179 research outputs found
Two-photon interference from a quantum emitter in hexagonal boron nitride
No full textData from all figures from the article:
C. Fournier, S. Roux, K. Watanabe, T. Taniguchi, S. Buil, J. Barjon, J.-P. Hermier, A. Delteil,
"Two-photon interference from a quantum emitter in hexagonal boron nitride",
Phys. Rev. Applied 19, L041003 (2023).
Fig.1: spectroscopy of the quantum emitter studied in the publication.
Fig. 2: time-resolved photon counting data. (b) Fluorescence decay. (c) Hanbury Brown and Twiss correlations. (d) Hong-Ou-Mandel correlations in parallel and orthogonal configurations.
Fig. 3a: HOM visibility as a function of the time filter width.
Fig. 3b: simulation of the visibility decay as a function of the emitter dephasing time
Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides
No full textComparative analysis of the carrier dynamics of GaN quantum dot (QD) and GaN quantum well (QW) separated confinement heterostructures (SCHs) with low-Al-content AlGaN waveguide layers is reported. A redshift (blueshift) of QD (wetting layer) emission is found with respect to QW emission, as expected from the thickness hierarchy of these objects. The influence of nonradiative processes on QD emission in QD SCH is dramatically reduced compared to the case of QW SCH. It is concluded that GaN QDs in low-Al-content AlGaN matrix are robust localization centers and that the carrier dynamics is seriously affected by the built-in internal field effect. (c) 2006 American Institute of Physics.
La Radiographie appliquée à l'étude des arthropathies déformantes. Du syndrome rhumatismal chronique déformant (étude clinique et anatomique, courbe uroséméiographique), par le Dr F. Barjon,...
No full textContient une table des matièresAvec mode text
Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond
No full textAbstract: The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 mu m thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 mu m h(-1). A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 x 10(16) cm(-3) phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. Published by AIP Publishing
Distinguishing Different Stackings in Layered Materials via Luminescence Spectroscopy
No full textDespite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from "indirect," finite-momentum excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks, and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed
SOUFFLE DE VIE : QUATORZE CANTIQUES POUR L'ANNEE LITURGIQUE / LA CHORALE ALLELUIA ; dir : ABBE REBOUD
No full textComprend : L'ANGE DE DIEU" Vieux choral alsacien / M. FUSTIER, J. BONFILS - O JESUS, QUAND TU T'ABAISSES / P. LOROGIOLA, GOUDIMEL - SOUFFLE DE VIE / J. VERGRIETE, D. JULIEN, R. REBOUD - MYSTERE DU CALVAIRE / ROZIER, D. RIMAUD, J.S. BACH - JE CROIS EN DIEU / CL. ROZIER D. RIMAUD, GOUDIMEL, M. ROSE - SEIGNEUR, JE N'OSE PAS VOUS DIRE / P. PELOT, NEUMARK, J.S. BACH - JE REGARDE VERS LES MONTAGNES / Texte et musique de R. REBOUD - TERRE ENTIERE / J. LECLERCQ, L. DEISS, R. REBOUD - NOUS T'OFFRONS CE PAIN / L. BARJON, J.S. BACH - CHANT DE MARIAGE / J.C. RENARD, R. REBOUD - JOYEUSE LUMIERE / Texte et musique de P. LUCIEN DEISS - VOUS PRENEZ, SEIGNEUR, L'APPARENCE / P. GEGHRE, J.S. BACH - UN PETIT ENFANT EST NE : Mélodie anglaise / Texte et harmonisation de R. REBOUD - HOSANNA, LA SAINTE CROIX / P. DONCOEURBnF-Partenariats, Collection sonore - BelieveContient une table des matière
Alimentation basse tension avec asservissement transistorisé
No full textA low voltage high current (30V, 8A) power supply with a transistorized servomechanism is described. The current delivered is proportionnal to a reference current, the factor of proportionality can be varied, to a certain extent, according the special conditions of the experiment.L'article décrit une alimentation stabilisée basse tension (30V, 8A) avec asservissement transistorisé, destinée à alimenter les lentilles quadrupolaires de focalisation d'un faisceau d'ions de 1 à 3 MeV, le courant de focalisation devant varier proportionnellement à un autre courant (courant de l'aimant analyseur), le facteur de proportionnalité dépendant des conditions spéciales à chaque expérience (distance focale, écartement des lentilles, dimension de la cible, etc...)
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
No full textInternational audienceWith tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References1.R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2.M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3.For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-003
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
No full textInternational audienceWith tremendous physical properties, diamond is considered to be the ultimate semiconductor for high power electronics. Indeed, diamond is awaited to endure high electric fields with low leakage current. It is then a candidate of choice for high voltage and high temperature power electronics. Even if some incursions were made on the (110) orientation, the conventional crystalline orientations used for diamond are (111) and (100). Lying in between, (113) is a stable growth orientation during chemical vapor deposition and could allow obtaining enlarged crystals. For p-type doping with boron, the LSPM lab has proven the interest of the (113) orientation by growing p-type free-standing plates with equivalent quality to (100) orientation and, very recently, enlarged (113) p+-substrates [1]. For n-type doping with phosphorus, the GEMaC lab has shown that the (113) orientation give access to lower compensation ratio than (100) with higher electron mobility [2] at temperature above 450°C. All those results pave the way for the realization (113) diamond bipolar devices. In the framework of the ANR-LAPIN113 project [3], the LAAS lab, specialized in power devices simulation and fabrication, has defined the “ideal” PIN and NIP stacks that might ensure the target breakdown voltage. LSPM and GEMaC labs were then in charge of the synthesis to get requested PIN and NIP structures. Thanks to secondary ion mass spectrometry (SIMS), we analysed the depth-distributions of dopants over each structure. The depth profiles reveal the ability of the grower labs to achieve requested PIN and NIP structures on (113) orientation. The knowledge of the exact doping profiles will allow to simulate diode characteristics and help to understand the future experimental measurements of the diodes that will be performed on the PIN and NIP structures. References1.R. Mesples-Carrère, R. Issaoui, A. Valentin, L. Banaigs, O. Brinza, F. Bénédic, J. achard. Diamond Relat. Mater. 149 (2024), 111659. https://doi.org/10.1016/j.diamond.2024.111659 2.M.-A. Pinault-Thaury, I. Stenger, R. Gillet, S. Temgoua, E. Chikoidze, Y. Dumont, F. Jomard, T. Kociniewski, J. Barjon. Carbon 175 (2021) 254. https://doi.org/10.1016/j.carbon.2021.01.011 3.For information about the ANR-LAPIN113 project see https://anr.fr/Projet-ANR-20-CE05-003
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