1,720,968 research outputs found
Impact of thermoelectric effects on phase change memory characteristics
Full text linkJoule heating in phase change memory (PCM) controls programming characteristics, read disturb, and programming disturb. To optimize the energy consumption and reliability of PCM, a thorough understanding of Joule heating as a function of the electrical operation of the device is thus strongly required. This paper presents a comprehensive characterization of thermoelectric (TE) effects in PCM operated at positive and negative voltage polarity. The impact of polarity was studied for all major temperature-dependent properties of the PCM device, namely, melting, crystallization, ion migration, threshold switching, and holding. It was demonstrated that heating is less efficient under negative voltage, compared with positive voltage. It was also shown that the positive and negative voltages needed to induce all above phenomena display a universal correlation. We propose a unified finite-element model for the PCM, which correctly accounts for the observed polarity-dependent heating and the universal voltage characteristics. The impact of isotropic scaling on TE is finally addressed
Bipolar switching in chalcogenide phase change memory
Full text linkPhase change materials based on chalcogenides are key enabling technologies for optical storage, such as rewritable CD and DVD, and recently also electrical nonvolatile memory, named phase change memory (PCM). In a PCM, the amorphous or crystalline phase affects the material band structure, hence the device resistance. Although phase transformation is extremely fast and repeatable, the amorphous phase suffers structural relaxation and crystallization at relatively low temperatures, which may affect the temperature stability of PCM state. To improve the time/temperature stability of the PCM, novel operation modes of the device should be identified. Here, we present bipolar switching operation of PCM, which is interpreted by ion migration in the solid state induced by elevated temperature and electric field similar to the bipolar switching in metal oxides. The temperature stability of the high resistance state is demonstrated and explained based on the local depletion of chemical species from the electrode region
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Universal Thermoelectric Characteristic in Phase Change Memories
No full textThermoelectric effects play an important role in phase change memory (PCM), where phase transition and atomic migration are accelerated by temperature. A deep understanding of thermoelectric effects may allow a physics-based design of the cell structure and materials to optimize programming speed/energy and reliability. In this work we study the polarity-dependence of PCM characteristics, including crystallization, melting, electrical switching/holding, and ion migration. These characteristics show slower kinetics at negative voltage, which we attribute to thermoelectric effects of electrically-induced heating. We demonstrate a universal correlation of positive/negative kinetics, which we reproduce by modelling Thomson and Peltier heating in the PCM device
Appropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
Full text linkResistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part II: Select Devices
Full text linkThe cross-point architecture for memory arrays is widely considered as one of the most attractive solutions for storage and memory circuits thanks to simplicity, scalability, small cell size, and consequently high density and low cost. Cost-scalable vertical 3-D cross-point architectures, in particular, offer the opportunity to challenge Flash memory with comparable density and cost. To develop scalable cross-point arrays, however, select devices with sufficient ON-OFF ratio, current capability, and endurance must be available. This paper presents a select device technology based on volatile resistive switching with Cu and Ag top electrode and silicon oxide (SiOx) switching materials. The select device displays ultrahigh resistance window and good current capability exceeding 2 MAcm−2. Retention study shows a stochastic voltage-dependent ON-OFF transition time in the 10 μs-1 ms range, which needs to be further optimized for fast memory operation in storage class memory arrays
Dispelling the Myths Behind First-author Citation Counts
Full text linkWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
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