324,004 research outputs found
Raphaëlle de Groot : En exercice
No full text"This publication was produced by the Galerie de l’UQAM as part of an exhibition which took place from February 24 to April 1, 2006. The essay by Louise Déry presents the work site of Raphaëlle de Groot, who extended her original inquiry into the figure and roles of the artist by literally “exercising” in front of the exhibition’s visitors. The author also describes a vast project at the Cerutti textile factory in Biella, Italy, carried out by the artist during a residency at the Pistoletto Foundation in Biella. Yann Pocreau contributes an exercise in temporal writing modelled on the work of the artist, whose own texts, also presented here, are an essential complement to this volume." -- Publisher's websit
Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
No full textVertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface
Dataset: RDF and TID simulation of PDSOI 45nm MOSFET
No full textDataset supporting:
Chatzikyriakou, Eleni, Redman-White, William and De Groot, Kees (2016) Total Ionizing Dose, Random Dopant Fluctuations and its combined effect in the 45 nm PDSOI node. Microelectronics Reliability.</span
Going Beyond Counting First Authors in Author Co-citation Analysis
No full textThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Dispelling the Myths Behind First-author Citation Counts
No full textWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
Dataset for 'Nanoscale modeling of electro-plasmonic tunable devices for modulators and metasurfaces'
No full textDatapoints of the published graphs in:
Riedel, C., De Groot, C., Muskens, O., and Sun, K. (2017). Nanoscale modeling of electro-plasmonic tunable devices for modulators and metasurfaces. Optics Express.</span
A Vertical Transport Geometry for Electrical Spin Injection and Extraction in Si
No full textSchottky barriers formed between ferromagnetic metal and Semiconductor are of particular interest for spin injection and detection experiments. Here, we investigate electrical spin polarized carrier injection and extraction in Si using a Co/Si/Ni vertical structure built on a 250 nm thick Si membrane. Current-voltage measurements performed on the devices at low temperatures showed evidence of the conduction being dominated by thermionic field emission, which is believed to be the key to spin injection using Schottky junctions. This, however, proved inconclusive as our devices did not show any magnetoresistance signal even at low temperatures. We attribute this partially to the high resistance-area product in our Schottky contacts at spin injection biases. We show the potential of this vertical Spin-device for future experiments by numerical simulation. The results reveal that by growing a thin highly doped Ge layer at the Schottky junctions the resistancearea products could be tuned to obtain high magnetoresistance
Local Clusters in Global Value Chains : A case study of wood furniture clusters in Central Java (Indonesia)
No full textRietveld, P. [Promotor]Masurel, E. [Promotor]Groot, H. de [Copromotor
Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode
No full textWe report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the depletion region. This scatters the electrons into the upper valley of the Ge conduction band, which has a lower mobility. The observed negative differential conductance is hence attributed to the transferred-electron effect. This shows that Schottky contacts can be used to create hot electrons for transferred-electron devices
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