed to conduction electrons with a g-value of about 2.003. © 2008 Elsevier B.V. All rights reserved.35419-2521352137Robertson, J., (1996) PRB, 53 (24), p. 16302Barklie, R.C., (2001) Diam. Relat. Mater., 10, p. 174Lacerda, R.G., Hammer, P., Lepiensky, C.M., Alvarez, F., Marques, F.C., (2001) J. Vac. Sci. Technol. A, 19 (3), p. 971Poa, C.H., Lacerda, R.G., Cox, D.C., Silva, S.R.P., Marques, F.C., (2002) Appl. Phys. Lett., 81 (5), p. 853Sercheli, M.S., Kopelevich, Y., Ricardo da Silva, R., Torres, J.H.S., Rettori, C., (2002) Solid State Commun., 121, p. 579Von Bardeleben, H.J., Cantin, J.L., Zeinert, A., Racine, B., Zellama, K., Hai, P.N., (2001) Appl. Phys. Lett., 78 (19), p. 2843Hoinkis, M., Tober, E.D., White, R.L., Crowder, M.S., (1992) Appl. Phys. Lett., 61 (22), p. 265
Influence Of Stress On The Field Emission Properties Of Amorphous Carbon Thin Films And Multiwall Carbon Nanotube-polymer Composites
No full textThe effects compressive stress on the field emission properties of amorphous carbon thin films and multiwall carbon nanotube (MWCN) polymer composites were investigated. In the study, the nanocrystalline films and MWNT composite thin films were subject to external stress by mechanical bending. The field emission results from C films with different intrinsic stresses were compared. The results showed that the threshold field increases with the increase in stress.194195Poa, C.H., Lacerda, R.G., Cox, D.C., Silva, S.R.P., Marques, F.C., (2002) Appl. Phys. Lett., 81, p. 85
Thermal Expansion Dependence On The Sp2 Concentration Of Amorphous Carbon And Carbon Nitride
No full textThe coefficients of thermal expansion of hydrogenated amorphous carbon (a-C:H) and carbon nitride (a-CNx:H) were determined using the thermally induced bending technique. Amorphous carbon films were prepared with different sp2 concentrations by varying the bias voltage in a glow discharge system in methane atmosphere. Carbon nitride films (a-CN x:H) were deposited by introducing nitrogen gas. It was observed that the thermal expansion of a-C:H depends on the concentration of sp2 bonded carbon, increasing to the value of graphite as the sp2 concentration approaches 100%. Similar effect was also observed in the carbon nitride films. © 2004 Elsevier B.V. All rights reserved.338-3401 SPEC. ISS.499502Liu, A.M., Cohen, M., (1989) Science, 245, p. 841Muhl, S., Mendez, J.M., (1999) Diamond Relat. Mater., 8, p. 1809Badzian, A., Badzian, T., (1999) Thin Solid Films, 354, p. 148Hellgren, N., Johansson, M.P., (1999) Phys. Rev. B, 59, p. 5162Cutiongco, E.C., Li, D., Chung, Y.W., (1996) J. Tribol., 118, p. 543Robertson, J., (2001) Thin Solids Films, 383, p. 81Lee, H.J., Zubeck, R., Hollars, D., Lee, J.K., Smallen, M., Chao, A., (1993) J. Vac. Sci. Technol. A, 11 (6), p. 3007Wang, J.S., Sugimura, Y., Evans, A.G., Tredway, W.K., (1998) Thin Solid Films, 325, p. 163Demichelis, F., Pirri, C.F., Tagliaferro, A., Benedetto, G., Boarino, L., Spagnolo, R., Dunlop, E., Gissler, W., (1993) Diamond Relat. Mater., 2, p. 890De Lima Jr., M.M., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86 (9), p. 4936Marques, F.C., Vilcarromero, J., Lacerda, R.G., (2000) Appl. Phys. A, 71 (6), p. 633Champi, A., Lacerda, R.G., Marques, F.C., (2003) Microelectron. J, 34 (5-8), p. 553Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett., 73 (5), p. 617Oliver, W.C., Pharr, G.M., (1992) J. Mater. Res., 7, p. 1564Hoffman, R.W., (1970) Physics of Non-metallic Thin Films, B-14. , New York: PlenumPickrell, D.J., Kline, K.A., Taylor, R.E., (1994) Appl. Phys. Lett., 64 (18), p. 2353Nelson, J.B., Riley, D.P., (1945) Proc. Phys. Soc., 57 (6), p. 477Hu, J., Yuan, P., Lieber, C.M., (1998) Phys. Rev. B, 57, pp. R3185Rodil, S.E., Milne, W.I., Robertson, J., Brown, L.M., (2000) Appl. Phys. Lett., 77, p. 1458Ferrari, A.C., Robertson, J., (2000) Phys. Rev. B, 6
Influence Of Stress On The Electron Core Level Energies Of Noble Gases Implanted In Hard Amorphous Carbon Films
No full textIn this work, we report the influence of the structural properties of the amorphous carbon matrix on the core-level electrons of implanted noble gases (Ar, Ne and Kr) used in the sputtering deposition process. The films were prepared in an ion beam-assisted deposition chamber (IBAD) including two Kauffman ion sources. Some fractional noble gas is trapped in the film during the assisted deposition and is subjected to the highly strained environment of the carbon matrix. X-Ray photoelectron spectroscopy shows that the noble-gas core-level energies shift linearly to lower binding energies with increasing compressive stress. It is suggested that these shifts are caused by compression of the outer valence wave-function of the implanted gas and by an extra-screening effect from valence electrons of the host atoms. The use of noble-gas core-level energy is proposed as a probe to determine the film stress. © 2001 Elsevier Science B.V. All rights reserved.103-7956959Robertson, J., (1991) Prog. Solid State Chem., 21, p. 199Andre, B., Rossi, F., Van Veen, A., Mijnarends, P.E., Schut, H., Delplancke, M.P., (1994) Thin Solid Films, 241, p. 171Fleischer, E.L., Norton, M.G., (1996) Heterogen. Chem. Rev., 3, p. 171De Lima M.M., Jr., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys., 86, p. 4936Ley, L., The Physics of Hydrogenated Amorphous Silicon II (1984) Topics in Applied Physics, 56, p. 67. , J.D. Jonapoulos, & G. Lucovsky. Berlin: SpringerKatayama, Y., Shimada, T., Usami, K., (1981) Phys. Rev. Lett., 17, p. 1146Lifshitz, Y., Lempert, G.D., Grossman, E., (1995) Diamond Relat. Mater., 4, p. 318Fallon, P.J., Veerasamy, V.S., Davis, C.A., (1993) Phys. Rev. B, 48, p. 4777Lacerda, R.G., Hammer, P., Freire F.L., Jr., Alvarez, F., Marques, F.C., (2000) Diamond Relat. Mater., 9, p. 796Lacerda, R.G., Hammer, P., Alvarez, F., Marques, F.C., J. Vac. Sci. Technol. a, , in printKim, K.S., Winograd, N., (1975) Chem. Phys. Lett., 30, p. 91Grill, A., (1999) Diamond Relat. Mater., 8, p. 428Fung, M.K., Lai, K.H., Chan, C.Y., (2000) Diamond Relat. Mater., 9, p. 815Citrin, P.H., Hamann, D.R., (1973) Chem. Phys. Lett., 22, p. 301Citrin, P.H., Hamann, D.R., (1974) Phys. Rev B, 10, p. 4948Cardona, M., Ley, L., (1978) Photoemission in Solids I, Topics in Applied Physics, 26, p. 70. , Spinger-Verlag, New YorkEvans, S., (1980) Proc. R. Soc. Lond. a, 370, p. 107Johansson, G., Hedman, J., Berndtsson, A., Klasson, M., Nilsson, R., (1973) J. Electron. Spectrosc. Relat. Phenom., 2, p. 295Watson, R.E., Herbst, J.F., Wilkins, J.W., (1976) Phys. Rev. B, 14, p. 18Waclawski, B.J., Gadzuk, J.W., Herbst, J.F., (1978) Phys. Rev. Lett., 41, p. 58
Optoelectronic And Structural Properties Of A-ge1-xcx:h Prepared By Rf Reactive Cosputtering
No full textOptoelectronic structural, and mechanical properties of hydrogenated amorphous germanium carbon (a-Ge1-xCx:H) alloys are presented. The films were prepared by the rf cosputtering technique using graphite-germanium composite targets. Films with carbon contents in the 0<x <1 range were prepared under the same conditions used to obtain a-Ge:H films with good optoelectronic properties. The trends of the optical gap, infrared absorption, dark conductivity, and mechanical stress as a function of the carbon content suggest that the properties of films with low carbon concentration are mainly controlled by the incorporation of sp3 hybridized carbon. These films have good optoelectronic and structural properties. As the carbon content increases, the properties of the films are determined by the concentration of sp2 carbon sites. © 1998 American Institute of Physics.841174180Marques, F.C., Chambouleyron, I., (1989) Proceedings of the 9th European Conference on Photovoltaic Solar Energy, pp. 1042-1045. , edited by W. Palz, G. T. Wrixon, and P. Helm Kluwer, DordrechtZanatta, A.R., Chambouleyron, I., (1992) Phys. Rev. B, 46, p. 2119Turner, W.A., Jones, S.J., Pang, D., Bateman, B.F., Chen, J.H., Li, Y.-M., Marques, F.C., Theye, M.L., (1990) J. Appl. Phys., 67, p. 7430Liu, E.Z., Pang, D., Paul, W., Chen, J.H., (1992) Mater. Res. Soc. Symp. Proc., 258, p. 529Chambouleyron, I., Marques, F.C., (1989) J. Appl. Phys., 65, p. 1591Pascarelli, S., Boscherini, F., Mobilio, S., Zanatta, A.R., Marques, F.C., Chambouleyron, I., (1992) Phys. Rev. B, 46, p. 6718Vilcarromero, J., Marques, F.C., (1995) Phys. Status Solidi B, 192, p. 543Marques, F.C., Lacerda, R.G., Lima Jr., M.M., Vilcarromero, J., (1995) Phys. Status Solidi B, 192, p. 549Taylor, A., Doyle, N.J., (1967) Scr. Metall., 1, p. 161Booth, D., Voss, K., (1981) J. Phys., 42, p. 10. , FranceKumar, S., Kashyap, S., Chopra, K., (1988) J. Non-Cryst. Solids, 101, p. 287Kumar, S., Trodahl, H., (1990) Thin Solid Films, 193-194, p. 72Yuan, H., Williams, R., (1993) Chem. Mater., 5, p. 479Anderson, D., Spear, W., (1977) Philos. Mag., 35, p. 1Catherine, Y., Turban, G., (1980) Thin Solid Films, 70, p. 101Nitta, S., Sakaida, M., Musare, I., Kawai, M., Matsumani, N., (1985) J. Non-Cryst. Solids, 77-78, p. 983White, S., McKenzie, D., (1990) J. Appl. Phys., 68, p. 3194Gazicki, M., Pirker, K., Schallauer, R., Fallmann, W., Olcaytug, F., Urban, G., Kohl, F., (1990) Thin Solid Films, 187, p. 51Shimizu, T., Kumeda, M., Kiriyama, Y., (1981) Solid State Commun., 37, p. 699Shimizu, T., Kumeda, M., Kiriyama, Y., (1981) AIP Conf. Proc., 73, p. 171Morimoto, A., Kataoka, T., Kumeda, M., Shimizu, T., (1984) Philos. Mag. B, 50, p. 517Shinar, J., Wu, H., Shinar, R., Seaverson, L., Shanks, H., (1987) J. Vac. Sci. Technol. A, 5, p. 1318Shinar, J., Wu, H., Shinar, R., Shanks, H., (1987) J. Appl. Phys., 62, p. 808Wu, H., Shinar, J., Kumru, M., Shinar, R., Shanks, H., (1987) Bull. Am. Phys. Soc., 32, p. 679Shinar, R., Shinar, J., Wu, H., Shanks, H., (1987) J. Vac. Sci. Technol. A, 5, p. 2804Shinar, R., (1988) J. Vac. Sci. Technol, A, 6, p. 2910Shinar, R., Entringer, G., Shinar, J., Wu, H., Shanks, H., (1989) J. Vac. Sci. Technol. A, 7, p. 2998Kumru, M., (1991) Thin Solid Films, 198, p. 75Drusedau, T., Schroder, A., Freistedt, H., (1994) Philos. Mag. B, 69, p. 1Saito, N., Nakaaki, I., Yamaguchi, T., Yoshioka, S., Nakamura, S., (1995) Thin Solid Films, 269, p. 69Saito, N., Yamaguchi, T., Nakaaki, I., (1995) J. Appl. Phys., 78, p. 3949Drusedau, T.P., Schroder, B., (1995) Diffus. Defect Data, Part B, 44-46, p. 425Girginoudi, D., Thanailakis, A., Christou, A., (1987) J. Appl. Phys., 62, p. 3353Saito, N., Yamaguchi, T., (1989) J. Appl. Phys., 66, p. 3114Robertson, J., (1991) Prog. Solid State Chem., 21, p. 199Swanepoel, R., (1983) J. Phys. E, 16, p. 1214Baglin, J.E.E., Kellock, A.J., Crocket, M.A., Shih, A.H., (1992) Nucl. Instrum. Methods Phys. Res. B, 64, p. 469Taue, J., Grigorovici, R., Vancu, A., (1966) Phys. Status Solidi, 15, p. 627Hoffman, R.W., (1966) Physics on Thin Films, 3. , edited by G. Hass and R. E. Thun Academic, New YorkAndersen, H.H., Bay, H.L., (1981) Sputtering by Particle Bonbardment I, , edited by R. Behrisch Springer, Berlin, Chap. 4Wemple, S.H., Didomenico Jr., M., (1971) Phys. Rev. B, 3, p. 1338Cardona, M., (1983) Phys. Status Solidi B, 118, p. 463Connell, G.A., Pawlik, J.R., (1976) Phys. Rev. B, 13, p. 787Bounouh, Y., Thèye, M.L., Dehbi-Alaoui, A., Mattews, A., Stoquert, J.P., (1995) Phys. Rev. B, 51, p. 9597Bullot, J., Schmidt, M.P., (1987) Phys. Status Solidi B, 143, p. 345Chhowalla, M., Robertson, J., Chen, C., Silva, S.R.P., Davis, C., Amaratunga, G.A., Milne, W., (1997) J. Appl. Phys., 81, p. 139Helmbold, A., Hammer, P., Thiele, J.U., Rohwer, K., Meissner, D., (1995) Philos. Mag. B, 72, p. 335Wickbolt, P., Marques, F.C., Jones, S., Pang, D., Turner, W., Paul, W., (1991) J. Non-Cryst. Solids, 137-138, p. 83Doerner, M., Nix, W., (1988) CRC Crit. Rev. Solid State Mater. Sci., 14, p. 225Jiang, X., Zou, J.W., Reichelt, K., Gruember, P., (1989) J. Appl. Phys., 66, p. 472
Structural Characterization Of Hard A-c:h Films As A Function Of The Methane Pressure
No full textHard a-C:H films have been deposited at an industrially significant growth rate (∼0.7 nm/s), with high hardness (∼19 GPa) and relatively low stress (∼1.3 GPa). The films were obtained by the decomposition of methane in a r.f. environment at unusually conditions of high bias (∼800 V) and high pressure (∼12 Pa). The properties of the films were determined using optical transmission spectroscopy, electron energy loss spectroscopy (EELS), Raman spectroscopy, nanohardness, and stress measurements. The structural analysis indicates that the material is composed of approximately 58% sp2 sites, yet maintaining a relatively high hardness. It is thought that the sp2 sites contribute to the film hardness, together with the remaining sp3 C-C sites. The main advantage of the films reported is the very high deposition rate coupled with the relatively low stress, which enables the growth of very thick films (>2 μm) suitable for application such as protective coatings. © 2002 Elsevier Science B.V. All rights reserved.113-6980984Lacerda, R.G., Marques, F.C., (1998) Appl. Phys. Lett, 73, p. 617Lacerda, R.G., Marques, F.C., Freire, F.L., (1999) Diamond Relat. Mater, 8, p. 495McMullan, D., Fallon, P.J., Ito, J., McGibbon, A.J., (1992) ERUM 92, p. 103. , Granada. SpainMenon, N.K., Yuan, J., (1998) Ultramicroscopy, 74, p. 83Hoffman, R.W., (1966) Physics on Thin Films, 3. , G. Hass, R.E. Thun (Eds.), Academic Press, NYde Lima, M.M., Lacerda, R.G., Vilcarromero, J., Marques, F.C., (1999) J. Appl. Phys, 86, p. 4936Fallon, P.J., Veerasamy, V.S., Davis, C.A., Robertson, J., Amaratunga, G.A.J., Milne, W.I., (1993) Phys. Rev. B, 48, p. 4777Jiang, X., Reichelt, K., Stritzer, B., (1989) J. Appl. Phys, 66, p. 5805Zou, J.W., Reichelt, K., Schmidt, K., Discher, B., (1989) J. Appl. Phys, 65, p. 3915Jiang, X., Reichelt, K., Stritzer, B., (1989) J. Appl. Phys, 66, p. 1018Schwan, J., Ulrich, S., Jung, K., Ehrhardt, H., Samlenski, R., Brenn, R., (1995) Diamond Relat. Mater, 4, p. 304Catherine, Y., Couderc, P., (1986) Thin Solid Films, 144, p. 265Gielen, J.W.A.M., van de Sanden, M.C.M., Schram, D.C., (1996) Appl. Phys. Lett, 69, p. 152Franceshini, D.F., Achete, C.A., Freire, F.L., (1992) Appl. Phys. Lett, 60, p. 3229Chhowalla, M., Yin, Y., Amaratunga, G.A.J., Mckenzie, D.R., Frauenheim, T., (1996) Appl. Phys. Lett, 69, p. 2344Ferrari, A.C., Kleinsorge, B., Morrison, N.A., Hart, A., Stolojan, V., Robertson, J., (1999) J. Appl. Phys, 85, p. 7191Damasceno, J.C., Camargo, S.S., Freire, F.L., Carius, R., (2000) Surf. Coat. Technol, 133, p. 247Robertson, J., (1993) Diamond Relat. Mater, 2, p. 984Silva, S.R.P., Robertson, J.R., Amaratunga, G.A.J., (1996) Phil. Mag. B, 74, p. 369Ferrari, A.C., Robertson, J., (2000) Phys. Rev. B, 61, p. 14095Schwan, J., Ulrich, S., Batori, V., Ehrhardt, H., Silva, S.R.P., (1996) J. Appl. Phys, 80, p. 440Amaratunga, G.A.J., Chhowalla, M., Keily, C.J., Alexandru, I., Devenish, R.M., (1996) Nature, 383, p. 321. , LondonAlexandru, I., Scheibe, H.-J., Kiely, C.J., Papworth, A.J., Amaratunga, G.A.J., Schultrich, B., (1999) Phys. Rev. B, 60, p. 10903Lacerda, R.G., Hammer, P., Lepienski, C.M., Alvarez, F., Marques, F.C., (2001) J. Vac. Sci. Technol. A, 19, p. 97
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