86,739 research outputs found
Microelectronics Reliability - SPECIAL ISSUE 23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Cagliari, Italy, 1–5 October 2012
No full textMicroelectronics Reliability - SPECIAL ISSUE 29th EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Aalborg, Denmark, 1–5 October 2018
No full textSpecial issue on reliability of new technologies for power electronics (Si and wide band gap devices, interconnections, passives, analysis and applications): Editorial
No full textAdvanced power cycler with intelligent monitoring strategy of IGBT module under test
No full textPower cycling (PC) test is one of the important test methods to assess the reliability performance of power device modules related to packaging technology, in respect to temperature stress. In this paper, an advanced power cycler with a real-time VCE_ON and VF measurement circuit for the IGBT and diode, which for the wear-out condition monitoring are presented. This advanced power cycler allows to perform power cycling test cost-effectively under conditions close to real power converter applications. In addition, an intelligent monitoring strategy for the separation of package-related wear-out failure mechanisms has been proposed. By means of the proposed method, the wear-out failure mechanisms of an IGBT module can be separated without any additional efforts during the power cycling tests. The validity and effectiveness of the proposed monitoring strategy are also verified by experiments
Expected Life and Failure Model in IGBT Modules under Vibration-Induced Stress: A Case Study
No full textThis article presents a case study on a gel-filled insulated gate bipolar transistor (IGBT) module under mechanical vibration, focusing on its failure mechanism and proposing a life model. First, we used finite element analysis (FEA) with ANSYS to predict the critical stress points, which turned out to be the bond wire feet. Second, we validated these findings to a high degree through experimental tests using a vibrating chamber. In both approaches, a strong correlation is found between the failure rate and the vibration profile, where wear rate increases as one approaches the bond wires' resonance frequency. In experimental tests, all samples happened to fail at the same location, i.e., the upper side foot of terminal bond wires. This result matches the simulation predictions, as these bond wires are the ones with the lowest resonance frequency, hence the closest to the real-world vibrations. A comparison between simulation and experimental results suggest that silicone gel adds to the system a beneficial low-pass behavior that is expected to extend bond wires lifespan
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis
Full text linkThe aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology
Liquid Paste Interconnects on a Silicon Power Diode
No full textState-of-the-art power semiconductors use solid metal interconnects such as wire-bonding, soldering, and sintering. Thermo-mechanical stress degrades these solid metal interconnects and is the main cause of failure in power semiconductors. This letter demonstrates the use of liquid-metals (LMs), which are inherently resistant to thermo-mechanical stress, to package a silicon power diode. The manufacturing process is performed below 80 °C . The thermo-mechanical lifetime is assessed through power cycling and is shown to increase by factor of 3.3x in comparison to SAC305 solder and aluminum wirebonded diodes. In addition, the thermal resistance of LM packaged diodes shows a 9% improvement. Corrosion and pump out of the LM is thought to be the failure mode
Manifold learning by a deep Gaussian process autoencoder
No full textThe paper presents a novel manifold learning algorithm, the deep Gaussian process autoencoder (DPGA), based on deep Gaussian processes. Deep Gaussian process autoencoder algorithm has the following two main characteristics. The former is a bottleneck structure, borrowed by variational autoencoders and the latter is based on the so-called doubly stochastic variational inference for deep Gaussian processes architecture (DSVI). The main novelties of the paper consist in DGPA algorithm and the experimental protocol for evaluating it. In fact, to the best of our knowledge, deep Gaussian processes algorithms have not been applied to manifold learning, yet. Besides, an experimental protocol is introduced, the so-called manifold learning performance protocol (MLPP), to compare quantitatively the geometric preserved properties of manifold learning projections of the proposed deep Gaussian process autoencoder with the ones of state-of-the-art manifold learning algorithms. Extensive experimental tests on eleven synthetic and five real datasets show that deep Gaussian process autoencoder compares favorably with the other manifold learning competitors
Editorial
No full textThis special issue of Microelectronics Reliability contains the
papers presented at the 23rd European Symposium on the Reliability
of Electron Devices, Failure Physics and Analysis, (ESREF 2012)
which was held in Cagliari (Sardinia), Italy, from October 1 to 5,
2012.
Since 1990, ESREF traditionally focuses on the latest research
findings in Quality and Reliability of materials, devices, and circuits
for microelectronics. It provides the annual European forum, where
researchers coming from all over the world present the results of
their researches related to the various aspects of the reliability
management and define the state of the art in advanced analysis
techniques for present and future semiconductor applications,
with a particular attention to specification, technology and manufacturing,
test, control and analysis
Nonlinear dynamics of a wind turbine tower
No full textThe recent diffusion of wind turbines has evidenced problems about their vulnerability in different site conditions, as shown by recent collapse of wind towers after severe actions. The analysis of structures subjected to variable actions can be carried out by means of several methods with different levels of accuracy, among which the nonlinear dynamics is generally recognized as the most reliable one. This paper develops a numerical procedure to obtain approximate solutions for rigid-plastic response of structures subjected to base harmonic pulse. The model is applied to a wind turbine tower subjected to inertia forces generated by an harmonic ground acceleration, in which the failure is assumed depending on the formation of shear hinges. The approach presents the advantages of rigid-plastic procedures, in particular an efficient representation of the post-elastic behaviour of the structure, low computational competence and limited number of mechanical parameters
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