1,500 research outputs found
Identification of positive selection in pigs by comparing linkage disequilibrium variances.
No full textSupplementary data for publication: Xiuling Li, Songbai Yang, Kunzhe Dong, Zhonglin Tang, Kui Li, Bin Fan, Zhiquan Wang and Bang Liu. (2017). Identification of positive selection in pigs by comparing linkage disequilibrium variances. Animal Genetics, 48(5), 600-60
Identification of positive selection in pigs by comparing linkage disequilibrium variances.
No full textSupplementary data for publication: Xiuling Li, Songbai Yang, Kunzhe Dong, Zhonglin Tang, Kui Li, Bin Fan, Zhiquan Wang and Bang Liu. (2017). Identification of positive selection in pigs by comparing linkage disequilibrium variances. Animal Genetics, 48(5), 600-60
Identification of positive selection in pigs by comparing linkage disequilibrium variances.
No full textSupplementary data for publication: Xiuling Li, Songbai Yang, Kunzhe Dong, Zhonglin Tang, Kui Li, Bin Fan, Zhiquan Wang and Bang Liu. (2017). Identification of positive selection in pigs by comparing linkage disequilibrium variances. Animal Genetics, 48(5), 600-60
Self-rolled-up membrane (S-RuM) capacitors and filters for radio frequency communication
No full textSelf-rolled-up membrane (S-RuM) is a novel technology to build precisely controllable three- dimensional (3D) micro-structures. This technology finds wide applications in passive electronics, photonics, and neural interfaces, and achieves great device size reduction and performance enhancement. For passive electronics, devices based on S-RuM utilize electromagnetic energy well- confined in the device tubular cavity with extremely high efficiency, and break the footprint and parasitic effect limit set by conventional planar devices. S-RuM inductors and capacitors can reach self- resonant frequency up to 60 GHz, Q factor up to 80, and with footprint one hundredth that of the state- of-the-art 2D counterparts. This thesis illustrates the working mechanism of S-RuM technology first, and then introduces S-RuM passive electronic devices for radio frequency (RF) application. Current approaches to improve RF passive device performance are discussed. Designs of capacitors and filters based on S-RuM are demonstrated, followed by simulation and lab measurement results. Challenges associated with S-RuM passive electronics are addressed and solutions are proposed. Future work and potential wearable device applications are summarized.Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2019-12-01The student, Moyang Li, accepted the attached license on 2017-12-15 at 09:32.The student, Moyang Li, submitted this Thesis for approval on 2017-12-15 at 09:45.This Thesis was approved for publication on 2017-12-15 at 09:53.DSpace SAF Submission Ingestion Package generated from Vireo submission #11992 on 2018-03-13 at 10:38:29Made available in DSpace on 2018-03-13T17:35:58Z (GMT). No. of bitstreams: 2
LI-THESIS-2017.pdf: 5734899 bytes, checksum: b43ef276b84fb33584807008ed008278 (MD5)
LICENSE.txt: 4206 bytes, checksum: fd8709b8106b4e3db45b887b541c0747 (MD5)
Previous issue date: 2017-12-15Embargo set by: Seth Robbins for item 105509
Lift date: 2020-03-13T17:36:05Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemLimited Restriction Lifted for Item 105509 on 2020-03-14T09:15:22Z
Supplementary data - Supplemental material for Study in Pesticide Activities of <i>Polygonum cuspidatum</i> Extracts and its Active Ingredient Resveratrol
No full textSupplemental material, Supplementary data, for Study in Pesticide Activities of Polygonum cuspidatum Extracts and its Active Ingredient Resveratrol by Wenqiang Yang, Fenglu Li, Xiaoyi Xing, Zhen Wang, and Xiuling Yu in Natural Product Communications</p
Metal-assisted chemical etching of 4H silicon carbide
No full textMetal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by Li and Bohn in 2000. These include several semiconductor substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions.
SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This is a serious limitation for its applicability to a wider range of etching applications. In this thesis, nanoscale nonporous wet etching is demonstrated on 4H-SiC. Both photolithography and nanosphere lithography are used to pattern the substrate, being compared in etch quality and characteristics. Control of porosity and etch rate are presented, with a mechanism analysis provided to complement the explanations in the literature.Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-05-01The student, Julian Michaels, accepted the attached license on 2020-05-12 at 13:11.The student, Julian Michaels, submitted this Thesis for approval on 2020-05-12 at 13:24.This Thesis was approved for publication on 2020-05-12 at 16:36.DSpace SAF Submission Ingestion Package generated from Vireo submission #15354 on 2020-08-25 at 17:44:23Made available in DSpace on 2020-08-27T00:51:32Z (GMT). No. of bitstreams: 2
MICHAELS-THESIS-2020.pdf: 1453595 bytes, checksum: 696e06218750c1f2d7f31337ad1ee5b3 (MD5)
LICENSE.txt: 4212 bytes, checksum: 8731fbe7c41f67cf8d2c801bc8a1da9c (MD5)
Previous issue date: 2020-05-12Embargo set by: Seth Robbins for item 115962
Lift date: 2022-08-27T00:51:40Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemAuthor requested closed access (OA after 2yrs) in Vireo ETD systemLimite
sj-docx-1-eae-10.1177_0958305X221133263 - Supplemental material for Hydrocarbon regulation and lower temperature pyrolysis of balikun oil shale kerogen
No full textSupplemental material, sj-docx-1-eae-10.1177_0958305X221133263 for Hydrocarbon regulation and lower temperature pyrolysis of balikun oil shale kerogen by Fei Liu, Weiguang Shi, Tianbao Liu, Wei Li, Liang Sun, Xiangbin Liu, Changming Zhao, Benxian Li, Sunhua Deng, Zhaohui Dong, Chengwu Xu, Xiaofei Fu and Xiuling Yan in Energy & Environment</p
Self-rolled-up membrane (S-RuM) capacitors and filters for radio frequency communication
No full textSelf-rolled-up membrane (S-RuM) is a novel technology to build precisely controllable three- dimensional (3D) micro-structures. This technology finds wide applications in passive electronics, photonics, and neural interfaces, and achieves great device size reduction and performance enhancement. For passive electronics, devices based on S-RuM utilize electromagnetic energy well- confined in the device tubular cavity with extremely high efficiency, and break the footprint and parasitic effect limit set by conventional planar devices. S-RuM inductors and capacitors can reach self- resonant frequency up to 60 GHz, Q factor up to 80, and with footprint one hundredth that of the state- of-the-art 2D counterparts. This thesis illustrates the working mechanism of S-RuM technology first, and then introduces S-RuM passive electronic devices for radio frequency (RF) application. Current approaches to improve RF passive device performance are discussed. Designs of capacitors and filters based on S-RuM are demonstrated, followed by simulation and lab measurement results. Challenges associated with S-RuM passive electronics are addressed and solutions are proposed. Future work and potential wearable device applications are summarized
Study on disaster related data by literature search method- earthquake & flood as showcase
No full textChip scale monolithic integration of inductive and capacitive components by self-rolled-up membrane nanotechnology
No full textThis work reports a three-dimensional (3D) microwave L-C filter network enabled by a CMOS-compatible two-dimensional (2D) fabrication approach, which combines inductive (L) and capacitive (C) self-rolled-up membrane (S-RuM) components monolithically into a single L-C network structure, thereby greatly reducing the on-chip area footprint. The individual L-C elements are fabricated in-plane using standard semiconductor processing techniques, and subsequently triggered by the built-in stress to self-assemble and roll into cylindrical air-core architectures. By designing the planar structure geometry and constituent layer properties to achieve a specific number of turns with a desired inner diameter when the device is rolled up, the electrical characteristics can be engineered. The network layouts of the L and C components are also reconfigurable by selecting appropriate input, output, and ground contact routing topographies. The devices demonstrated here operate over the range of ~1-10 GHz. Their area and volume footprints are 0.095 mm2 and 0.01 mm3, respectively, which are ~10× smaller than most of the comparable conventional filter designs. These S-RuM-enabled 3D microtubular L-C filter networks represent a significant advancement for miniaturization and integration of RF devices for applications in mobile connectivity.Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-12-01The student, Zhendong Yang, accepted the attached license on 2020-11-25 at 10:23.The student, Zhendong Yang, submitted this Thesis for approval on 2020-11-25 at 10:32.This Thesis was approved for publication on 2020-12-01 at 17:24.DSpace SAF Submission Ingestion Package generated from Vireo submission #15960 on 2021-03-04 at 16:32:27Made available in DSpace on 2021-03-05T21:45:37Z (GMT). No. of bitstreams: 5
YANG-THESIS-2020.pdf: 1810386 bytes, checksum: 5e2b4bcb9dd2dff318b323b766ba2321 (MD5)
Srum1_200X.mp4: 27888411 bytes, checksum: 8a5f4fab4134ef361e68dded454af8c2 (MD5)
MS_Thesis V2.docx: 6437186 bytes, checksum: e0aabf2a40f516bb1047caa869547dac (MD5)
Thesis Figures.pptx: 32904870 bytes, checksum: 9a9ee9c2e8bc74d996a81d86fe0b07a7 (MD5)
LICENSE.txt: 4210 bytes, checksum: e538cfdfccdfbcc0183508254d380a0c (MD5)
Previous issue date: 2020-12-01Embargo set by: Seth Robbins for item 117307
Lift date: 2023-03-05T21:45:47Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemEmbargo set by: Seth Robbins for item 117307
Lift date: 2023-03-05T21:47:41Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemAuthor requested closed access (OA after 2yrs) in Vireo ETD systemLimite
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