43 research outputs found
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Studies of double-sided silicon microstrip detectors
No full textThe electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors` leakage current, depletion voltage, bias resistance, interstrip resistance, coupling capacitance, and coupling capacitor breakdown voltage were studied
Application of p–i–n photodiodes to charged particle fluence measurements beyond <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="mml10" display="inline" overflow="scroll" altimg="si10.gif"><mml:mn>1</mml:mn><mml:msup><mml:mrow><mml:mn>0</mml:mn></mml:mrow><mml:mrow><mml:mn>15</mml:mn></mml:mrow></mml:msup></mml:math> 1-MeV-neutron-equivalent/cm<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="mml11" display="inline" overflow="scroll" altimg="si11.gif"><mml:msup><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup></mml:math>
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Modeling of Surface Damage at the Si/SiO-interface of Irradiated MOS-capacitors
No full textSurface damage caused by ionizing radiation in SiO passivated silicon
particle detectors consists mainly of the accumulation of a positively charged
layer along with trapped-oxide-charge and interface traps inside the oxide and
close to the Si/SiO-interface. High density positive interface net charge
can be detrimental to the operation of a multi-channel -on- sensor since
the inversion layer generated under the Si/SiO-interface can cause loss of
position resolution by creating a conduction channel between the electrodes. In
the investigation of the radiation-induced accumulation of oxide charge and
interface traps, a capacitance-voltage characterization study of n/-
and -irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed that
close agreement between measurement and simulation were possible when oxide
charge density was complemented by both acceptor- and donor-type deep interface
traps with densities comparable to the oxide charges. Corresponding inter-strip
resistance simulations of a -on- sensor with the tuned oxide charge
density and interface traps show close agreement with experimental results. The
beneficial impact of radiation-induced accumulation of deep interface traps on
inter-electrode isolation may be considered in the optimization of the
processing parameters of isolation implants on -on- sensors for the
extreme radiation environments.Comment: Corresponding author: T. Peltola. 24 pages, 17 figures, 6 table
Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021
No full textInternational audienceFive contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material
Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021
No full textInternational audienceFive contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material
Evidence for Electroweak Production of W(+/-)W(+/-)jj in pp Collisions at root s=8 TeV with the ATLAS Detector
No full textFurther distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.This Letter presents the first study of W±W±jj, same-electric-charge diboson production in association with two jets, using 20.3 fb-1 of proton-proton collision data at √s=8 TeV recorded by the ATLAS detector at the Large Hadron Collider. Events with two reconstructed same-charge leptons (e±e±, e±μ±, and μ±μ±) and two or more jets are analyzed. Production cross sections are measured in two fiducial regions, with different sensitivities to the electroweak and strong production mechanisms. First evidence for W±W±jj production and electroweak-only W±W±jj production is observed with a significance of 4.5 and 3.6 standard deviations, respectively. The measured production cross sections are in agreement with standard model predictions. Limits at 95% confidence level are set on anomalous quartic gauge couplings
Search for high-mass new phenomena in the dilepton final state using proton-proton collisions at root s=13 TeV with the ATLAS detector
No full textA search is conducted for both resonant and non-resonant high-mass new phenomena in dielectron and dimuon final states. The search uses 3.2 fb(-1) of proton-proton collision data, collected at root s = 13 TeV by the ATLAS experiment at the LHC in 2015. The dilepton invariant mass is used as the discriminating variable. No significant deviation from the Standard Model prediction is observed; therefore limits are set on the signal model parameters of interest at 95% credibility level. Upper limits are set on the cross-section times branching ratio for resonances decaying to dileptons, and the limits are converted into lower limits on the resonance mass, ranging between 2.74 TeV and 3.36 TeV, depending on the model. Lower limits on the llqq contact interaction scale are set between 16.7 TeV and 25.2 TeV, also depending on the model. (C) 2016 The Author. Published by Elsevier B.V
RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades
No full textThe Phase 2 upgrades of silicon pixel detectors at HL-LHC experiments feature extreme requirements, such as: 50x50 μm pixels, high rate (3 GHz/cm2), unprecedented radiation levels (1 Grad), high readout speed and serial powering. As a consequence a new readout chip is required. In this framework the RD53 collaboration submitted RD53A, a large scale chip demonstrator designed in 65 nm CMOS technology, integrating a matrix of 400×192 pixels. It features design variations in the analog and digital pixel matrix for testing purposes. An overview of the building blocks will be given together with test results on single chips
