1,890 research outputs found
Knights and knighthood in Tudor England
PhDThe first chapters of this thesis attempt to isolate the factors
responsible for the making of a Tudor 1aiigt. Birth (noble and
gentle), education, wealth, conrtexiona, reli&.on, activity in
royal service, war, and the general auninons to take up knighthood
are all surveyed and, together with an analysis of the fluctuating
numbers of knights throughout the century, provide material f a
discussion of royal attitudes towards the honour,
Dubbing ceremonies and the occasions deemed suitable are next
described and a discussion of the aigniticance of the ceremonies
for both crown and subject is undertaken.
Finally, a study of the work of knights as members of
parliament, justices of the peace, sheriffs and deputy lieutenants
seeks to determine whether knights had taken up new duties to replace
the moribund military ones, and a brief conclusion suggests how and
wby knighthood was transformed during the century to survive the
decline of feudalism and chivalry
Optical filters utilizing ion implanted Bragg gratings in SOI waveguides
The refractive index modulation associated with the implantation of oxygen or silicon into waveguides formed in silicon-on-insulator (SOI) has been investigated to determine the feasibility of producing planar, implantation induced Bragg grating optical filters. A two-dimensional coupled mode theory-based simulation suggests that relatively short grating lengths, on the order of a thousand microns, can exhibit sufficient wavelength suppression, of >10 dB, using the implantation technique. Fabricated planar implanted slab-guided SOI waveguides demonstrated an extinction of -10 dB for TE modes and -6 dB for TM modes for the case of oxygen implantation. Extinctions of -5dB and -2 dB have been demonstrated with silicon implantation
Optical detection and modulation at 2µm-2.5µm in silicon
Recently the 2µm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5µm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3µm and 1.55µm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5µm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55µm
Integrating Optical Emitters into Silicon Photonic Waveguides
This thesis reports work targeting the integration of Si light emitters with optical waveguides. Such integrated devices would find utility in a number of applications including telecommunications, optical interconnects, and biological and chemical sensors. Much research has been directed by others on how to improve the emission efficiency and achieve lasing in VLSI (very large scale integration) compatible sources. Here, the focus is on how such devices can be integrated with planar waveguides. Two enhancement techniques were selected for potential integration; defect engineering (DE), and Si nanocrystals (Si-nc) embedded in Si02• Defect engineered light emitting diodes (LEDs) made on silicon-on-insulator (SOI) and emitting at 1.1 μm were successfully demonstrated. In addition, surface photoluminescence from SOI was analyzed to account for interference from the SOI cavity. However, it was determined that the emission efficiency of defect engineered LEDs studied during the course of this work is below that which was reported previously, and that the fabrication procedure thus suffers from irreproducibility. Barring an enormous advancement in the DE technique, it is concluded that the emission efficiency is too small to make use of its integration potential. A more successful approach was obtained from the Si-nc system fabricated using electron-cyclotron resonance plasma enhanced chemical vapor
deposition (ECR-PECVD). Optically pumped edge emitting devices were designed, fabricated and characterized. The devices are comprised of Si-ncs emitting at 800 nm, integrated with slab silicon nitride waveguides. This work is the first report of edge emission from Si-ncs integrated with silicon nitride waveguides. Edge emission and waveguide properties were characterized in the ~850 nm emission band of the Si-ncs. The edge emission was well described as a propagating mode, attenuated primarily by the Si-nc film. Propagation losses of a typical air/Si-nc/SiNx/Si02 waveguide were measured to be 11 ± 2 dB/cm and 20 ± 2 dB/cm at 850 nm in the TE and TM polarizations respectively. A wavelength dependent loss of -0.14 ± 0.03 dB/(cm*nm) was found to exist in the material loss of Si-nc films. In addition, the Si-nc films were found to undergo a partially recoverable photo-induced degradation of PL efficiency during exposure to pump light. Processing techniques compatible with both high efficiency Si-nc and low loss silicon nitride were developed and described. A two-sectioned photonic device was also designed, fabricated and characterized. The device contained an optically pumped Si-nc emitting waveguide section integrated with a low loss silicon nitride slab waveguide. The potential for optically pumped Si-nc emitters integrated with silicon nitride photonic circuits thus appears promising.ThesisDoctor of Philosophy (PhD
STRUCTURE OF THE ART-SPACE IN THE STORY "I" BY A.P. POTEMKIN
The author performs the analysis of the art space structure in A.P. Potemkin's story "I". Several interrelated spatial models are allocated and described: household space, natural space, social space, psychological space, transpersonal space
Pressure drop and turbulence statistics in transpired pipe flow
Measurements of turbulent flow in a horizontal pipe subjected to wall transpiration are presented. Results include data on global flow rates and pressure drop, and local mean and fluctuating velocity profiles. Two distinct flow transpiration rates are studied, = / = 0.0005 and 0.001. The effects of flow transpiration on the friction-coefficient are compared with theoretical predictions. The theory furnishes predictions accurate to 3\%
Fully Turbulent Mean Velocity Profile for Purely Viscous non-Newtonian Fluids
The characteristic near wall behavior of turbulent flow of purely-viscous non-Newtonian fluids is discussed for both power-law (P.-L.) and Herschel-Bulkley (H.-B.) rheological models. A proper scaling is presented for H.-B. fluids to establish an analogy with power-law fluids with same flow index. To provide reference data for turbulent flow of non-Newtonian fluids, DNS simulations of power-law fluids are conducted in a rectangular channel for a large range of power-law indices ( = 0.5, 0.69, 0.75, 0.9, 1, 1.2). The DNS data show that the mean velocity profile in the viscous and logarithmic layers follow expressions of the form and respectively, where shows a logarithmic dependency on the flow index.Comparison with some experimental data shows the above formulation to be valid for Reynolds numbers (based on shear velocity) as high as 1000
Author Correction: New perspectives on Neanderthal dispersal and turnover from Stajnia Cave (Poland)
The Author contributions section now reads:“W.N., A.N. and S.T. designed research; A.P., M.H., W.N., S.B., M.U., A.M., H.F., M.D.B., P.S., K.S., M.Ż., A.W., A.N. and S.T. performed research; A.P., M.H., W.N., S.B., M.U., A.M., H.F., M.D.B., P.S., K.S., M.Ż., A.W., A.N. and S.T. analysed data; A.P., M.H., S.T., W.N. and S.B. wrote the paper with the collaboration of all the co-authors.
Sub-micron optical waveguides for silicon photonics formed via the local oxidation of silicon (LOCOS)
In this paper we report a novel fabrication technique for silicon photonic waveguides with sub-micron dimensions. The technique is based upon the Local Oxidation of Silicon (LOCOS) process widely utilised in the fabrication of microelectronics components. This approach enables waveguides to be fabricated with oxide sidewalls with minimal roughness at the silicon/SiO2 interface. It is also sufficiently flexible to enable the depth of the oxidised sidewall to be varied to control the polarisation performance of the waveguides.We will present preliminary results on submicron waveguide fabrication and loss characteristics (less than 1 dB/cm), as well as effects of varying waveguide width on modal properties of the waveguides. We consider the ease of fabrication, as well as the quality of the devices produced in preliminary experimental fabrication results, and compare the approach to the more conventional requirements of high resolution photolithographically produced waveguides. We also discuss preliminary optical results, as measured by conventional means. Issues such as the origins of loss are discussed in general terms, as are the fabrication characteristics such as waveguide wall roughness and waveguide profile. We will discuss further work that will help to establish the potential of the technique for future applications
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