1,721,006 research outputs found
Molecular Level Investigation of the Film Structure of a High Electron Mobility Copolymer via Vibrational Spectroscopy
Vibrational spectroscopy is adopted to investigate
the film structure of poly{[N,N′-bis(2-octyldodecyl)-
naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-
bithiophene)} (P(NDI2OD-T2)) at the molecular level. Both
Raman and IR spectra are measured for P(NDI2OD-T2)
solutions and films. A good match with density functional
theory (DFT) calculations at the B3LYP/6-311G** level is
obtained, so that the main spectral features could be assigned.
No significant spectral shifts are recorded when passing from
very diluted solutions to the solid state, while clear variations
in the relative intensity of specific spectral markers are
observed. The comparison of the spectral patterns shown by
IR spectra recorded with reflection−absorption IR spectroscopy (RAIRS) and in normal transmission experiments allows to
derive a structural model of the polymer. In as-cast films, or in films subjected to mild thermal treatments, below the melting
point, the backbone of the polymer chains lies preferentially in the substrate plane, with the T2 units lying flat parallel to the
substrate and the NDI2OD unit featuring a dihedral angle θ with the T2 unit (θ ≈ 38°). This structure and polymer orientation
is consistent with reported good bulk electron mobility in vertical diodes structures and high field-effect mobility in lateral field effect transistors. Furthermore, we observe that upon a melt-annealing treatment, a clear modification of the RAIRS spectrum occurs suggesting either a loss of the preferential orientational order of the film or a flip of some domains featuring the polymer segments tilted out of the substrate
Charge Injection in Solution-Processed Organic Field-Effect Transistors: Physics, Models and Characterization Methods
A high-mobility organic semiconductor employed as the active material in a field-effect transistor does not guarantee per se that expectations of high performance are fulfilled. This is even truer if a downscaled, short channel is adopted. Only if contacts are able to provide the device with as much charge as it needs, with a negligible voltage drop across them, then high expectations can turn into high performances. It is a fact that this is not always the case in the field of organic electronics.
In this review, we aim to offer a comprehensive overview on the subject of current injection in organic thin film transistors: physical principles concerning energy level (mis)alignment at interfaces, models describing charge injection, technologies for interface tuning, and techniques for characterizing devices. Finally, a survey of the most recent accomplishments in the field is given. Principles are described in general, but the technologies and survey emphasis is on solution processed transistors, because it is our opinion that scalable, roll-to-roll printing processing is one, if not the brightest, possible scenario for the future of organic electronics.
With the exception of electrolyte-gated organic transistors, where impressively low width normalized resistances were reported (in the range of 10 Ω·cm), to date the lowest values reported for devices where the semiconductor is solution-processed and where the most common architectures are adopted, are ∼10 kΩ·cm for transistors with a field effect mobility in the 0.1–1 cm2/Vs range. Although these values represent the best case, they still pose a severe limitation for downscaling the channel lengths below a few micrometers, necessary for increasing the device switching speed. Moreover, techniques to lower contact resistances have been often developed on a case-by-case basis, depending on the materials, architecture and processing techniques. The lack of a standard strategy has hampered the progress of the field for a long time. Only recently, as the understanding of the rather complex physical processes at the metal/semiconductor interfaces has improved, more general approaches, with a validity that extends to several materials, are being proposed and successfully tested in the literature. Only a combined scientific and technological effort, on the one side to fully understand contact phenomena and on the other to completely master the tailoring of interfaces, will enable the development of advanced organic electronics applications and their widespread adoption in low-cost, large-area printed circuits
Going Beyond Counting First Authors in Author Co-citation Analysis
The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
High-resolution direct-writing of metallic electrodes on flexible substrates for high performance organic field effect transistors
We report on organic field-effect transistors (OFETs) with sub-micrometer channels fabricated on plastic substrates with fully direct-written electrical contacts. In order to pattern source and drain electrodes with high resolution and reliability, we adopted a combination of two digital, direct writing techniques: ink-jet printing and femtosecond laser ablation. First silver lines are deposited by inkjet printing and sintered at low temperature and then sub-micrometer channels are produced by highly selective femtosecond laser ablation, strongly improving the lateral patterning resolution achievable with inkjet printing only. These direct-written electrodes are adopted in top gate OFETs, based on high-mobility holes and electrons transporting semiconductors, with field-effect mobilities up to 0.2 cm2/V s. Arrays of tens of devices have been fabricated with high process yield and good uniformity, demonstrating the robustness of the proposed direct-writing approach for the patterning of downscaled electrodes for high performance OFETs, compatibly with cost-effective manufacturing of large-area circuits
Variations on the Author
“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Quantum chemical insights into the prediction of charge transport parameters for a Naphthalenetetracarboxydiimide-based copoly-mer with enhanced electron mobility
Intra- and intermolecular charge transport parameters have been calculated for a high electron mobility (n-type) naphthalenedicarboximide copolymer (named P(NDI2OD-T2)) recently synthesized and tested for OFETs applications. Hole and electron charge transport properties have been investigated by using different DFT functionals in order to understand the chemical-physical characteristics of such high electron transporting material and to rationalize the differences between the hole and the electron charging processes
Appropriate Similarity Measures for Author Cocitation Analysis
We provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Dispelling the Myths Behind First-author Citation Counts
We conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
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