6,150 research outputs found
Roger Abrahams, author
No full textRoger Abrahams, director of the African and Afro-American Research Institute at the University of Texas-Austin and author of Positively Black, argues the case for ethnic diversity in this interview. He also discusses that the idea of "new ethnicity" is not restricted to black or brown America and he sees a widespread return to old mores inherent in the traditional ethnic value system. Interviewed by WTMJ-TV host Jim Peck.GrayscaleSoun
Unlucky for Some : 13 poems by Roger McGough
No full textInspired by and featuring the poetry of Roger McGough (by permission of the author), Unlucky for Some is a spare, minimalistic work about homelessness, mental illness and class division performed entirely in slow motion.\ud
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This multimedia work also utilised prerecorded and live feed video and music, and experimented with synchronous and asynchonous live and mediatised performance
Dr. Glendon Swarthout
No full textHosted by Roger M. Busfield, MSU Assistant Professor of Speech and Theater, Meet the Author is designed to introduce a general audience to a contemporary author and their work through in-depth interviews. This episode features a conversation between Dr. Glendon Swarthout, prolific author and English professor at MSU, and assistant professors Sam S. Baskett and Theodore B. Strandness
A Conversation with Roger Welsch
No full textIn this session, moderated by Barre Toelken and William A. "Bert" Wilson, audience members have the opportunity to discuss Roger Welsch's plenary lecture, and his other works and ideas, with the author
Structure de Mn Si N2 et Mn Ge N2
No full textMaunaye Marcel, Marchand Roger, Guyader Jean, Laurent Yves, Lang Jean. Structure de Mn Si N2 et Mn Ge N2. In: Bulletin de la Société française de Minéralogie et de Cristallographie, volume 94, 5-6, 1971. pp. 561-564
Spoken language reference materials
No full textContent of the CD distributed with the Handbook of Standards and Resources for Spoken Language Systems. Edited by Dafydd Gibbon, Roger Moore, Richard Winski. Published by Mouton de Gruyter, 1997
Source/Drain Materials for Ge nMOS Devices : Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx
No full textThis paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable source/drain candidates for Ge nMOS devices. Si:P grown at low temperature on Ge, gives an active carrier concentration as high as 3.5 x 10(20) cm(-3) and a contact resistivity down to 7.5 x 10(-9) Omega.cm(2). However, Si:P growth is highly defective due to large lattice mismatch between Si and Ge. Within the material stacks assessed, one option for Ge nMOS source/drain stressors would be to stack Si:P, deposited at contact level, on top of a selectively grown n-SiyGe1-x-ySnx at source/drain level, in line with the concept of Si passivation of n-Ge surfaces to achieve low contact resistivities as reported in literature (Martens et al. 2011 Appl. Phys. Lett., 98, 013 504). The saturation in active carrier concentration with increasing P (or As)-doping is the major bottleneck in achieving low contact resistivities for as-grown Ge or SiyGe1-x-ySnx. We focus on understanding various dopant deactivation mechanisms in P-doped Ge and Ge1-xSnx alloys. First principles simulation results suggest that P deactivation in Ge and Ge1-xSnx can be explained both by P-clustering and donor-vacancy complexes. Positron annihilation spectroscopy analysis, suggests that dopant deactivation in P-doped Ge and Ge1-xSnx is primarily due to the formation of P-n-V and SnmPn-V clusters. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.Peer reviewe
Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and DFT calculations
No full textThe Si 2p and Ge 3d core-levels are investigated on the c(4×2) reconstructed surfaces of Si(001)and Ge(001), respectively. Calculated surface core-level shifts are obtained both with and withoutfinal state effects included. Significant core-level shifts are found within the four outermost atomiclayers. A combination of the theoretical results and high-resolution photoemission data facilitatea detailed assignment of the atomic origins of the various components identified in the core-levelspectra of both Si(001) and Ge(001).Original Publication:Johan Eriksson and Roger Uhrberg, Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and DFT calculations, 2010, Physical Review B. Condensed Matter and Materials Physics, (81), 12, 125443.http://dx.doi.org/10.1103/PhysRevB.81.125443Copyright: American Physical Societyhttp://www.aps.org
Conservative philosopher Roger Scruton delivers last of 'Democracy and Moral Conviction' lectures
No full textIncludes descriptive metadata provided by producer in MP3 file: "Listen to Roger Scruton, author of The Meaning of Conservatism and Arguments for Conservatism, lecture on 'Freedom of Religion' at Vanderbilt Law School on April 16, 2007. The lecture was the fourth and last of the 'Democracy and Moral Conviction' lecture series.
Hart (A. Tin dal). William Lloyd, bishop, politician, author and prophet, 1627-1717.
No full textAubert Roger. Hart (A. Tin dal). William Lloyd, bishop, politician, author and prophet, 1627-1717.. In: Revue belge de philologie et d'histoire, tome 33, fasc. 4, 1955. pp. 967-969
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