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Optimized Design Topologies for Position-Sensitive Silicon Drift Detectors Operating at High Drift Fields
No full textImpact of the Ionization Profile on the Time- and Position-Resolution in Multi-Linear Silicon Drift Detectors
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Apparatus and method for detecting electromagnetic radiation or ionizing particles
No full textAn apparatus for detecting energy and point of incidence of an ionizing event comprising a semiconductor layer (1, 2) with a first type of conductivity, in which at least one first doped region (AN1-AN4; AR; 52) with the first type of conductivity and a corresponding plurality of second doped regions (P1-Pn; S1-S7; 50, 50') with a second type of conductivity associated to said at least one first doped region are formed on a first surface of said layer, said at least first doped region and said corresponding plurality of second doped regions defining a respective drift path for charge carriers with the first type of conductivity, and at least one third doped region (3) with the second type of conductivity is formed on a second surface of said layer, and means (6; R, M1-M8; 6') for biasing said second doped regions and said third doped region which is capable of reversely biasing the junctions between the second doped regions and the semiconductor layer and between the third doped region and the semiconductor layer so as to deplete the semiconductor layer. Said biasing means is capable of providing two different operating conditions of the detection apparatus, the first operating condition providing the formation of a plurality of potential energy wells for said charge carriers in the semiconductor layer (1, 2) at predetermined distances along said drift path from said first doped region (AN1-AN4; AR; 52), said wells being able to confine all of the charge carriers generated by an ionizing event essentially to the points of incidence of the ionizing event, the second operating condition providing the removal of said potential energy wells so as to cause the charge carriers to drift towards said at least one first doped region along said drift path and keeping the charge carriers confined to directions which are perpendicular to the drift path.; The electric fields in the apparatus are different, although static in the two different operating conditions
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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