75 research outputs found
Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
No full textThe irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. The displacement threshold energies - different for different crystallographic axes, considered as parameters of the model, are established and the results obtained could contribute to clarify these controversial aspects. Predictions of the degradation of electrical parameters (leakage current, effective carrier concentration and effective trapping probabilities for electrons and holes) of DOFZ silicon detectors in the hadron background of the LHC accelerator, supposing operation at -10 grdC are done. The non uniformity of the rate of production of primary defects and of complexes, as a function of depth, for incident particles with low kinetic energy was obtained by simulations in some particular and very simplifying assumptions, suggesting the possible important contribution of the low energy component of the background spectra to detector degradation
Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments
No full textThe influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is investigated in the frame of the quantitative phenomenological model developed previously by the authors and extended in the present paper. Continuous irradiation conditions are considered, simulating realistically the environments for these experiments. The generation rate of primary defects is calculated starting from the projectile - silicon interaction and from the recoil energy redistribution in the lattice. The mechanisms of formation of complex defects are explicitly analysed. Vacancy-interstitial annihilation, interstitial and vacancy migration to sinks, divacancy, vacancy- and interstitial-impurity complex formation and decomposition are considered. Oxygen and carbon impurities present in silicon could monitor the concentration of all stable defects, due to their interaction with vacancies and interstitials. Their role in the mechanisms of formation and decomposition of the following stable defects: V_2, VO, V_2O, C_i, C_iO_i, C_iC_s and VP, is studied. The model predictions cover a generation primary rate of defects between 10^2 pairs/cm3/s and 10^{11} pairs/cm3/s, and could be a useful clue in obtaining harder materials for detectors for space missions, at the new generation of accelerators, as, e.g. LHC, Super-LHC and Eloisatron, or for industrial applications
Exploring the detection of AQNs in large liquid detectors
No full textRecent work from the last years has raised the possibility that a portion of
Dark Matter could consist of exotic particles, such as axion (anti)quark
nuggets (AQN, A\bar{Q}N). After a brief review outlining the main features of
axion antiquark nuggets, we explore potential experimental signatures that can
be leveraged to search for these stable supermassive particles in future
surface and underground experiments using large liquid detectors. These
expected signals are discussed in relation to the specific characteristics of
each detection system.Comment: 16 pages, 3 Figures, published in JCAP05(2024)014. Minor changes
compared to the previous version. arXiv admin note: text overlap with
arXiv:0709.4635 by other author
The modelling of long-term damage after irradiation in silicon for uses at the LHC accelerator and in space mission, and its influence on detector performances
No full textAn Analysis of the Expected Degradation of Silicon Detectors in the Future Ultra High Energy Facilities
No full textIn this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. Possible effects at the detector level after high energy cosmic proton bombardment are investigated as well. Time dependences of these device parameters are studied in conditions of continuous irradiation and the technological options for detector materials are discussed, to obtain devices harder to radiation.In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. Possible effects at the detector level after high energy cosmic proton bombardment are investigated as well. Time dependences of these device parameters are studied in conditions of continuous irradiation and the technological options for detector materials are discussed, to obtain devices harder to radiation.In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. Possible effects at the detector level after high energy cosmic proton bombardment are investigated as well. Time dependences of these device parameters are studied in conditions of continuous irradiation and the technological options for detector materials are discussed, to obtain devices harder to radiation.In this contribution we discuss how to prepare some possible detectors – only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. Possible effects at the detector level after high energy cosmic proton bombardment are investigated as well. Time dependences of these device parameters are studied in conditions of continuous irradiation and the technological options for detector materials are discussed, to obtain devices harder to radiation
Energy loss and damage production by heavy ions and strange quark matter in silicon
No full textIn this contribution the peculiarities of the behaviour of strange quark matter in respect to ordinary ions in silicon are investigated, and a tentative to identify possible observable effects of degradation is made.In this contribution, the peculiarities of the behaviour of strange quark matter in respect to ordinary ions in silicon are investigated, and a tentative to identify possible observable effects of degradation is made
AN ANALYSIS OF THE EXPECTED DEGRADATION OF SILICON DETECTORS IN THE FUTURE ULTRA HIGH ENERGY FACILITIES
No full textScenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions
No full textFor the new hadron collider LHC and some of its updates in luminosity and energy, as SLHC and VLHC, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation in the bulk of the silicon as material and for silicon detectors, in continuous radiation field, in these hostile conditions. The behaviour of silicon in relation to various scenarios for upgrade in energy and luminosity is discussed in the frame a phenomenological model developed previously by the authors. Different silicon material parameters resulting from different technologies are considered to evaluate what materials are harder to radiation and consequently could minimise the degradation of device parameters in conditions of continuous long time operation
Transient thermal effects in solid noble gases as materials for the detection of Dark Matter
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