177,254 research outputs found
Dependence of photoluminescence induced by carbon contamination on GeSi structure
No full textWe studied the dependence of photoluminescence induced by carbon contamination on the Ge/GeSi structure. It is found that a carbon and silicon defect complex may be formed in a special structure by opening the in situ high-energy electron diffraction test during growth. There is an important difference in the dependence of photoluminescence on the temperature between the defect complex in our samples and in bulk Si. where the impurity-active center is generated by high-energy electron (about several MeV) irradiation. The quenching temperature of the photoluminescence from the impurity-active center is higher in our Ge/GeSi structure than in bulk Si. The defect complex may serve as an impurity-active center for a possible application in making Si-based light-emitting diodes whose wavelength is around 1.3 mu m in the window of optical communication. (C) 1998 Elsevier Science B.V. All rights reserved
Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)
No full textMorphology of self-assembled GeSi quantum dot grown on Si(113) by Si molecular beam epitaxy has been studied by transmission electron microscopy and atomic force microscopy. Photoluminescence from the as-grown sample and annealed sample was studied. The results were analyzed and explained
Propagation of Dislocations Through GeSi/Si Strained Layers and Superlattices
No full textAbstractWe describe in-situ transmission electron microscope observations of the relaxation of strained layer GeSi/Si epitaxy. Dynamic observations of misfit dislocations in these structures reveal that dislocation nucleation and growth activation barriers, as well as interactions, limit the rate at which strain is relieved. The equivalence of threading and misfit dislocations in this system is demonstrated. Extension of the principles learnt from these single layer experiments to threading dislocation propagation through multilayer structures, enables us to understand the relative inefficiency of GeSi/Si strained layer superlattices in blocking threading dislocations.</jats:p
Appropriate Similarity Measures for Author Cocitation Analysis
No full textWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
No full textWe have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved
Influence of preparation conditions on structure and photosensing properties of GeSi/TiO<inf>2</inf> multilayers
No full textThe photosensing properties related to the structure of GeSi/TiO2 multilayers prepared under different conditions are studied. TiO2 cap/(GeSi/TiO2)2 multilayers (ML) were deposited by magnetron sputtering (MS) and annealed by rapid thermal annealing. Trilayers of TiO2 cap/GeSi/TiO2 (TL) were also deposited using reactive high power impulse MS (HiPIMS) for TiO2 layers and dc MS for the GeSi layer. For TL samples a two-step annealing was employed, one before and the second after depositing TiO2 cap. Structure and morphology characterization (X-ray diffraction, scanning and transmission electron microscopy) was carried out and photocurrent measurements (voltage dependences, spectral curves) were performed. The annealed ML samples are formed of GeSi NCs with 5-10 nm sizes, while in the annealed TL samples, the GeSi NCs are larger (20-30 nm). These morphologies determine the multilayers photosensing properties in VIS-NIR of ML structures and in UV in TL ones, respectively.</p
Recommended from our members
Stress relaxation in sputtered W films and W/GeSi/Si heterostructures
No full textWe have investigated stress relaxation in GeSi/Si heterostructures on which thin W films have been sputtered with different stress states. Real-time electron microscope observations of the relaxation process demonstrate that the presence of the stressed metal film changes the relaxation kinetics of the GeSi/Si heterostructures. We discuss the significance of this result for the processing of strained layer heterostructures into devices. We have investigated the relationship between microstructure and stress in these sputtered W films, and, by developing a novel specimen geometry for the transmission electron microscope (TEM), we present dynamic observations of the evolution of microstructure and stress during the {beta}-W{yields}{alpha}-W transformation
Ion Irradiation of GeSi/Si Strained-Layer Heterostructures
No full textAbstractThe strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increasing ion fluence for both low (projected range of ions within the alloy layer) and high energy (projected range of the ions greater than alloy thickness) irradiation. In contrast, elevated temperature irradiation results in an increase in strain for low-energy irradiation, but a decrease for high-energy irradiation. For example, strain relaxation is observed in layers irradiated with I MeV 28Si+ at 253 °C. During subsequent annealing to 750 °C, the strain is partially recovered but relaxes again at temperatures > 750°C. This behavior is shown to be consistent with the evolution of intrinsic (vacancy-type) defects within the alloy layer.</jats:p
Fascial components of the myofascial pain syndrome.
No full textMyofascial pain syndrome (MPS) is described as the muscle, sensory, motor, and autonomic nervous system symptoms caused by stimulation of myofascial trigger points (MTP). The participation of fascia in this syndrome has often been neglected. Several manual and physical approaches have been proposed to improve myofascial function after traumatic injuries, but the processes that induce pathological modifications of myofascial tissue after trauma remain unclear. Alterations in collagen fiber composition, in fibroblasts or in extracellular matrix composition have been postulated. We summarize here recent developments in the biology of fascia, and in particular, its associated hyaluronan (HA)-rich matrix that address the issue of MPS
"Closing the R&D Gap, Evaluating the Sources of R&D Spending"
No full textBoth spending and tax policies have been implemented in the United States with the goal of stimulating private sector research and development (R&D). Karier questions whether current R&D policy, especially the research and experimentation tax credit, can contribute to closing the gap between nondefense expenditures on R&D in the United States and such expenditures in other countries, such as Japan and Germany. He also explores possible changes to our current R&D policy to make it more effective.
- …
