1,721,338 research outputs found

    Self-localization of a mobile robot without camera calibration using projective invariants

    No full text
    In this paper, we propose a visual-based self-localization algorithm of an indoor mobile robot, The algorithm does not require calibration and can be worked with only a single image by using the projective invariant relationship between natural landmarks. The position of the robot is determined by relative positioning. Also, the method does not require previous information of the position of the robot. The robustness and feasibility of our algorithm have been demonstrated through experiments in hallway environments. (C) 2000 Elsevier: Science B.V. All rights reserved

    Automatic edge detection using 3 x 3 ideal binary pixel patterns and fuzzy-based edge thresholding

    No full text
    An edge magnitude and direction scheme that uses 3 x 3 ideal binary pixel patterns and a lookup table is described. Final edges are determined automatically using the non-maximum suppression with edge confidence measure and fuzzy-based edge thresholding, even in a changing environment. (C) 2003 Elsevier B.V. All rights reserved.This research has been supported by KOTEF grant and NRL of MIST

    Defect creation in a-Si:H thin film transistors by bias-stress

    No full text
    We have studied defect creation in hydrogenated amorphous silicon thin film transistors by measuring the I-V characteristic curves with the bias condition varied. It is found that there is a distortion in the I-V curves after a spatially asymmetric bias-stress. In order to explain the unusual behavior in the I-V characteristic curves, we employed increased defects at the lower part of the gap which have an asymmetric distribution along the channel due to the spatially asymmetric positive gate bias. Compared with the experiments, good agreement is obtained

    Microcrystalline silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using helium gas

    No full text
    We have investigated the growth of microcrystalline silicon films by electron cyclotron resonance plasma chemical vapor deposition (ECR-PCVD) using He as the ECR gas at substrate temperatures in the range of 180 to 550 degrees C with He to silane ratios (He/SiH4) of 1: 4, and 9. With ratios of 4 and 9, the volume fractions of microcrystalline silicon increase with temperature and exceed 90% at 550 degrees C. To study the role of He plasma; we prepared silicon films using a layer-by-layer technique and found that long exposure to He plasma changes the structure of amorphous silicon to microcrystalline.This work was partially supported by the Korea Science and Engineering Foundation (KOSEF) through the Semiconductor Physics Research Center (SPRC)

    Going Beyond Counting First Authors in Author Co-citation Analysis

    Full text link
    The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
    corecore