322,953 research outputs found
Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mrow><mml:mtext>RuO</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>Metal Nanocrystal Capacitors
Full text linkPhysical and memory characteristics of the atomic-layer-depositedRuOxmetal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. TheRuOxmetal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density ofRuOxnanocrystal is decreased (slightly) by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3nanocrystals and Hf-silicate layer at the SiO2/HfO2interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in theRuOxmetal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N) tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in theRuOxnanocrystals. Excellent program/erase endurance of 106cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in theRuOxnanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.</jats:p
Diffusive author(s), cohesive author: Analysis of S/N (1994)
No full textThis study indicates the ways in which various aspects of the author(s) are brought forth in Dumb type’s performance art, the S/N production. Previous research has suggested a non-hierarchical organization of Dumb type and the absence of a “privileged author” in Dumb type’s collaborative work, S/N. However, the results that I have investigated from member’s interviews on the creative process of S/N along with my analysis of the recorded images of S/N, indicate a different aspect of the author(s). First, S/N was created through, so to speak, the collective ideas of the members of Dumb type. Further, S/N has at least nine quotations from previous performances, installations, and printed writings, besides the work-in-progress technique. Explicating one of the “author functions” as given by Michel Foucault, each text has plural subjects of the author. However, it has been revealed from members’ interviews that Teiji Furuhashi had a decision-making role in selecting the members’ ideas within the performance. Since then, S/N has had plural subjects of creation; however, Furuhashi is one of the subjects of creation along with the “privileged author.” S/N has plural authors (diffusive authors) yet at the same time, it has a “privileged author,” Teiji Furuhashi (cohesive author)
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals
No full textBand offsets and charge storage characteristics of atomic layer deposited high-k HfO2/TiO2 multilayers
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