1,721,116 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits
No full textObservation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions
No full textAnomalous suppression of single-electron tunneling observed for Si nanobridge transistors with a suspended quantum dot cavity
No full textSilicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K
Full text linkA radio frequency single-electron transistor (RF-SET) based on a silicon-on-insulator (SOI) substrate is demonstrated to operate successfully at temperatures above 4.2 K. The SOI SET was fabricated by inducing lateral constrictions in doped SOI nanowires. The device structure was optimized to overcome the inherent drawback of high resistance with the SOI SETs. We performed temperature variation measurements after five thermal cyclings of the same sample to 4.2 K and found that the single-dot device transport characteristics are highly stable. The charge sensitivity was measured to be 36 µerms Hz-1/2 at 4.2 K, and the RF-SET operation was demonstrated up to 12.5 K for the first time. This work is an important prerequisite to realizing operation of RF-SETs at noncryogenic temperature
Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors
No full textVariations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors
No full textThis paper reports the study of the uncontrolled multiple tunnel junctions (MTJs) induced by the random dopants in heavily doped silicon single electron transistors (SETs). The SETs are fabricated by making dual lateral constrictions in the narrow doped silicon channel formed on a silicon on insulator substrate. The doped SETs with relatively long constriction regions invariably exhibit the MTJ characteristics. The influence of the MTJs is suppressed by tuning the Fermi level in the constriction region. Finally, we show that the formation of uncontrolled MTJs can be avoided by making extremely sharp constriction
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