1,721,060 research outputs found
Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
Get PDFSurface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Modeling and characterization of majority (MAJ) type single-elaectron full adder using SIMON
No full textTransistor elektron tunggal (SET) adalah salah satu peranti nano–elektronik bagi menggantikan CMOS yang mana dibezakan dengan saiz perantinya yang sangat kecil dan pelesapan kuasa yang rendah. Ia adalah berdasarkan kepada pengawalan pengangkutan satu elektron. Artikel ini menumpukan kepada pemodelan dan mendapatkan ciri–ciri litar penambah penuh SET jenis majority (MAJ) yang berdasarkan get logik ambang (TLGs). Litar penambah penuh adalah sangat penting kerana berfungsi sebagai unit yang boleh beroperasi dengan sendiri atau sebagai unit asas kepada reka bentuk yang lain seperti unit pembilang program, unit pendarab dan unit pengalamatan ingatan. Untuk memodel dan mendapatkan ciri–ciri litar penambah penuh SET jenis MAJ, beberapa litar lain perlu dimodel dan dianalisis yang terdiri daripada litar peranti SET, litar get TAK SET dan litar get MAJ SET. Semua litar dipercirikan menggunakan pensimulasi SIMON 2.0. Bilangan komponen bagi litar penambah penuh SET jenis MAJ ialah 57, yang terdiri daripada 37 pemuat dan 20 simpang terowong. Litar ini berfungsi seperti yang dikehendaki bagi semua kombinasi voltan masukan. Oleh kerana litar penambah penuh berdasarkan fungsi MAJ, kestabilan litar get TAK SET merupakan aspek penting dalam mereka bentuk MAJ kerana tahap kepekaan litar cenderung kepada nilai penukaran ambang. Untuk mencapai kestabilan, voltan masukan perlu diberi dalam bentuk langkah. Gelombang keluaran litar penambah penuh jenis MAJ ini adalah tetap bagi semua kombinasi masukan kerana nisbah keluaran–masukan (Vo/Vi) adalah lebih tinggi daripada 80% bagi kedua–dua keluaran jumlah (sum) dan pembawa (carry–out)
Low temperature heteroepitaxial growth of 3C-SiC on silicon substrates by triode plasma chemical vapor deposition using dimethylsilane
No full textThe investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200°C. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3-0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals
Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition
Get PDFSurface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100 °C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr
Modeling and Characterization of Majority (MAJ) type Single-Electron Full Adder using SIMON
Get PDFSingle Electron Transistor (SET), distinguished by a very small device size and low power dissipation, is one of the most promising nanoelectronic devices to replace conventional CMOS. It is based on controlling the transport of an individual electron. This paper focuses on the modeling and characterization of majority (MAJ) type SET full adder (FA) which is based on threshold logic gates (TLGs). An adder is very important, both as stand-alone unit and as a basis for other units such as program counters, multipliers, and memory addressing units. To model and characterize MAJ type SET full adder, few other circuits are modeled and analyzed which are single device SET, SET inverter and SET MAJ gate circuits. All the circuits are characterized using SIMON 2.0 simulator. The number of components for a MAJ type SET full adder circuit is 57 which consist of 37 capacitors and 20 tunnel junctions. The circuit is functioning as required for all the combination of input voltage. Since the full adder model is based on MAJ function, the stability of the SET inverter is an important aspect of the MAJ design because of the sensitivity of circuit tends to switch threshold value. In order to achieve stability, the input voltage must be in step function. The output waveform for this MAJ type FA is regular for all the combinations of inputs since the output–input (Vo/Vi) ratios is higher than 80% for both sum and carry–out outputs
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
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