1,720,971 research outputs found
FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT
No full textThis letter reports on a novel reoxidation technique for SiO2/Si3N4 (ON) stacked films by using N2O as oxidant. Effect of in-situ rapid thermal N2O reoxidation (RTNO) on the electrical characteristics of thin ON stacked films are studied and compared with those of in-situ rapid thermal O2 reoxidation (RTO). Prior to reoxidation, the Si3N4 film was deposited by rapid thermal chemical vapor deposition (RT-CVD) using SiH4 and NH3. Results show that RTNO of the Si3N4 films significantly improves electrical characteristics of ON stacked films in terms of lower leakage current, suppressed charge trapping, reduced defect density and improved time-dependent-dielectric-breakdown (TDDB), as compared to RTO of the Si3N4 films
EFFECTS OF GROWTH TEMPERATURE ON TDDB CHARACTERISTICS OF N2O-GROWN OXIDES
No full textIn this paper, effects of oxide growth temperature on time-dependent dielectric breakdown (TDDB) characteristics of thin (115 angstrom) N2O-grown oxides are investigated and compared with those for conventional O2-grown SiO2 films with identical thickness. Results show that TDDB characteristics of N2O oxides are strongly dependent on the growth temperature and, unlike conventional SiO2, TDDB properties are much degraded for N2O oxides with an increase in growth temperature. Large undulations at the Si / SiO2 interface, caused by locally retarded oxide growth due to interfacial nitrogen, are suggested as a likely cause of degradation of TDDB characteristics in N2O oxides grown at higher temperatures
HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT
No full textWe report a detailed study of time-dependent dielectric breakdown (TDDB) in N2O-grown thin (47-120 angstrom) oxides. A significant degradation in breakdown properties (such as charge-to-breakdown, breakdown field) was observed in N2O oxides with increasing oxide growth temperature; a strikingly different dependence than that in pure oxides. A physical model based on undulations at the Si/SiO2 interface is discussed to account for the degradation of breakdown properties for higher N2O oxidation temperature. Accelerated breakdown in N2O oxides for higher operating temperatures and higher oxide fields as well as thickness dependence of TDDB are studied under both polarities of injection. These dependencies are similar to the reported data on pure oxides. Breakdown under unipolar and bipolar stress in N2O oxides is compared with dc breakdown. Unlike the case of pure oxides, an asymmetric improvement in time-to-breakdown under positive versus negative gate unipolar stress is observed, which is attributed to charge detrapping behavior in N2O oxides. A dramatic reduction in time-to-breakdown of N2O oxide is observed under bipolar stress when the thickness is scaled below 60 angstrom. A physical model, based on the thickness dependence of trapped hole centroid, is suggested to explain this behavior. Overall, our results indicate that N2O oxides are expected to show improved breakdown properties than pure SiO2 Over a wide range of operating temperatures, electric fields, oxide thicknesses, as well as under ac stress
Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices
No full textIntegration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon
No full text
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Tensile-strained germanium CMOS integration on silicon
No full text10.1109/LED.2007.909836IEEE Electron Device Letters28121117-1119EDLE
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