10,497 research outputs found
Călătoriile unui romîn ardelean în ţară şi în străinătate : (1835-44)
Călătoriile unui romîn ardelean în ţară şi în străinătate : (1835-44) / de I. Codru Drăguşanu ; cu o prefaţă de N. Iorga. - Ediţie prefăcută în stilul literar de astăzi / de Constantin Onciu. - Vălenii de Munte : Editura Tipografiei Societăţii Neamul Românesc, 1910. - 250 p. : [1] f. il. ; 20 cm
Considerazioni filosofiche su l'Istoriologia umana di N. Jorga
Il saggio esprime alcune considerazioni su N. Iorga complessa figura di storico e di filosofo dell'Europa centro-orientale, ideatore di una sintesionnicomprensiva della storia umana attento alla salvaguardia della singolarità dell'esistenza e concntrato sul tema della vita come categoria fondamentale del processo storic
Portrait of Dymphna Cusack, author [picture]
Condition: Good.; Part of collection: Ion Idriess glass plate negative collection.; Title from signature on image.; Also available in an electronic version via the Internet at: http://nla.gov.au/nla.pic-vn3299415. "My love, Dymphna Cusack 1954"--signature on image
Figuri revoluţionare române : cinci conferinţe ale Universităţii Libere
Bucureşti : Cartea Românească, 1937. - 126 p. ; 24 cm. - (Aşezământul Cultural Ion C. Brătianu ; 36 ). - Cuprinde: Horea, Cloşca şi Crişan / N Iorga ; Avram Iancu / P. P. Panaitescu ; Tudor Vladimirescu / D. Bodin ; Ion Câmpineanu / Al. Lapedatu ; Fraţii Brătianu / N. Bănesc
Nicolae Iorga – memorialist: personalităţi basarabene în viziunea marelui savant [Articol]
Nicolae Iorga is a famous historian, literary critic and memoirist, whose works are known everywhere. The volumes „Oameni cari au fost” represent a masterpiece of our romanian culture and literature, sketching 690 literary portraits. It must be pointed that his books ,,Memorii” evoke the most distinguished personalities of the beginning of the XX-th century from Basarabia, such as: Pantelimon Halippa, Ion Halippa, Nicolae Donici, Ştefan Ciobanu, Constantin Stere and others. The works offer retrospective arguments against Iorga's adversaries and reflect portraits of people who crossed Iorga's path—attributes which are fully suggested by literary critics exploiting Iorga's talents as a ,,polemicist” and ,,portraitist”
Ion Idriess, author, 1953
Ion Idriess, author, sitting at a desk reading his book "Lightning Ridge
MIAMI: Microscope and ion accelerator for materials investigations
A transmission electron microscope (TEM) with in situ ion irradiation has been built at the University of Salford, U.K. The system consists of a Colutron G-2 ion source connected to a JEOL JEM-2000FX TEM via an in-house designed and constructed ion beam transport system. The ion source can deliver ion energies from 0.5 to 10 keV for singly charged ions and can be floated up to 100 kV to allow acceleration to higher energies. Ion species from H to Xe can be produced for the full range of energies allowing the investigation of implantation with light ions such as helium as well as the effects of displacing irradiation with heavy inert or self-ions. The ability to implant light ions at energies low enough such that they come to rest within the thickness of a TEM sample and to also irradiate with heavier species at energies sufficient to cause large numbers of atomic displacements makes this facility ideally suited to the study of materials for use in nuclear environments. TEM allows the internal microstructure of a sample to be imaged at the nanoscale. By irradiating in situ it is possible to observe the dynamic evolution of radiation damage which can occur during irradiation as a result of competing processes within the system being studied. Furthermore, experimental variables such as temperature can be controlled and maintained throughout both irradiation and observation. This combination of capabilities enables an understanding of the underlying atomistic processes to be gained and thus gives invaluable insights into the fundamental physics governing the response of materials to irradiation. Details of the design and specifications of the MIAMI facility are given along with examples of initial experimental results in silicon and silicon carbide
Small microwave ion source for an ion implanter
Three kinds of small 24.5 GHz microwave ion sources have been developed for a middle current implanter. The magnetic fields of the sources are produced by an electromagnetic coil, electromagnetic coil added permanent magnet ring, and permanent magnet rings, respectively. Adopting single-hole accel-decel extraction electrodes with about 5 mA of nitrogen and oxygen, ion current can be extracted from them. The microwave power consumption is about 100-200 W. (C) 1996 American Institute of Physics.Instruments & InstrumentationPhysics, AppliedSCI(E)
Recent ion source development in China
The recent development of various types of ion sources and their application in China is reviewed. Emphasis is given to new improvements of the electron cyclotron resonance ion source; MEVVA ion source, electron beam evaporation metal ion source, compact multicusp ion source, as well as compact negative ion sources with permanent magnets. Some of the new proposals are also presented. (C) 1996 American Institute of Physics.Instruments & InstrumentationPhysics, AppliedSCI(E)
Doubly-charged Negative Ion of C60 Molecule
Within the Dirac- and Lorentz-bubble potential models an electronic structure of the doubly-charged negative ion -2 C has been studied by a variational method. It is s 60 hown that even in the first approximation of this method when a trial wave function of the two electrons is represented as a product of one-electron functions the total energy of the system is negative, a manifestation of the existence of a stable state of the doubly-charged negative ion in these models. The second electron affinity of C60 according to estimation is about ?2 ? 1 eV. The photodetachment cross sections ?(?) of this ion have been calculated as well. Near threshold ?(?) is found to exhibit peculiar and interesting behavior. The first cross section accompanied by the transformation of the doubly-charged negative ion into a singly-charged one is exponentially small near the process threshold. The second cross section corresponds to the photodetachment of a singly-charged ion; it increases at the threshold as a power function of the kinetic energy of the photoelectron. These cross sections are of the same order as the photodetachment cross sections of atomic ions with the same electron affinity
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