499 research outputs found
Diffuse scattering in Ih ice
No full textSingle crystals of ice Ih, extracted from the subglacial Lake Vostok accretion ice layer (3621 m depth) were investigated by means of diffuse x-ray scattering and inelastic x-ray scattering. The diffuse scattering was identified as mainly inelastic and rationalized in the frame of ab initio calculations for the ordered ice XI approximant. Together with Monte-Carlo modelling, our data allowed reconsidering previously available neutron diffuse scattering data of heavy ice as the sum of thermal diffuse scattering and static disorder contribution. © 2014 IOP Publishing Ltd
Комплексная психофармокотерапия дисморфных болевых ощущений у подростков с психическими расстройствами = Integrated psychopharmacotherapy dismorfing pain in adolescents with psychiatric disorders
No full textChernyshov O. V. Комплексная психофармокотерапия дисморфных болевых ощущений у подростков с психическими расстройствами = Integrated psychopharmacotherapy dismorfing pain in adolescents with psychiatric disorders. Journal of Education, Health and Sport. 2015;5(8):210-218. ISSN 2391-8306. DOI 10.5281/zenodo.28073
http://dx.doi.org/10.5281/zenodo.28073
http://ojs.ukw.edu.pl/index.php/johs/article/view/2015%3B5%288%29%3A210-218
https://pbn.nauka.gov.pl/works/607755
Formerly Journal of Health Sciences. ISSN 1429-9623 / 2300-665X. Archives 2011–2014 http://journal.rsw.edu.pl/index.php/JHS/issue/archive
Deklaracja.
Specyfika i zawartość merytoryczna czasopisma nie ulega zmianie.
Zgodnie z informacją MNiSW z dnia 2 czerwca 2014 r., że w roku 2014 nie będzie przeprowadzana ocena czasopism naukowych; czasopismo o zmienionym tytule otrzymuje tyle samo punktów co na wykazie czasopism naukowych z dnia 31 grudnia 2014 r.
The journal has had 5 points in Ministry of Science and Higher Education of Poland parametric evaluation. Part B item 1089. (31.12.2014).
© The Author (s) 2015;
This article is published with open access at Licensee Open Journal Systems of Kazimierz Wielki University in Bydgoszcz, Poland and Radom University in Radom, Poland
Open Access. This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium,
provided the original author(s) and source are credited. This is an open access article licensed under the terms of the Creative Commons Attribution Non Commercial License
(http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted, non commercial use, distribution and reproduction in any medium, provided the work is properly cited.
This is an open access article licensed under the terms of the Creative Commons Attribution Non Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted, non commercial
use, distribution and reproduction in any medium, provided the work is properly cited.
The authors declare that there is no conflict of interests regarding the publication of this paper.
Received: 05.06.2015. Revised 15.07.2015. Accepted: 12.08.2015.
УДК 616.89:612.017.1
КОМПЛЕКСНАЯ ПСИХОФАРМОКОТЕРАПИЯ ДИСМОРФНЫХ БОЛЕВЫХ ОЩУЩЕНИЙ У ПОДРОСТКОВ С ПСИХИЧЕСКИМИ РАССТРОЙСТВАМИ
INTEGRATED PSYCHOPHARMACOTHERAPY DISMORFING PAIN
IN ADOLESCENTS WITH PSYCHIATRIC DISORDERS
О. В. Чернышов
O. V. Chernyshov
Николаевская областная психиатрическая больница №1
Mykolaiv Regional Psychiatric Hospital № 1
Summary
This article presents the theoretical generalization and the new decision of an actual problem of modern psychiatry - the improvement of the treatment of adolescents with dismorfic painful disorders in the structure of mental disorders by implementing a comprehensive program of pharmacotherapy and psychotherapy, developed on the basis of socio-demographic, clinical, psychopathological, pathopsychological characteristics of patients research.
Key words: complex psychopharmacotherapy, psychotherapy, dismorfing pain, mental disorders, adolescents.
Резюме
В данной статье приведены теоретические обобщения и новое решение актуальной задачи современной психиатрии – усовершенствование системы лечения подростков с дисморфными болевыми ощущениями в структуре психических расстройств, путем внедрения программы комплексной психофармакотерапии и психотерапии, разработанной на основании исследования социально-демографических, клинико-психопатологических и патопсихологических характеристик пациентов.
Ключевые слова: комплексная психофармакотерапия, психотерапия, дисморфные болевые ощущения, психические расстройства, подростки
Supplemental_Material – Supplemental material for Autogenic and allogenic factors affecting development of a floating Sphagnum-dominated peat mat in a karst pond basin
No full textSupplemental material, Supplemental_Material for Autogenic and allogenic factors affecting development of a floating Sphagnum-dominated peat mat in a karst pond basin by Andrey N Tsyganov, Dmitry A Kupriyanov, Kirill V Babeshko, Tamara V Borisova, Viktor A Chernyshov, Elena M Volkova, Daria A Chekova, Yuri A Mazei and Elena Yu Novenko in The Holocene</p
Semiconductors V. 35, I. 07
No full textSemiconductors -- July 2001
Volume 35, Issue 7, pp. 735-859
REVIEWS
Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles
V. A. Kozlov and V. V. Kozlovski
pp. 735-761 Full Text: PDF (280 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
The Microstructure and Physical Properties of Thin SnO2 Films
S. I. Rembeza, T. V. Svistova, E. S. Rembeza, and O. I. Borsyakova
pp. 762-765 Full Text: PDF (233 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Accuracy of Reconstructing the Semiconductor Doping Profile from Capacitance–Voltage Characteristics Measured during Electrochemical Etching
I. R. Karetnikova, I. M. Nefedov, and V. I. Shashkin
pp. 766-772 Full Text: PDF (83 kB)
Optical Properties of Cd1 – xZnxTe (0 < x < 0.1) Single Crystals in the Infrared Spectral Region
A. I. Belogorokhov, V. M. Lakeenkov[dagger], and L. I. Belogorokhova
pp. 773-776 Full Text: PDF (54 kB)
Metallic Conductivity over an Acceptor Band of Lightly Compensated Copper-Doped p-Hg0.78Cd0.22Te Crystals
V. V. Bogoboyashchii
pp. 777-783 Full Text: PDF (93 kB)
Fermi Level Pinning and Electrical Properties of Irradiated CdxHg1 – xTe Alloys
V. N. Brudnyi and S. N. Grinyaev
pp. 784-787 Full Text: PDF (55 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Effect of Ballistic Electron Transport in Metal–n-GaAs–n+-GaAs Schottky-Barrier Structures
N. A. Torkhov
pp. 788-795 Full Text: PDF (102 kB)
Calculation of the Variation in the Work Function Caused by Adsorption of Metal Atoms on Semiconductors
S. Yu. Davydov and A. V. Pavlyk
pp. 796-799 Full Text: PDF (45 kB)
Charge Transport in HgCdTe-based n+–p Photodiodes
J. V. Gumenjuk-Sichevskaja, F. F. Sizov, V. N. Ovsyuk, V. V. Vasil'ev, and D. G. Esaev
pp. 800-806 Full Text: PDF (96 kB)
LOW-DIMENSIONAL SYSTEMS
Electronic State Mixing in Xx and Xy Valleys in AlAs/GaAs (001)
G. F. Karavaev and V. N. Chernyshov
pp. 807-815 Full Text: PDF (110 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Adsorption-based Porosimetry Using Capacitance Measurements
E. A. Tutov, A. Yu. Andryukov, and E. N. Bormontov
pp. 816-820 Full Text: PDF (53 kB)
Structural Transformations and Silicon Nanocrystallite Formation in SiOx Films
V. Ya. Bratus', V. A. Yukhimchuk, L. I. Berezhinsky, M. Ya. Valakh, I. P. Vorona, I. Z. Indutnyi, T. T. Petrenko, P. E. Shepeliavyi, and I. B. Yanchuk
pp. 821-826 Full Text: PDF (96 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Luminescence Spectra and Efficiency of GaN-based Quantum-Well Heterostructure Light Emitting Diodes: Current and Voltage Dependence
V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin
pp. 827-834 Full Text: PDF (133 kB)
Interaction of Metal Nanoparticles with a Semiconductor in Surface-Doped Gas Sensors
S. V. Ryabtsev, E. A. Tutov, E. N. Bormontov, A. V. Shaposhnik, and A. V. Ivanov
pp. 835-839 Full Text: PDF (59 kB)
Cross-Sectional Electrostatic Force Microscopy of Semiconductor Laser Diodes
A. V. Ankudinov, E. Yu. Kotel'nikov, A. A. Kantsel'son, V. P. Evtikhiev, and A. N. Titkov
pp. 840-846 Full Text: PDF (371 kB)
Comparative Analysis of Long-Wavelength (1.3 µm) VCSELs on GaAs Substrates
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, and Zh. I. Alferov
pp. 847-853 Full Text: PDF (91 kB)
1.3 µm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
A. V. Sakharov, I. L. Krestnikov, N. A. Maleev, A. R. Kovsh, A. E. Zhukov, A. F. Tsatsul'nikov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, J. A. Lott, and Zh. I. Alferov
pp. 854-859 Full Text: PDF (97 kB)Archived web conten
Doklady Physics V.46, I.09
No full textDoklady Physics -- September 2001
Volume 46, Issue 9, pp. 609-686
PHYSICS
A Generalized Kargin–Slonimskii–Rouse Model for Oligomeric Chains
V. I. Irzhak
pp. 609-611 Full Text: PDF (44 kB)
Flicker-Noise in a Jet of Superheated Liquid
A. V. Reshetnikov, N. A. Mazheiko, V. P. Koverda, V. N. Skokov, V. P. Skripov, and A. A. Uimin
pp. 612-614 Full Text: PDF (56 kB)
The Polarization of a Radio-Frequency Electromagnetic Field in Lanthanum Manganite
V. V. Ustinov, A. P. Nosov, A. B. Rinkevich, and V. G. Vasil'ev
pp. 615-618 Full Text: PDF (62 kB)
A Model of Transverse Flame Propagation in Alternating Layers of Combustible and Inert Solid Substances
A. G. Merzhanov, P. M. Krishenik, and K. G. Shkadinskii
pp. 619-623 Full Text: PDF (88 kB)
Ecton Mechanism for the Generation of Ion Flows in a Vacuum Arc
G. A. Mesyats and S. A. Barengolts
pp. 624-626 Full Text: PDF (37 kB)
Low-Temperature Initiation of the Detonation Combustion of Gas Mixtures in a Supersonic Flow under Excitation of the O2(a1Deltag) State of Molecular Oxygen
A. M. Starik and N. S. Titova
pp. 627-632 Full Text: PDF (108 kB)
TECHNICAL PHYSICS
A Paradox of Severe Plastic Deformation in Metals
R. Z. Valiev and I. V. Aleksandrov
pp. 633-635 Full Text: PDF (293 kB)
The Problem of Surface-Wave Localization by a Thin Anisotropic Layer
V. A. Babeshko and V. V. Buzhan
pp. 636-641 Full Text: PDF (77 kB)
Algorithms of Robust Image Filtering with the Preservation of Fine Details in the Presence of Noise
V. F. Kravchenko, V. I. Ponomarev, and V. I. Pustovoit
pp. 642-646 Full Text: PDF (230 kB)
The Synthesis of Signal-Correcting Systems for Antennas of Ultrashort Pulses
L. D. Bakhrakh and M. Ya. Izrailovich
pp. 647-650 Full Text: PDF (50 kB)
Formation of a Two-Phase Zone in the Course of Rapid Solidification of Refractory Oxides
A. Yu. Vorobyev, V. A. Petrov, V. E. Titov, and V. E. Fortov
pp. 651-653 Full Text: PDF (40 kB)
MECHANICS
Schemes of the Krylov–Bogolyubov Averaging Method for the Highest Powers
L. D. Akulenko
pp. 654-658 Full Text: PDF (71 kB)
An Analog of the Centered Riemann Wave in Heat-Conducting Inviscid Gas
S. P. Bautin and Yu. Yu. Chernyshov
pp. 659-662 Full Text: PDF (57 kB)
Kinematics and Mass Geometry for a Solid Body with a Fixed Point in [openface R]n
D. V. Georgievskii and M. V. Shamolin
pp. 663-666 Full Text: PDF (69 kB)
Generation of Periodic Internal Waves by an Oscillating Strip of Finite Width
Yu. V. Kistovich and Yu. D. Chashechkin
pp. 667-671 Full Text: PDF (63 kB)
A Unique Criterion for the Fatigue Fracture of Metallic Materials
A. N. Romanov
pp. 672-674 Full Text: PDF (51 kB)
Direct and Inverse Poynting Effects in Elastic Cylinders
L. M. Zubov
pp. 675-677 Full Text: PDF (44 kB)
Nonexponential Atmosphere and Noncanonical Probability Distributions
V. V. Kozlov
pp. 678-680 Full Text: PDF (44 kB)
An Explicit Solution to the Mixed Problem of Stationary Incoherent Thermoelasticity for a Truncated Circular Hollow Cone
G. Ya. Popov
pp. 681-686 Full Text: PDF (79 kB)Archived web conten
Semiconductors V. 36, I. 05
No full textleave(s) : ill; 28 cm.Semiconductors -- May 2002
Volume 36, Issue 5, pp. 481-604
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Nonlinear Photoluminescence of Graded-Gap AlxGa1 ��� xAs Solid Solutions
V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov
pp. 481-486 Full Text: PDF (102 kB)
Features of Determination of Shallow-Level Impurity Concentrations in Semiconductors from Analysis of the Exciton Luminescence Spectrum
K. D. Glinchuk and A. V. Prokhorovich
pp. 487-492 Full Text: PDF (91 kB)
Deep Level Spectra of MBE-Grown ZnTe:Cr2+ Layers
Yu. G. Sadofyev and M. V. Korshkov
pp. 493-495 Full Text: PDF (42 kB)
Band Structure of Mg2Si and Mg2Ge Semiconducting Compounds with a Strained Crystal Lattice
A. V. Krivosheeva, A. N. Kholod, V. L. Shaposhnikov, A. E. Krivosheev, and V. E. Borisenko
pp. 496-500 Full Text: PDF (81 kB)
Localized States in Hg3In2Te6: Cr Compounds
P. N. Gorlei, O. G. Grushka, and V. M. Frasunyak
pp. 501-504 Full Text: PDF (65 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Control of Charge Transport Mode in the Schottky Barrier by delta-Doping: Calculation and Experiment for Al/GaAs
V. I. Shashkin, A. V. Murel, V. M. Daniltsev, and O. I. Khrykin
pp. 505-510 Full Text: PDF (92 kB)
LOW-DIMENSIONAL SYSTEMS
Electrons, Holes, and Excitons in a Superlattice Composed of Cylindrical Quantum Dots with Extremely Weak Coupling between Quasiparticles in Neighboring Layers of Quantum Dots
N. V. Tkach, A. M. Makhanets, and G. G. Zegrya
pp. 511-518 Full Text: PDF (105 kB)
Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge1 ��� xSix Heterostructures in the Quantum Hall Effect Mode
Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, and M. V. Yakunin
pp. 519-526 Full Text: PDF (126 kB)
Miniband Spectra of (AlAs)M(GaAs)N(111) Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov
pp. 527-534 Full Text: PDF (94 kB)
Room Temperature lambda = 1.3 ��m Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate
T. M. Burbaev, I. P. Kazakov, V. A. Kurbatov, M. M. Rzaev, V. A. Tsvetkov, and V. I. Tsekhosh
pp. 535-538 Full Text: PDF (172 kB)
Resonance Tunneling and Nonlinear Current in Heterobarriers with Complex Law of Carrier Dispersion
C. S. Kim, A. M. Satanin, and V. B. Shtenberg
pp. 539-545 Full Text: PDF (94 kB)
Multichannel Carrier Scattering at Quantum-Well Heterostructures
V. I. Galiev, A. N. Kruglov, A. F. Polupanov, E. M. Goldys, and T. L. Tansley
pp. 546-551 Full Text: PDF (83 kB)
Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells
I. A. Karpovich, S. V. Tikhov, E. L. Shobolov, and B. N. Zvonkov
pp. 552-557 Full Text: PDF (72 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Interrelation of Surface Relief of Porous Silicon with Specific Features of Raman Spectra
B. M. Bulakh, B. R. Jumayev, N. O. Korsunska, O. S. Litvin, T. V. Torchynska, L. Yu. Khomenkova, and V. O. Yukhymchuk
pp. 558-563 Full Text: PDF (259 kB)
Formation of Macropore Nucleation Centers in Silicon by Ion Implantation
E. V. Astrova and T. N. Vasunkina
pp. 564-567 Full Text: PDF (402 kB)
X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation
V. R. Galakhov, I. V. Antonova, S. N. Shamin, V. I. Aksenova, V. I. Obodnikov, A. K. Gutakovskii, and V. P. Popov
pp. 568-573 Full Text: PDF (136 kB)
Preparation and Study of Carbidized Porous Silicon
O. M. Sreseli, D. N. Goryachev, V. Yu. Osipov, L. V. Belyakov, S. P. Vul', I. T. Serenkov, V. I. Sakharov, and A. Ya. Vul'
pp. 574-580 Full Text: PDF (122 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Shallow p���n Junctions Formed in Silicon Using Pulsed Photon Annealing
S. T. Sisianu, T. S. Sisianu, and S. K. Railean
pp. 581-587 Full Text: PDF (86 kB)
Simulation of Avalanche Multiplication of Electrons in Photodetectors with Blocked Hopping Conduction
S. P. Sinitsa
pp. 588-591 Full Text: PDF (60 kB)
Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Tsivish, and Yu. P. Yakovlev
pp. 592-598 Full Text: PDF (84 kB)
Generation of Microwave Oscillations in a No-Base Diode
S. A. Darznek, S. K. Lyubutin, S. N. Rukin, and B. G. Slovikovskii
pp. 599-604 Full Text: PDF (111 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 37, I. 04
No full textSemiconductors -- April 2003
Volume 37, Issue 4, pp. 367-492
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Structural Disordering and Viedemann–Franz Relation in Melts of Some II–IV–V2 Semiconductors
Ya. B. Magomedov and M. A. Aidamirov
pp. 367-369 Full Text: PDF (42 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters of a Semiconductor–Metal Phase Transition
V. A. Klimov, I. O. Timofeeva, S. D. Khanin, E. B. Shadrin, A. V. Il'inskii, and F. Silva-Andrade
pp. 370-374 Full Text: PDF (165 kB)
Recombination Current Instability in Epitaxial p+–n Structures with Impurity Atoms Locally Incorporated into the n-type Region and Determination of the Deep Center Parameters
B. S. Muravskii[dagger], O. N. Kulikov, and V. N. Chernyi
pp. 375-379 Full Text: PDF (73 kB)
Optical Reflection in (Pb0.78Sn0.22)1 – xInxTe Solid Solutions with a High Indium Content
A. N. Veis and A. V. Nashchekin
pp. 380-383 Full Text: PDF (226 kB)
Effect of Lattice Deformation on Semiconducting Properties of CrSi2
A. V. Krivosheeva, V. L. Shaposhnikov, A. E. Krivosheev, A. B. Filonov, and V. E. Borisenko
pp. 384-389 Full Text: PDF (109 kB)
Electrical Properties of InAs Irradiated with Protons
V. N. Brudnyi, N. G. Kolin, and A. I. Potapov
pp. 390-395 Full Text: PDF (107 kB)
Influence of Pulsed Laser Radiation on the Morphology and Photoelectric Properties of InSb Crystals
V. A. Gnatyuk and O. S. Gorodnychenko
pp. 396-398 Full Text: PDF (87 kB)
IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon
E. V. Astrova, T. S. Perova, V. A. Tolmachev, A. D. Remenyuk, J. Vij, and A. Moore
pp. 399-403 Full Text: PDF (128 kB)
Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon
V. V. Lukjanitsa
pp. 404-413 Full Text: PDF (126 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structures Based on ZnIn2Se4 Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 414-416 Full Text: PDF (48 kB)
Special Features of Electron Scattering at AlxGa1 – xAs/AlAs(001) Interfaces
S. N. Grinyaev, G. F. Karavaev, and V. N. Chernyshov
pp. 417-425 Full Text: PDF (117 kB)
The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons
D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova
pp. 426-432 Full Text: PDF (92 kB)
The Effect of Internal Fields on Tunneling Current in Strained GaN/AlxGa1 – xN(0001) Structures
S. N. Grinyaev and A. N. Razzhuvalov
pp. 433-438 Full Text: PDF (81 kB)
Characteristics of Gallium Arsenide Structures and Gunn Devices Based on Them Fabricated Using the Radiation–Thermal Technology
M. V. Ardyshev and V. M. Ardyshev
pp. 439-442 Full Text: PDF (54 kB)
The Influence of Carbon on the Properties of Si/SiGe Heterostructures
M. Ya. Valakh, V. N. Dzhagan, L. A. Matveeva, A. S. Oberemok, B. N. Romanyuk, and V. A. Yukhimchuk
pp. 443-447 Full Text: PDF (69 kB)
Effect of Irradiation with Low-Energy Ar Ions on the Characteristics of the Working and Rear Sides of Single-Crystal GaAs Substrate
A. S. Alalykin, P. N. Krylov, I. V. Fedotova, and A. B. Fedotov
pp. 448-451 Full Text: PDF (56 kB)
Generation–Recombination Centers in CdTe:V
L. A. Kosyachenko, S. Yu. Paranchich, Yu. V. Tanasyuk, V. M. Sklyarchuk, E. F. Sklyarchuk, E. L. Maslyanchuk, and V. V. Motushchuk
pp. 452-455 Full Text: PDF (72 kB)
Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes
V. L. Litvinov, K. D. Demakov, O. A. Ageev, A. M. Svetlichny, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, and V. V. Milenin
pp. 456-461 Full Text: PDF (235 kB)
LOW-DIMENSIONAL SYSTEMS
Properties of Ge Nanocrystals Formed by Implantation of Ge+ Ions into SiO2 Films with Subsequent Annealing under Hydrostatic Pressure
I. E. Tyschenko, A. B. Talochkin, A. G. Cherkov, K. S. Zhuravlev, A. Misiuk, M. Voelskow, and W. Skorupa
pp. 462-467 Full Text: PDF (93 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Laser Ultrasonic Study of Porous Silicon Layers
S. M. Zharkii, A. A. Karabutov, I. M. Pelivanov, N. B. Podymova, and V. Yu. Timoshenko
pp. 468-472 Full Text: PDF (72 kB)
Raman Spectroscopy of Amorphous Carbon Modified with Iron
S. G. Yastrebov, V. I. Ivanov-Omskii, F. Dumitrache, and C. Morosanu
pp. 473-476 Full Text: PDF (52 kB)
Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli
pp. 477-481 Full Text: PDF (60 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates
A. A. Lebedev, A. M. Strel'chuk, D. V. Davydov, N. S. Savkina, A. S. Tregubova, A. N. Kuznetsov, V. A. Solov'ev, and N. K. Poletaev
pp. 482-484 Full Text: PDF (53 kB)
Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-µm Range
A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov, N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev, D. A. Yarekha, and Yu. P. Yakovlev
pp. 485-490 Full Text: PDF (80 kB)
PERSONALIA
Vladimir Ivanovich Ivanov-Omskii (dedicated to his 70th birthday)
pp. 491-492 Full Text: PDF (73 kB)Archived web conten
Semiconductors V. 36, I. 05
No full textSemiconductors -- May 2002
Volume 36, Issue 5, pp. 481-604
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Nonlinear Photoluminescence of Graded-Gap AlxGa1 – xAs Solid Solutions
V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov
pp. 481-486 Full Text: PDF (102 kB)
Features of Determination of Shallow-Level Impurity Concentrations in Semiconductors from Analysis of the Exciton Luminescence Spectrum
K. D. Glinchuk and A. V. Prokhorovich
pp. 487-492 Full Text: PDF (91 kB)
Deep Level Spectra of MBE-Grown ZnTe:Cr2+ Layers
Yu. G. Sadofyev and M. V. Korshkov
pp. 493-495 Full Text: PDF (42 kB)
Band Structure of Mg2Si and Mg2Ge Semiconducting Compounds with a Strained Crystal Lattice
A. V. Krivosheeva, A. N. Kholod, V. L. Shaposhnikov, A. E. Krivosheev, and V. E. Borisenko
pp. 496-500 Full Text: PDF (81 kB)
Localized States in Hg3In2Te6: Cr Compounds
P. N. Gorlei, O. G. Grushka, and V. M. Frasunyak
pp. 501-504 Full Text: PDF (65 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Control of Charge Transport Mode in the Schottky Barrier by delta-Doping: Calculation and Experiment for Al/GaAs
V. I. Shashkin, A. V. Murel, V. M. Daniltsev, and O. I. Khrykin
pp. 505-510 Full Text: PDF (92 kB)
LOW-DIMENSIONAL SYSTEMS
Electrons, Holes, and Excitons in a Superlattice Composed of Cylindrical Quantum Dots with Extremely Weak Coupling between Quasiparticles in Neighboring Layers of Quantum Dots
N. V. Tkach, A. M. Makhanets, and G. G. Zegrya
pp. 511-518 Full Text: PDF (105 kB)
Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge1 – xSix Heterostructures in the Quantum Hall Effect Mode
Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, and M. V. Yakunin
pp. 519-526 Full Text: PDF (126 kB)
Miniband Spectra of (AlAs)M(GaAs)N(111) Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov
pp. 527-534 Full Text: PDF (94 kB)
Room Temperature lambda = 1.3 µm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate
T. M. Burbaev, I. P. Kazakov, V. A. Kurbatov, M. M. Rzaev, V. A. Tsvetkov, and V. I. Tsekhosh
pp. 535-538 Full Text: PDF (172 kB)
Resonance Tunneling and Nonlinear Current in Heterobarriers with Complex Law of Carrier Dispersion
C. S. Kim, A. M. Satanin, and V. B. Shtenberg
pp. 539-545 Full Text: PDF (94 kB)
Multichannel Carrier Scattering at Quantum-Well Heterostructures
V. I. Galiev, A. N. Kruglov, A. F. Polupanov, E. M. Goldys, and T. L. Tansley
pp. 546-551 Full Text: PDF (83 kB)
Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells
I. A. Karpovich, S. V. Tikhov, E. L. Shobolov, and B. N. Zvonkov
pp. 552-557 Full Text: PDF (72 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Interrelation of Surface Relief of Porous Silicon with Specific Features of Raman Spectra
B. M. Bulakh, B. R. Jumayev, N. O. Korsunska, O. S. Litvin, T. V. Torchynska, L. Yu. Khomenkova, and V. O. Yukhymchuk
pp. 558-563 Full Text: PDF (259 kB)
Formation of Macropore Nucleation Centers in Silicon by Ion Implantation
E. V. Astrova and T. N. Vasunkina
pp. 564-567 Full Text: PDF (402 kB)
X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation
V. R. Galakhov, I. V. Antonova, S. N. Shamin, V. I. Aksenova, V. I. Obodnikov, A. K. Gutakovskii, and V. P. Popov
pp. 568-573 Full Text: PDF (136 kB)
Preparation and Study of Carbidized Porous Silicon
O. M. Sreseli, D. N. Goryachev, V. Yu. Osipov, L. V. Belyakov, S. P. Vul', I. T. Serenkov, V. I. Sakharov, and A. Ya. Vul'
pp. 574-580 Full Text: PDF (122 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Shallow p–n Junctions Formed in Silicon Using Pulsed Photon Annealing
S. T. Sisianu, T. S. Sisianu, and S. K. Railean
pp. 581-587 Full Text: PDF (86 kB)
Simulation of Avalanche Multiplication of Electrons in Photodetectors with Blocked Hopping Conduction
S. P. Sinitsa
pp. 588-591 Full Text: PDF (60 kB)
Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Tsivish, and Yu. P. Yakovlev
pp. 592-598 Full Text: PDF (84 kB)
Generation of Microwave Oscillations in a No-Base Diode
S. A. Darznek, S. K. Lyubutin, S. N. Rukin, and B. G. Slovikovskii
pp. 599-604 Full Text: PDF (111 kB)Archived web conten
Semiconductors V. 33, I. 08
No full textdc.description[en_US]Semiconductors -- August 1999
Volume 33, Issue 8, pp. 821-932
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation
M. Yu. Barabanenkov, A. V. Leonov, V. N. Mordkovich, and N. M. Omelyanovskaya
Full Text: PDF (36 kB)
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, S. V. Subach, M. P. Yakubenya, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin, and V. V. Chaldyshev
Full Text: PDF (540 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Band-edge photoluminescence of heavily doped InxGa1 ��� xAs1 ��� yPy (lambda = 1.2 ��m)
M. V. Karachevtseva, V. A. Strakhov, and N. G. Yaremenko
Full Text: PDF (83 kB)
Determining the position of antimony impurity atoms in PbS by 119Sb(119mSn) emission M�_ssbauer spectroscopy
V. F. Masterov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, A. V. Ermolaev, and S. I. Bondarevskii
Full Text: PDF (35 kB)
Intrinsic photoconductivity of copper-doped gallium phosphide
N. N. Pribylov, V. A. Buslov, S. I. Rembeza, A. I. Spirin, and S. A. Sushkov
Full Text: PDF (68 kB)
Determining the energy levels of elementary primary defects in silicon
V. V. Luk'yanitsa
Full Text: PDF (47 kB)
The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals
Z. V. Basheleishvili and T. A. Pagava
Full Text: PDF (32 kB)
Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
Full Text: PDF (47 kB)
Avalanche light-emitting diodes operating at room temperature based on single-crystal Si : Ho : O
N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev
Full Text: PDF (32 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary
E. I. Goldman, A. G. Zhdan, and G. V. Chucheva
Full Text: PDF (86 kB)
Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1 ��� xAs/p-AlyGa1 ��� yAs from C ��� V measurements
V. I. Zubkov, M. A. Mel'nik, A. V. Solomonov, A. N. Pikhtin, and F. Bugge
Full Text: PDF (73 kB)
Langevin-recombination-controlled explosive kinetics of electroluminescence in organic semiconductors
V. I. Arkhipov and V. R. Nikitenko
Full Text: PDF (43 kB)
Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide
E. F. Venger, V. V. Milenin, I. B. Ermolovich, R. V. Konakova, V. N. Ivanov, and D. I. Voitsikhovskii
Full Text: PDF (373 kB)
Photosensitivity of structures produced by heat treatment of CuInSe2 in different media
V. Yu. Rud' and Yu. V. Rud'
Full Text: PDF (74 kB)
Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes
A. A. Lebedev, D. V. Davydov, V. V. Zelenin, and M. L. Korogodskii
Full Text: PDF (34 kB)
Free ion transport in the insulator layer and electron���ion exchange at an insulator���semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures
E. I. Gol'dman, A. G. Zhdan, and G. V. Chucheva
Full Text: PDF (79 kB)
LOW-DIMENSIONAL SYSTEMS
Transformation of a metal���oxide���silicon structure into a resonance-tunneling structure with quasi-zero-dimensional quantum states
G. G. Kareva
Full Text: PDF (37 kB)
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
A. F. Tsatsul'nikov, D. A. Bedarev, B. V. Volovik, S. V. Ivanov, M. V. Maksimov, Yu. G. Musikhin, N. N. Ledentsov, B. Ya. Mel'tser, V. A. Solov'ev, P. S. Kop'ev, A. Yu. Chernyshov, and M. V. Belousov
Full Text: PDF (198 kB)
Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry
S. D. Suchalkin, Yu. B. Vasil'ev, S. V. Ivanov, and P. S. Kop'ev
Full Text: PDF (42 kB)
Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands
I. L. Drichko, A. M. D'yakonov, I. Yu. Smirnov, V. V. Preobrazhenskii, and A. I. Toropov
Full Text: PDF (99 kB)
New approach to the analysis of negative magnetostriction in two-dimensional structures
G. M. Min'kov, S. A. Negashev, O. �. Rut, A. V. Germanenko, O. I. Khrykin, V. I. Shashkin, and V. M. Danil'tsev
Full Text: PDF (53 kB)
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, A. A. Suvorova, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg, and P. Werner
Full Text: PDF (254 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Pulsed breakdown of chalcogenide glass semiconductor films in a magnetic field
�. N. Voronkov
Full Text: PDF (471 kB)
Multiple bonds in hydrogen-free amorphous silicon
A. I. Mashin and A. F. Khokhlov
Full Text: PDF (179 kB)
Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II)
D. G. Esaev, S. P. Sinitsa, and E. V. Chernyavskii
Full Text: PDF (70 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval lambda = 3 ��� 5 ��m
N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
Full Text: PDF (62 kB)
Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (77 kB)
Lasing at a wavelength close to 1.3 ��m in InAs quantum-dot structures
A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maksimov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, E. Yu. Kondrat'eva, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Full Text: PDF (67 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 36, I. 06
No full textdc.description[en_US]Semiconductors -- June 2002
Volume 36, Issue 6, pp. 605-716
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Formation of Selenium-Containing Complexes in Silicon
A. A. Taskin and E. G. Tishkovskii
pp. 605-614 Full Text: PDF (114 kB)
Growth of Diamond Films on Crystalline Silicon by Hot-Filament Chemical Vapor Deposition
M. V. Baidakova, A. Ya. Vul', V. G. Golubev, S. A. Grudinkin, V. G. Melekhin, N. A. Feoktistov, and A. Kr�_ger
pp. 615-620 Full Text: PDF (255 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Local Vibrational Modes of the Oxygen���Vacancy Complex in Germanium
V. V. Litvinov, L. I. Murin, J. L. Lindstrom, V. P. Markevich, and A. N. Petukh
pp. 621-624 Full Text: PDF (61 kB)
Luminescent Si���Ge Solid Solution Layers Er-Doped in Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev, Z. F. Krasil'nik, B. Ya. Ber, Yu. N. Drozdov, and A. N. Yablonsky
pp. 625-628 Full Text: PDF (62 kB)
Migration of Laser-Induced Point Defects in IV���VI Compounds
S. V. Plyatsko
pp. 629-635 Full Text: PDF (89 kB)
Physical Properties of Semi-Insulating CdTe:Cl Single Crystals Grown from the Vapor Phase
V. D. Popovich, G. M. Grigorovich, P. M. Peleshchak, and P. N. Tkachuk
pp. 636-640 Full Text: PDF (66 kB)
Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells
A. V. Andrianov, V. Yu. Nekrasov, N. M. Shmidt, E. E. Zavarin, A. S. Usikov, N. N. Zinov'ev, and M. N. Tkachuk
pp. 641-646 Full Text: PDF (104 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Silicon Nanocrystal Formation upon Annealing of SiO2 Layers Implanted with Si Ions
G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler, A. F. Leier, and M.-O. Ruault
pp. 647-651 Full Text: PDF (74 kB)
Role of Silicon Vacancies in Formation of Schottky Barriers at Ag and Au Contacts to 3C- and 6H-SiC
S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov
pp. 652-654 Full Text: PDF (40 kB)
Measurements of Deep Trap Concentration in Diodes with a High Schottky Barrier by Deep-Level Transient Spectroscopy
E. N. Agafonov, A. N. Georgobiani, and L. S. Lepnev
pp. 655-658 Full Text: PDF (66 kB)
Simulation of the Energy Spectrum of Surface States in an MIS Structure Taking Current Leakage through the Insulator into Account
L. S. Berman
pp. 659-662 Full Text: PDF (49 kB)
LOW-DIMENSIONAL SYSTEMS
Mixed Vibrational Modes of PbTe Nanocrystallites
A. I. Belogorokhov, L. I. Belogorokhova, D. R. Khokhlov, and S. V. Lemeshko
pp. 663-669 Full Text: PDF (106 kB)
Electron States in (AlAs)M(AlxGa1 ��� xAs)N Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov
pp. 670-673 Full Text: PDF (56 kB)
Electron Mobility in a AlGaAs/GaAs/AlGaAs Quantum Well
V. G. Mokerov, G. B. Galiev, J. Pozela, K. Pozela, and V. Juciene
pp. 674-678 Full Text: PDF (57 kB)
Resonance Transfer of Charge Carriers in Si/CaF2 Periodic Nanostructures via Trap States in Insulator Layers
Yu. A. Berashevich, A. L. Danilyuk, and V. E. Borisenko
pp. 679-684 Full Text: PDF (71 kB)
Inversion of the Electron Population in Subbands of Dimensional Quantization with Longitudinal Transport in Tunnel-Coupled Quantum Wells
V. Ya. Aleshkin and A. A. Dubinov
pp. 685-690 Full Text: PDF (72 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Photoconductivity of Nanostructured Hydrogenated Silicon Films
O. A. Golikova
pp. 691-694 Full Text: PDF (53 kB)
Vibratonal Spectroscopy of a-C:H(Co)
T. K. Zvonareva, E. I. Ivanova, G. S. Frolova, V. M. Lebedev, and V. I. Ivanov-Omskii
pp. 695-700 Full Text: PDF (93 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Spontaneous and Stimulated Emission from Magnetron-Deposited ZnO���SiO2���Si Thin-Film Nanocavities
A. N. Gruzintsev, V. T. Volkov, C. Barthou, and P. Benalloul
pp. 701-705 Full Text: PDF (61 kB)
Photoelectric Properties of p+���n Junctions Based on 4H-SiC Ion-Implanted with Aluminum
G. N. Violina, E. V. Kalinina, G. F. Kholujanov, G. A. Onushkin, V. G. Kossov, R. R. Yafaev, A. Hall�n, and A. O. Konstantinov
pp. 706-709 Full Text: PDF (55 kB)
Silicon Carbide Detectors of High-Energy Particles
G. N. Violina, E. V. Kalinina, G. F. Kholujanov, V. G. Kossov, R. R. Yafaev, A. Hall�n, and A. O. Konstantinov
pp. 710-713 Full Text: PDF (53 kB)
Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 ��m
N. Yu. Gordeev, L. Ya. Karachinsky, I. I. Novikov, A. V. Lyutetsky, N. A. Pikhtin, N. V. Fetisova, I. S. Tarasov, and P. S. Kop'ev
pp. 714-716 Full Text: PDF (46 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
- …
