1,720,979 research outputs found
Analysis of silicon germanium standards for the quantification of SiGe microelectronic devices using AES
No full textFour samples of well-defined silicon-germanium alloys were used as standards for calibration purposes to allow accurate quantification of silicon-germanium-on-insulator (SGOI) microelectronic devices using Auger electron spectroscopy. Narrow Si KLL and the Ge LMM, high resolution Si KL2,3L2,3 and Ge L3M4,5M4,5 together with survey spectra were collected and are presented from each sample. A matrix effect was observed for silicon in germanium and calculated as 0.85 and 0.95 for the Ge77.5Si22.5 and Ge52.4Si47.6 alloys respectively
Group IV functionalization of low index waveguides
No full textLow fabrication error sensitivity, integration density, channel scalability, low switching energy and low insertion loss are the major prerequisites for future on-chip WDM systems and interfacing with optical fibres. A number of device geometries have already been demonstrated that fulfil these criteria, at least in part, but combining all of the requirements is still a difficult challenge.Two contenders that could fulfil these criteria are the low loss nitride waveguiding platform and the high index group IV compounds for active photonic devices. Silicon Oxynitride (SiON) and Silicon Nitride (SiN) based waveguides are extremely powerful and central to today’s optical communications networks. The intermediate refractive index provides low footprint devices but eases the fabrication demands that can result in phase errors and repeatability problems in the all silicon approach. This enables multiplexers and demultiplexers with very low crosstalk and insertion loss and extremely low loss long range waveguides, making them very attractive for the optical backplanes and rack to rack links inside supercomputers and data centers. Group IV Photonics GeSi has a number of attractive optical characteristics for modulation, absorption and detection in a small volume area enabling low power and high density integration.Here, we propose and demonstrate a novel architecture consisting of the interfacing of a range of deposition method using low temperature PECVD and HWCVD nitride waveguides, Photonic crystal modulators [1] but also detectors [2] connected by a silicon nitride bus waveguide. The architecture features very high scalability due to the small size of the devices (~100 micrometre square) and the modulators operate with an AC energy consumption of less than 1fJ/bit
Germanium for photonic applications
No full textLocalized GOI wires have been grown using a LPE process resulting in single crystal layers up to 400 µm in length and 5 µm in width. We have reported on the design, fabrication and characterisation of a 4-channel AMMI structure integrated with germanium p-i-n photodetectors to form a silicon photonics receiver. Light detection at 50 Gb/s has been demonstrated with a low dark current of < 20 nA at -1 V bias. The AMMI structure exhibits a low insertion loss of < -0.5 dB and cross-talk of < -15 dB across the 4 channels
Group IV compounds for integrated photonic applications
No full textWe report methods of engineering the bandgap of SiGe and Ge compounds for the fabrication of electro absorption modulators and light emitting devices. We demonstrate uniform composition, single crystal, defect free SiGe-on-insulator formation. The composition can be tuned in different positions of the chip by modifying the structural design. We also demonstrate Ge disks with strain values of 1.1 and 0.6%
Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectors
No full textThe development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly desirable for the field of silicon photonics. At present, most Ge-on-Si growth techniques require high growth temperatures, followed by cyclic annealing at temperatures >800 °C, often for a period of several hours. Here, we present a low-temperature (400 °C) low-cost plasma-enhanced chemical vapor deposition (PECVD) Ge-on-Si growth study and, subsequently, fabricate a high-speed zero-bias 12.5-Gb/s waveguide integrated photodetector with a responsivity of 0.1 A/W at a wavelength of 1550 nm. This low-energy device demonstrates the feasibility of the PECVD method for the fabrication of low-cost low-thermal-budget Ge-on-Si devices
CMOS-compatible deposition of tunable crystalline SiGe composition on insulator
No full textWe report a new method of deposition for crystalline SiGe and Ge on insulator. The method enable to deposit multiple concentration of SiGe or pure Ge on insulator using one deposition process
Adaptive delay lines implemented on a photonics chip for extended-range, high-speed absolute distance measurement
No full textHigh-speed (upwards of 105 coordinates s-1) and long-range (~10 m) absolute distance measurement applications based on frequency scanning interferometry (FSI) generate very high modulation frequencies (typically >100 GHz) due to the laser frequency sweep rate and the large imbalance between the reference and object arms. Such systems are currently impractical due to the extremely high cost associated with sampling at these signal frequencies. Adaptive delay lines (ADLs) were recently proposed as a solution to balance the interferometer and therefore reduce sampling rate requirements by a factor of 2N, where N is the number of switches in the ADL [1, 2]. The technique has been successfully demonstrated in the lab using bulk optics and optical fiber configurations, and further reduction in size and cost will increase the breadth of metrology applications that can be addressed. Silicon photonics constitute an effective platform to miniaturize ADLs to chip-scale, simplifying instrument manufacture and providing a more robust configuration compared to bulk-optics and fiber-based solutions. We discuss the design and fabrication of chip-scale ADLs on a silicon on insulator (SOI) photonics platform, using optical switches based on heaters, multi-mode interferometer (MMI) couplers and Mach-Zehnder interferometers (MZI). We also establish the heater voltages of 4 switches in series, required to switch the optical path in the reference arm, a necessary step to use the device for FSI range measurements.</p
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
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