32,850 research outputs found
Dalian ge wu tuan.
No full textPerforming group: 大連歌舞團.Live recording."8/20/82"--Spine label."1982 original"--Spine label.Electronic reproduction from Rulan Chao Pian VHS collection.Sung in Chinese ; with Japanese interpreting of program introduction.Performing group: Dalian ge wu tuan
Chuan shang ge wu biao yan
No full text1. 山峽風景 -- 2. 過運河 -- 3. 沿岸風景 -- 4. 春光美 : 女聲演唱 -- 5. 跳舞 -- 6. 流行歌表演.86. VIII, 山峽 -- 86. VIII, 船上歌舞表演.Detailed contents in vernacular field only.86. VIII, Shan xia -- 86. VIII, Chuan shang ge wu biao yan.Second title supplied by cataloguer.Live recording.Electronic reproduction from Rulan Chao Pian V8 collection.Performers, unknown.Sung and spoken in Chinese
Bian zhong yue wu
No full textSide A. 1. 荊楚雄風 ; 2. 橘頌 ; 3. 國殤 -- Side B. 1. 迎神 ; 2. 農事組舞 : 採桑 ; 耕耘 ; 3. 房中樂 : 關雎 ; 慷慨歌.湖北省歌舞團 ; 中央人民廣播電台專題音樂節目.Title supplied by cataloguer.Radio broadcast (Pending for review)"王大俊8/28/85"--Side 1 label.Electronic reproduction from Rulan Chao Pian Audio Cassette Collection.Program: 中央人民廣播電台.Performers: 湖北省歌舞團.Sung and spoken in Chinese.Hubei Sheng ge wu tuan ; Zhong yang ren min guang bo dian tai zhuan ti yin yue jie mu."Wang Dajun 8/28/85"--Side 1 label.Program: Zhong yang ren min guang bo dian tai.Performers: hu bei sheng ge wu tuan.Detailed contents in vernacular field only
Fabrication and characterisation of novel Ge MOSFETs
No full textAs high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel material in MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). Germanium is a good candidate as it has higher bulk carrier mobilities than silicon. In addition, Si and Ge form a thermodynamically stable SiGe alloy of any composition, allowing Ge to be implemented as a thin layer on the surface of a standard Si substrate. This thesis is a practical investigation on several aspects of Ge CMOS technology.
High-k dielectric Ge p-MOSFETs are electrically characterised. A large variation in interface state densities is demonstrated to be responsible for a threshold voltage shift and this is proportional to reciprocal peak mobility due to the Coulomb scattering of carriers by charged states. A theoretical mobility is fitted to that measured at 4.2 K and confirms that interface states are the main source of interface charged impurities.
The model demonstrates a reduction in the interface charged impurity density in p-MOSFETs that underwent a PMA (Post Metallisation Anneal) in hydrogen atmosphere and that the anneal also reduces the RMS (Root Mean Square) dielectric/semiconductor interface roughness, from an average of 0.60 nm to 0.48 nm.
High-k strained Ge p-MOSFETs are electrically characterised and have peak mobilities at 300 K (470 cm2 V-1 s-1) and 4.2 K (1780 cm2 V-1 s-1) far in excess of those measured for the unstrained Ge p-MOSFETs (285 cm2 V-1 s-1,785 cm2 V-1 s-1 respectively). Strained Ge n-MOSFETs perform significantly worse than standard Si P, - MOSFETs primarily due to a high source/drain resistance.
A 10 nm thick SiGe-01 (On Insulator) layer with a Ge composition of 58% is obtained from a 55 nm Si0_88Ge1o2. initial layer on 100 nm Si-Ol substrate via the germanium condensation technique. For the first time, germanium is demonstrated to diffuse through the BOX (Buried OXide) during Ge-condensation and into the underlying Si substrate. An order of magnitude increase in the calculated ITOX (Internal Thermal OXidation) rate of the BOX in the final stages of Ge-condensation is hypothesised to be responsible for stopping this diffusion
The English Translation of the Epitaph of the Wu Kingdom Transcendent Duke Ge of the Left Palace of the Grand Bourne by Tao Hongjing
No full textabstract: This thesis is a translation and analysis of the “Epitaph of the Wu Kingdom
Transcendent Duke Ge of the Left Palace of the Grand Bourne” (Epitaph below). The author was Tao Hongjing (456 CE-536 CE). The subject of this Epitaph inscribed on a stele was Ge Xuan (trad. 164 CE-244 CE). Ge Xuan had two titles attributed to him by later Daoists. According to the Lingbao scriptures, Ge was appointed by the Perfected of Grand Bourne, a heavenly title. Later, in the Shangqing scriptures, Ge Xuan was said to be an earthly transcendent without any heavenly appointment. This debate occurred before Tao Hongjing began to write. This stele epitaph is essential, as it records sayings from both Lingbao and Shangqing scriptures. By reading this translated epitaph, scholars can know more about different versions of Ge Xuan's legend, as well as how Ge Xuan's legend was constantly rewritten by later Daoists.Dissertation/ThesisMasters Thesis Religious Studies 202
Tian xiang ge ji
No full text李介撰.Date from preface.框13.1 x 9.1 cm., 9行21字, 黑口, 左右雙邊, 無魚尾, 版心中鐫分冊書名, 下鐫叢書名.Li Jie zhuan ; [Wu Chongyao ji]Kuang 13.1 x 9.1 cm., 9 xing 21 zi, hei kou, zuo you shuang bian, wu yu wei, ban xin zhong juan fen ce shu ming, xia juan cong shu ming
He shan chun xiao: si mu wu chang xi ju.
No full text吳鐵翼著.附錄(p. 157-160): 易君左作主題歌.Wu Tieyi zhu.Fu lu (p. 157-160): Yi Junzuo zuo zhu ti ge
Correcting Things as Correcting Feelings: A Phenomenological Study of Wang Yang-ming’s Doctrine of Ge-Wu
No full textThis article is designed to offer a phenomenological reading of Wang Yang-ming’s (王陽明) doctrine of ge-wu (格物), which, as a part of Wang radical reading of The Great Learning (Da-Xue 大學), distinguishes his doctrine from that of Zhu Xi (朱熹). Wang argues that ge-wu, as rectifying things, is the same process with the act of cheng-yi (誠意), in which yi (意) and wu (物) form a relation of intentionality in Edmund Husserl’s sense. Since for Wang, what can be made sincere are emotional yi such as liking and disliking, Husserl\u27s phenomenology on emotional intentionality will be used in this article. The emotional intentionality is the unity of emotional noeses and valued noemata. For Wang, ge-wu is to change a wu improperly valued into a proper one, which is the same process of rectifying an immoral yi into a moral one
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