1,721,008 research outputs found
Automatic TCAD model calibration for multi-cellular Trench-IGBTs
No full textTCAD simulators are a consolidate tool in the field of the semiconductor research because of their predictive capability. However, an accurate calibration of the models is needed in order to get quantitative accurate results. In this work a calibration procedure of the TCAD elementary cell, specific for Trench IGBT with a blocking voltage of 600 V, is presented. It is based on the error minimization between the experimental and the simulated terminal curves of the device at two temperatures. The procedure is applied to a PT-IGBT and a good predictive capability is showed in the simulation of both the short-circuit and turn-off tests. © © 2013 Elsevier B.V. All rights reserved
Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode
No full textUnder certain conditions, self-sustained oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the self-sustained oscillation are identified based on the double-pulse test. To investigate the instability of the two types of oscillation, a small signal ac model of the half-bridge circuit is proposed. With the model utilized, the parametric sensitivities of various parameters on the self-sustained oscillation are analyzed. The analyses reveal the oscillatory criteria, which provides effective guidelines to prevent the oscillation. In the end, the oscillation prevention guidelines are validated by the experiment. The experimental results demonstrate that the proposed theoretical treatment can provide reasonable guidelines to suppress the two types of self-sustained oscillation
A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM
No full textIn this paper, two implementations of a SPICE-based compact model for SiC MOSFETs are presented. The two versions rely on widely adopted LEVEL-3 and BSIM 4.6.1 models, respectively. The paper discusses the feasibility of adopting these two models for the description of SiC power MOSFETs. Furthermore, after calibrating the DC characteristics on target experimental data coming from 1.7 kV-60 A MOSFETs, a comparison between the accuracy of the two is presented
On the avalanche ruggedness of optimized termination structure for 600 v punch-through IGBTs
No full textIn this paper, the current paths in avalanche conditions of a Floating Field Ring (FFR) termination for a Punch-Through (PT) Insulated Gate Bipolar Transistor (IGBT) are analyzed. The design of the termination region is achieved with two different optimization techniques, and both static and dynamic electrical behavior are analyzed by means of 2D TCAD simulations, up to high current density levels. A comprehensive analysis of the Unclamped Inductive Switching (UIS) operation of the proposed terminations is carried-out with electro-thermal simulations. Although the behavior of both structures at low current levels is different, results show the same current crowding effect at the main junction for high current levels, resulting in a reduced conduction area of the overall termination, hence, of the avalanche reliability. Finally, experimental confirmation of filamentary current conduction during UIS test are detected on 600 V commercial devices by means of transient infrared thermography. © 2016 Elsevier Ltd. All rights reserved
Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode
No full textThis paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-sustained oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-sustained oscillation is reproduced. The simulation results reveal the root cause of the self-sustained oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate-source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-sustained oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the oscillation are presented
Physically based analytical model of the blocking I?V curve of Trench IGBTs
No full textIn this paper a physical model for the evaluation of the I–V curve in avalanche condition of the vertical PNP of an IGBT is presented. A two-zone linear approximation for the electric field in the depletion region is adopted and the slope of the two regions is defined from the total current and the ratio between the electrons and holes fluxes. The ratio between the electrons and holes which flow into the depletion region is evaluated by means of an accurate charge control model which provides the β of the PNP up to high injection current levels
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
No full textThis paper provides an experimental investigation through infrared thermography of the steady-state temperature imbalance arising in parallel SiC MOSFETs. A switched-mode boost power converter based on two arrays of 4 parallel 1.2 kV MOSFETs is selected as a case-study. The analysis aims at proving that a proper device arrangement can minimize the thermal imbalance in the absence of circuit layout optimization. © 2024 The Author(s)
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