4 research outputs found
Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields
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75573.pdf (Publisher’s version ) (Open Access
High Electron Mobility InN
No full textIrradiation of InN films with 2 MeV He+ ions followed by thermal annealing below 500 °C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility
Electronic and excitonic properties of self-assembled semiconductor quantum rings
No full textContains fulltext :
75794.pdf (Publisher’s version ) (Open Access
