1,720,974 research outputs found
EFFECTS OF GROWTH TEMPERATURE ON TDDB CHARACTERISTICS OF N2O-GROWN OXIDES
No full textIn this paper, effects of oxide growth temperature on time-dependent dielectric breakdown (TDDB) characteristics of thin (115 angstrom) N2O-grown oxides are investigated and compared with those for conventional O2-grown SiO2 films with identical thickness. Results show that TDDB characteristics of N2O oxides are strongly dependent on the growth temperature and, unlike conventional SiO2, TDDB properties are much degraded for N2O oxides with an increase in growth temperature. Large undulations at the Si / SiO2 interface, caused by locally retarded oxide growth due to interfacial nitrogen, are suggested as a likely cause of degradation of TDDB characteristics in N2O oxides grown at higher temperatures
MOS CHARACTERISTICS OF NH3-NITRIDED N2O-GROWN OXIDES
No full textIn this paper, a new technique, namely NH3 nitridation of N2O oxides, is proposed and demonstrated to increase nitrogen concentration in N2O oxides so as to improve the resistance to boron penetration, without any adverse effects on electrical and reliability properties. Results show that NH3-nitrided N2O oxides show excellent electrical (low fixed charge) and reliability properties (smaller charge trapping and suppressed interface state generation), with an additional advantage of significantly improved resistance to boron penetration. This technique may have a great impact on deep-submicrometer dual-gate CMOS technology
HIGH-FIELD-INDUCED LEAKAGE IN ULTRATHIN N2O OXIDES
No full textIn this paper, stress-induced leakage current (SILC) is studied in ultrathin (approximately 50 angstrom) gate oxides grown in N2O or O2 ambient, using rapid thermal processing (N2O oxide or control oxide, respectively). MOS capacitors with N2O oxides exhibit much suppressed SILC compared to control oxide for successive ramp-up, constant voltage dc, and ac (bipolar and unipolar) stresses. The mechanism for SILC is discussed and the suppressed SILC in N2O oxide is attributed to the suppressed interface state generation due to the nitrogen incorporation at the Si/SiO2 interface during N2O oxidation
HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT
No full textWe report a detailed study of time-dependent dielectric breakdown (TDDB) in N2O-grown thin (47-120 angstrom) oxides. A significant degradation in breakdown properties (such as charge-to-breakdown, breakdown field) was observed in N2O oxides with increasing oxide growth temperature; a strikingly different dependence than that in pure oxides. A physical model based on undulations at the Si/SiO2 interface is discussed to account for the degradation of breakdown properties for higher N2O oxidation temperature. Accelerated breakdown in N2O oxides for higher operating temperatures and higher oxide fields as well as thickness dependence of TDDB are studied under both polarities of injection. These dependencies are similar to the reported data on pure oxides. Breakdown under unipolar and bipolar stress in N2O oxides is compared with dc breakdown. Unlike the case of pure oxides, an asymmetric improvement in time-to-breakdown under positive versus negative gate unipolar stress is observed, which is attributed to charge detrapping behavior in N2O oxides. A dramatic reduction in time-to-breakdown of N2O oxide is observed under bipolar stress when the thickness is scaled below 60 angstrom. A physical model, based on the thickness dependence of trapped hole centroid, is suggested to explain this behavior. Overall, our results indicate that N2O oxides are expected to show improved breakdown properties than pure SiO2 Over a wide range of operating temperatures, electric fields, oxide thicknesses, as well as under ac stress
Thickness uniformity and electrical properties of ultrathin gate oxides grown in N2O ambient by rapid thermal processing
No full textThickness uniformity of ultrathin (30-100 angstrom) dielectric films grown on 4 in. silicon wafers in pure N2O ambient using a specially designed rapid thermal process reactor is studied. Excellent thickness uniformity in terms of. percentage standard deviation (< 5%) is observed. Metal-oxide-semiconductor capacitors with these thin (approximately 100 angstrom) dielectrics have been fabricated. Results show that N2O oxides exhibit comparable interface state density and slightly larger breakdown field, but significantly reduced interface state generation and charge trapping under constant current stressing compared to oxides grown in pure O2
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS
No full textEffects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated, Surface pretreatments consist of different combinations of HP clean, rapid thermal H-2-Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H-2-Ar clean
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
- …
