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Tecniche IR e scanning laser
No full textThis paper contains a tutorial on optical techniques for the characterization and failure analysis of electron devices and integrated circuit
Correlation between latch-up hysteresis and window effects in commercial CMOS IC's by means of IR microscopy and scanning laser microscopy
No full textThe presence of multiple parasitic paths for latch-up triggering in a CMOS integrated circuit gives rise to hysteresis effects in the latch-up I-V characteristics and to "window" effects in the latch-up dynamic threshold. These effects can be explained by identifying active latch-up paths by means of infrared emission microscop
Tecniche analitiche per lo studio del latch-up nei circuiti integrati CMOS
No full textThis paper reviews microscopy techniques which allow one to identify parasitic paths responsible for latch-up triggering in CMOS integrated circuit
Correlation Between Anomalous Latch-up I/v Characteristics and Observation of Current Distribution By Ir Microscopy In Cmos Ics
No full textIR microscopy allows the correlation of anomalous latch-up electrical characteristics with current distribution in CMOS ICs, showing that anomalous behaviour is due to the competition of different pnpn paths and consequent current redistribution
Detection and localization of gate oxide shorts in NMOS transistors by optical beam induced current
No full textPolysilicon gate high voltage MOS transistors have been submitted to electrical overstress and ESD. By mapping the optical beam induced current (OBIC) in a scanning laser system, shorts created under the device gate can be identified and correlated with electrical measurement
The dependence of latch-up sensitivity on layout and technology features, as analyzed by electrical measurements, HFIELDS and SPICE simulations, and infrared microscopy characterization
No full textThe influence of different layout parameters and of temperature on latch-up susceptibility has been studied on standard four-stripes test structures made using different processes: a standard n-well, a twin-tub and an epitaxial technology. Triggering characteristics of structures without guard rings can be fairly accurately predicted by two-dimensional simulations, performed by HFIELDS. Hysteresis effects in the holding characteristics are due to an uneven distribution of latch-up current within the structures, which has been detected by IR microscopy. Similar current redistribution effects can cause anomalies during pulsed measurements on CMOS integrated circuits. Three-diemsnional effects can be emulated by SPICE simulations
Infrared Microscopy Study of Anomalous Latchup Characteristics Due To Current Redistribution In Different Parasitic Paths
No full textAnomalous effects such as abrupt variations of the latchup current in steady-state conditions and window effects, i.e. the existence of a well-defined interval of I/O injected currents for latchup to occur, can occur during pulsed latchup tests. Infrared microscopy allows the correlation of electrical characteristics with latchup current distribution and reveals that anomalous effects are due to the dynamic competition between different latchup paths. This is confirmed by a SPICE simulation of the lumped equivalent circuit of a CMOS output comprising two coupled p-n-p-n parasitic structure
Characterization of Anomalous Latch-up Effects By Means of Infrared Microscopy and Spice Simulation
No full textAnomalous effects have been evidentiated during pulsed I/O overvoltage tests, such as "window effects", i.e. disappearing of the latch-up condition for high I/O injected current. Infrared microscopy observation reveals that anomalous effects are due to the dynamic redistribution of supply current between different latch-up paths. This analysis is confirmed by the SPICE simulation of the lumped equivalent circuit of a CMOS output comprising two coupled pnpn parasitic structures
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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