1,720,955 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
koamabayili/VECTRON-author-checklist: VECTRON author checklist
No full textWe have done our best to complete the author checklist relating to the use of animals in the hut study. Note that the objective for the hut study was to evaluate the IRS treatment applications for residual efficacy against Anopheles mosquitoes, including the local An. coluzzii mosquito population. Cows were only used to attract mosquitoes into the huts and no tests were carried out directly on the cows. The author checklist is intended for use with studies where experiments are carried out on animals, which is why we have had such difficulty in completing this for the hut study, as many of the questions do not relate to how the cows were used
Atomic-level Investigation and Proposals to Address Technological Roadblocks and Reliability Challenges in 2D Material Based Nanoelectronic Devices
No full textThe transistor scaling is witness to many extraordinary inventions during its consecutive miniaturization. The journey began from Dennard’s classical constant field scaling, crossing through the milestones like strain engineering, high ‘k’ gate dielectric, ultrathin body transistor (UTB), silicon on insulator (SOI), and multi-gate 3D architectures, and continues in the form of advanced FinFET technology. However, further downscaling is sensing a dead-end because of the various challenges due to fundamental limitations of silicon, the building material of the transistor. Among these, two significant challenges are mobility degradation due to boundary scattering by surface dangling bonds and loss of gate control due to quantum confinement. To keep downscaling alive, the research community is looking for an alternate material that can mitigate these issues and consist of better fundamental properties from silicon like intrinsic mobility, thermal conductivity, optical response, and mechanical strength.
Two-dimension material (2D material) shows great potential for next-generation electronic material and provides multiple avenues for further exploration. The material is one or a few atomic-layer 2D thin sheets of covalently bonded atoms stacked using weak van der Walls (vdW) forces in the third dimension. The lack of surface dangling bond and atomic-scale thickness mitigates the significant challenges of low mobility and inadequate gate control of the silicon material, respectively. Presently, more than 150 materials exist in the 2D material family. Graphene, Transition Metal Dichalcogenides (TMDs), and Phosphorene are well ahead of other family members due to their extraordinary properties, thereby plenty of investigations. Despite these properties, the materials have several roadblocks to their technological application. Opening bandgap and minimizing contact resistance are significant challenges in graphene, and reducing contact resistance and mature growth and reliability are big concerns for the TMDs. Phosphorene, which has hybrid properties of graphene and TMDs, is relatively less explored due to its spontaneous degradation in the ambient environment. Understanding and mitigating its spontaneous ambient degradation is still an open challenge for the electronics and material research communities across the globe. Keeping in mind these limitations, we explore the problems one by one and find their reasonable solutions.
Based on DFT investigations, the discussion begins with a proposal for a reliable direct bandgap opening technique in graphene. Graphene possesses zero bandgap due to its highly symmetric hexagonal structures, which touch its π and π* orbitals’ energy states near the Fermi level, known as the Dirac point. Breaking this symmetry by carbon vacancy or Stone-Wales (SW) defects opens the bandgap at the Dirac point. However, the carbon vacancy creates unwanted mid-gap (trap) states, attributed to unbound orbitals of the nearest unsaturated carbon atoms at the vacant site. Moreover, the unsaturated carbon atoms react with ambient gases like oxygen, making graphene unstable. Interestingly, hydrogenation or fluorination of the unsaturated carbon atoms near the vacant site helps prevent the trap states while contributing to promising direct band gaps in graphene. The opened bandgap is tunable in the infrared regime and persists for different sizes and densities of hydrogenated or fluorinated patterns. The proposed approach is thermodynamically favorable as well as stable.
The next work demonstrates the contact resistance reduction of graphene with palladium (Pd) by carbon vacancy engineering. The discussion begins with fundamental insights into the Pd-graphene interface and carbon vacancy-assisted contact resistance reduction using Density Functional Theory (DFT), followed by its experimental validation by various processes. Our study reveals significant interaction of Pd with graphene. Their orbitals overlap leads to potential barrier lowering at the interface, which can be reduced further by bringing graphene closer to the bulk Pd using carbon vacancy engineering at the contacts. Thus, the carbon vacancy-assisted barrier modulation reduces contact resistance by increasing carrier transmission probabilities at the interface. The theoretical findings have been emulated experimentally by carbon vacancy engineering at the graphene Field Effect Transistors (FETs). Different contact engineered graphene devices with Pd contacts shows significant contact resistance reduction, measuring as low as ~78 Ω-µm at room temperature. The contact resistance shows a ‘V’ shape curve as a function of defect density. The optimum contact resistance achieved is significantly lower than their pristine counterpart, as predicted by the theoretical estimates.
Subsequently, the journey turns towards an atomic level investigation of phosphorene ambient degradation using the first-principles Molecular Dynamics (MD) simulations in the following work. The study reveals that the oxygen molecule dissociates spontaneously over pristine phosphorene in the ambient environment resulting in an exothermic reaction, which is boosted further by increasing partial pressure, temperature, and the presence of oxygen free radicals. The surface reaction is mainly due to lone pair electrons of phosphorous atoms, making the degradation directional and spontaneous under oxygen atoms. Furthermore, water molecules play a vital role in the degradation process by changing the reaction dynamics path of phosphorene-oxygen interaction and reducing activation energy and reaction energy due to its catalyzing action. In addition, phosphorous vacancy acts as an epicenter for oxidation. The oxygen attacks directly over the vacant site and reacts faster than its pristine counterpart. As a result, phosphorene edges resembling extended vacancy are prominent reaction sites that oxidize anisotropically due to different bond angle strains. The edge initiated spontaneous degradation, and rapid oxidation under the free radicals are validated using consistent probing under an optical microscope and Transmission Electron microscope (TEM), respectively.
After material exploration, the next work reveals a unique reliability issue in the Phosphorene FETs. Here, we investigate the role of channel excess holes (due to inversion) in phosphorene degradation using the first-principles MD computations and electrical and Raman characterization. The results show that phosphorene degrades faster under negative gate bias (excess hole) than in pristine conditions (unbiased). The rapid degradation is mainly due to the enhanced chemical interaction of oxygen with the available hole in the channel. The computational findings are experimentally verified over phosphorene FETs. Compared to the unbiased condition, the devices show a faster change in drain current and fast decay of all primary Raman peaks in the ambient environment under negative gate bias.
At the risk of ambient degradation, phosphorene thin flakes are to be identified quickly using a non-destructive technique like Raman to make their FETs for further exploration. The next work shows that the Raman signature of a low-frequency interlayer out-of-plane phonon mode, known as breathing mode, helps in identifying the thin flake quickly. Further, the work talks about thermal evolution and estimates the first-order temperature coefficient of different breathing modes. All the captured modes show a negative temperature coefficient around -0.002-0.003 cm-1/K across different flake thicknesses. Moreover, a closer look at the thermal evolution reflects that the modes follow three-phonon and four-phonon process dominant scattering phenomena at low and high-temperature ranges. The three-phonon process scattering is dominant below ~100 K, shifting to four-phonon process dominant scattering beyond ~150 K. Besides, the work discusses pristine instrumental error in the Raman shift characterization and suggests a mitigation method using Stokes and Anti-stokes scattering lines.
Finally, the last work discusses the interactions of different metals (Au, Cr, Ni, and Pd) with TMDs (MoS2, MoSe2, WS2, and WSe2). The work reflects that Au has a weak interaction with all the TMDs. Thus, it stays more than 2 Å away from the TMDs surfaces. However, other metals show strong chemistry with TMDs. Due to weak interaction, Au offers very few metal-induced gap states (MIGS) in all the TMDs. On the other hand, metals like Cr, Ni, and Pd flood many MIGS in the bandgap region of the TMDs. During interactions, all the metals offer n-type doping to TMDs. Chalcogen vacancy enhances the interaction of the metals with all the TMDs. The vacancy leaves the unbounded orbitals, which bond strongly with the approaching metals. The bonding enhancement reduces the metal-TMDs distances that can be used in contact resistance engineering in their bulk counterparts. Chalcogen interstitial impurity also enhances the bond strength of some metal-TMDs interfaces.
Our journey helps in overall technological advancement in the leading 2D materials. The work digs into the leading roadblocks like contact resistance reduction and method of bandgap opening in graphene, understanding the degradation issue of phosphorene at the material and device level, and exploring metal-TMDs interactions for their contact resistance engineering
Author-wise bibliometric analysis based on entropy.
No full textAuthor-wise bibliometric analysis based on entropy.</p
Author Under Sail The Imagination of Jack London, 1893-1902
No full textIn Author Under Sail, Jay Williams offers the first complete literary biography of Jack London as a professional writer engaged in the labor of writing. It examines the authorial imagination in London's work, the use of imagination in both his fiction and nonfiction, and the ways he defined imagination in the creative process in his business dealings with his publishers, editors, and agents. In this first volume of a two-volume biography, Williams traverses the years 1893 to 1902, from London's "Story of a Typhoon" to The People of the Abyss. The Jack London who emerges in the pages of Author Under Sail is a writer whose partnership with publishers, most notably his productive alliance with George Brett of Macmillan, was one of the most formative in American literary history. London pioneered many author models during the heyday of realism and naturalism, blurring the boundaries of these popular genres by focusing on absorption and theatricality and the representation of the seen and unseen. London created an impassioned, sincere, and extremely personal realism unlike that of other American writers of the time. Author Under Sail is a literary tour de force that reveals the full range of London as writer, creative citizen, and entrepreneur at the same time it sheds light on the maverick side of machine-age literature.Intro -- Title Page -- Copyright Page -- Dedication -- Contents -- Acknowledgments -- Introduction -- 1. Spirit Truth -- 2. From Absorption to Theatricality and Back Again -- 3. "I Will Build a New Present" -- 4. Sons as Authors -- 5. Fathers as Publishers -- 6. The Daughter as Author -- 7. Lovers as Authors -- 8. At Sea with the Family -- 9. Yellow News, Yellow Stories -- 10. The Return Home -- Notes -- Bibliography -- Index -- About Jay WilliamsIn Author Under Sail, Jay Williams offers the first complete literary biography of Jack London as a professional writer engaged in the labor of writing. It examines the authorial imagination in London's work, the use of imagination in both his fiction and nonfiction, and the ways he defined imagination in the creative process in his business dealings with his publishers, editors, and agents. In this first volume of a two-volume biography, Williams traverses the years 1893 to 1902, from London's "Story of a Typhoon" to The People of the Abyss. The Jack London who emerges in the pages of Author Under Sail is a writer whose partnership with publishers, most notably his productive alliance with George Brett of Macmillan, was one of the most formative in American literary history. London pioneered many author models during the heyday of realism and naturalism, blurring the boundaries of these popular genres by focusing on absorption and theatricality and the representation of the seen and unseen. London created an impassioned, sincere, and extremely personal realism unlike that of other American writers of the time. Author Under Sail is a literary tour de force that reveals the full range of London as writer, creative citizen, and entrepreneur at the same time it sheds light on the maverick side of machine-age literature.Description based on publisher supplied metadata and other sources.Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, YYYY. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries
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