1,721,061 research outputs found
Depassivation of Latent Plasma Damage in n-MOSFETs
No full textIndispensable in CMOS manufacturing, plasma treatments may result in a latent damage in gate oxides. We propose a method to detect this latent damage as a function of the area of the multifingered metal pad connected to the gate, by using an experimental method based on constant current stress and oxide trapped charge measurements. We measured a power law behavior describing the dependence of the trapped charge on the injected charge
Low field latent plasma damage depassivation in thin oxide MOS
No full textA novel plasma-process induced damage depassivation method is proposed. Using a staircase-like stress voltage and varying the stress time, we were able to depassivate the latent damage at very low-field on both nMOS and pMOS devices. The dynamic of the interface traps generation is studied; pMOS devices show a peculiar behavior, which can be explained understanding the mechanisms involved in damage depassivation. The energy of carriers is identified as the damaging factor
Radiation induced depassivation of latent plasma damage
No full textThe radiation impact on antenna devices can give new insights on basic mechanisms underlying the latent plasma damage nature and radiation hardness of commercial CMOS technologies for space applications. When MOS structures are exposed to ionizing radiation, electron-hole (e/sup -/-h/sup +/) pairs are created along the track of the incident particle. Some fraction of these e/sup -/-h/sup +/ pairs will recombine, and that fraction is a function of the oxide material, the kind of radiation, and the applied oxide electric field. In general, thinner oxides are less prone to radiation effects than thicker ones; applied bias permits to investigate (modulate) the trap creation in the bulk oxide and at the interface. In this study X-rays and e-beam sources have been considered. Although an e-beam LINAC with 8 MeV electrons is a standard source for radiation hardness characterization, its use is difficult for irradiating wafer with a large diameter. On the other side, fully automated protestations with X-ray tubes are commercially available. As a fair comparison, for a given dose and SiO/sub 2/ oxide technology, X-rays usually have a larger detrimental impact on MOSFET I-V characteristics with respect to the e-beam. Electrical stresses reactivate the latent plasma damage as well as ionizing radiation, but fewer studies have addressed the latter aspect and most of them date back to the older MOS technologies of the 70's and 80's. More recently, plasma damage reactivation in a 17.5- nm oxide due to ionizing, radiation has been addressed. The rapid evolution of plasma equipments and MOS technologies, such as the reduction of the gate oxide thickness well below 10 nm and the increase of the metal levels, suggests extending this investigation to more recent CMOS generations. This has been the purpose of this work, which is concentrated on the latent damage reactivation induced by ionizing radiation on a commercial 0.35 /spl mu/m (t/sub ox/=7 nm) CMOS technology
A new experimental technique to evaluate the plasma induced damage at wafer level testing
No full textPlasma processing has become an integral part of the IC fabrication, since it offers advantages in terms of directionality, low temperature and process convenience. However plasma processing induces an oxide charging damage, which is function of process conditions and gate interconnect layout. At the end of the process the plasma damage is "hidden" by hydrogen passivation and becomes latent. At a first electrical inspection all the devices on wafer present nearly the same electrical parameters, whereas a small stress is enough to reveal the plasma damage, producing again a drift of all transistor parameters. In fact the applied stress both depassivate the latent plasma damage and introduce newly defects, which are electrically undistinguishable from plasma damage and depend on applied stress conditions. In our contribution we propose an experimental stress methodology to investigate both the latent damage depassivation effect and the net contribution of plasma damage
Impact of band structure on charge trapping in thin SiO2/Al2O3/Poly-Si gate stacks
No full textElectron and hole trapping were studied in sub-2-nm
SiO2 Al2O3 poly-Si gate stacks. It was found that during
substrate injection, electron trapping is the dominant mechanism.
Conversely, during gate injection both hole and electron trapping
can be observed, depending on the applied bias. These hot carrier
effects are closely linked to the band structure of SiO2 Al2O3
poly-Si system
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing
No full textThis paper presents an original approach for material studies for memory devices where the degree of intermixing between the high-k and interfacial SiO2 is explicitly quantified experimentally. Using calibrated leakage simulation the importance of intermixing is verified independently together with the conduction mechanism. The implication for NVM reliability are profound and will be discussed toward retention mechanisms and used to optimize retention margins for NVM memories
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Depassivation of latent plasma damage in pMOS devices
No full textWhile plasma-induced charging damage has been widely studied in recent years, much of the work has concentrated upon the impact on n-channel MOSFET reliability [1-6]. This work focuses the impact of plasma damage on pMOS devices from the viewpoint of oxide trapped charge and interface states with the experimental featuring two parameters Qp and ΔNp, linked respectively to the oxide charge and the interface state density. This experimental method is valid for pMOS devices in two different technologies and permits to fully compare devices with different oxide thickness. Furthermore, we demonstrate that, for a given antenna, the plasma damage roughly has the same net impact on transistor characteristics, regardless of oxide thickness
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
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