677 research outputs found
Corporate Governance, Evolution of Corporate Laws and Asian Economic Development into the 21st Century
No full textThe purpose of this paper is to build on the Wellon - Piston analysis and to make two specific proposals for the further evolution of corporate law in Asian countries. The first of these proposals is designed to deal with important aspects of the current economic and financial crisis in South East and East Asia. It addresses the problem of corporate restructuring in these countries in the wake of the economic crisis and considers specifically the case of South Korea. The second proposal is concerned with the more general issue of corporate governance in semi-industrial countries and refers particularly to the Indian situation. The two proposals are not, however, entirely independent. The first proposal could potentially have significant implications for corporate governance while the second proposal is also likely to be helpful in the restructuring of the Asian economies as they begin to recover from the crisis.corporate governance; asia; corporate law
Arbitration and Dispute Settlement in Foreign Indirect Investment. The increasing significance and use of arbitration in international loan agreements, syndicated loans and international bond issues
No full textThis dissertation examines the suitability of arbitration for the resolution of securities regulatory claims and it adoption globally, which has resulted in international arbitration becoming the favoured dispute resolution mechanism in the securities industry. The author explains that disputes arising out of international bilateral and syndicated loan agreements are generally considered to be arbitrable, while international bond disputes are often derived from the controversies over the application of mandatory national laws and the compliance with securities regulation provisions - so the arbitrability of international bond disputes depends on the acceptance of the arbitrability of securities regulatory claims
A monolithically integrated power JFET and Junction Barrier Schottky diode in 4H silicon carbide
No full textEfficiency of power management circuits depends significantly on their constituent switches and rectifiers. The demands of technology are increasingly running up against the intrinsic properties of Si based power devices. 4H-Silicon Carbide (SiC) has superior properties that make it attractive for high power applications. SiC rectifiers are already a competitive choice and SiC switches have also been commercialized recently. Junction Barrier Schottky (JBS) diodes, which combine the advantages of PN and Schottky, have higher Figure of Merit (FOM) as rectifiers. Among switches, a robust and mature process has been developed for Silicon Carbide Vertical Junction Field Effect Transistors (VJFETs), which currently gives it the highest unipolar FOM. Switches are frequently combined with anti-parallel diodes in power circuits. This thesis describes the development of a SiC-based monolithically integrated power switch and diode. Monolithic integration increases reliability and efficiency, and reduces cost. Because of their superior properties and similarities in fabrication, we chose the SiC VJFET and JBS diode as the switch and rectifier. Detailed design, fabrication and characterization of the integrated switch to block above 800 V and conduct current beyond 100 A/cm2 is explained. In this process, the first physics-based 2-D compact model is developed for reverse leakage in a JBS diode as a function of design parameters. Since the gate-channel junctions of SiC VJFETs cannot be assumed to be abrupt, an existing analytical model for Si VJFETs is extended to account for graded gate-channel junctions. Using these analytical models, design rules are developed for the VJFET and JBS diode. Finite element simulations are used to find the best anode layout of the JBS diode and optimize electric field termination in the integrated device to ensure their capability to operate at high voltage. Finally, a spin-on glass based process is developed for filling the gate trenches of the VJFET to improve long-term robustness in extreme environments. The integrated power switch developed in this thesis points to the attractions of monolithic integration in SiC power circuits. Analytical compact design equations derived here will facilitate faster and easier design of switches and rectifiers for desired circuit operation.Ph. D.Includes bibliographical referencesIncludes vitaby Rahul Radhakrishna
Factors of Brand Communication Tools for Promoting Services using Social Media Networking Websites
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Socio-Assessing the Training Requirements for Career Advancement and Productivity of Administrative Staff in Private Universities: a Specific Reference to NCR
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Role of Branding in the Changing Marketing Communication Environment with respect to the Service Industry: A Review
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