8,634 research outputs found
Fabrication and characterisation of novel Ge MOSFETs
No full textAs high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel material in MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). Germanium is a good candidate as it has higher bulk carrier mobilities than silicon. In addition, Si and Ge form a thermodynamically stable SiGe alloy of any composition, allowing Ge to be implemented as a thin layer on the surface of a standard Si substrate. This thesis is a practical investigation on several aspects of Ge CMOS technology.
High-k dielectric Ge p-MOSFETs are electrically characterised. A large variation in interface state densities is demonstrated to be responsible for a threshold voltage shift and this is proportional to reciprocal peak mobility due to the Coulomb scattering of carriers by charged states. A theoretical mobility is fitted to that measured at 4.2 K and confirms that interface states are the main source of interface charged impurities.
The model demonstrates a reduction in the interface charged impurity density in p-MOSFETs that underwent a PMA (Post Metallisation Anneal) in hydrogen atmosphere and that the anneal also reduces the RMS (Root Mean Square) dielectric/semiconductor interface roughness, from an average of 0.60 nm to 0.48 nm.
High-k strained Ge p-MOSFETs are electrically characterised and have peak mobilities at 300 K (470 cm2 V-1 s-1) and 4.2 K (1780 cm2 V-1 s-1) far in excess of those measured for the unstrained Ge p-MOSFETs (285 cm2 V-1 s-1,785 cm2 V-1 s-1 respectively). Strained Ge n-MOSFETs perform significantly worse than standard Si P, - MOSFETs primarily due to a high source/drain resistance.
A 10 nm thick SiGe-01 (On Insulator) layer with a Ge composition of 58% is obtained from a 55 nm Si0_88Ge1o2. initial layer on 100 nm Si-Ol substrate via the germanium condensation technique. For the first time, germanium is demonstrated to diffuse through the BOX (Buried OXide) during Ge-condensation and into the underlying Si substrate. An order of magnitude increase in the calculated ITOX (Internal Thermal OXidation) rate of the BOX in the final stages of Ge-condensation is hypothesised to be responsible for stopping this diffusion
Xun zhao yu zhou can shu de ge xiang yi xing
No full textChan, King Pak Keven = 尋找宇宙參數的各向異性 / 陳景柏.Thesis Ph.D. Chinese University of Hong Kong 2015.Includes bibliographical references (leaves 104-107).Abstracts also in Chinese.Title from PDF title page (viewed on 29, September, 2016).Chan, King Pak Keven = Xun zhao yu zhou can shu de ge xiang yi xing / Chen Jingbo
High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs
No full textSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to 5 orders in magnitude. At low forward biases the overlap of the forward current density curves for the as deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge band gap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
No full textIn recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy metallisation technique offers numerous advantages over the physical vapour deposition techniques. Electrical characteristics of the grown diodes show a high quality rectifying behaviour with extremely low leakage currents even on highly doped Ge. A non-Arrhenius behaviour of the temperature dependence is observed for the grown Ni/Ge diodes on lowly doped Ge that is explained by a spatial variation of the barrier heights. The inhomogeneity of the barrier hights is explained in line with an intrinsic surface states model for Ge. The understanding of the intrinsic surface states will help to create ohmic contacts for doped n-MOSFETs. NiGe were formed single phase by annealing. Results reveal that by using these high-quality germanide Schottky barriers as the source/drain, the subthreshold leakage currents of a Schottky barrier MOSFET could be minimised, in particular, due to the very low drain/body junction leakage current exhibited by the electrodeposited diodes. The Ni/Ge diodes on highly doped Ge show negative differential conductance at low temperature. This effect is attributed to the intervalley electron transfer in Ge conduction band to a low mobility valley. The results show experimentally that Schottky junctions could be used for hot electron injection in transferred-electron devices. A vertical Co/Ni/Si structure has been fabricated for spin injection and detection in Si. It is shown that the system functions electrically well although no magnetoresistance indicative of spin injection was observed
Liu shi gong hui zhua sheng chan cu ge ming
No full text《三忠于》红卫兵揪刘尖兵绘画.文字: 刘氏工会 抓生产促革命;下款: 《三忠于》红卫兵揪刘尖兵绘画 一九六七年二月十三日; 印記: 忠于毛主席 忠于毛泽东思想 忠于毛主席的革命路线.裝裱後高寬: 143 x 38 cm.Title devised by cataloguer."San zhong yu" hong wei bing jiu Liu jian bing hui hua.Wen zi : Liu shi gong hui zhua sheng chan cu ge ming; Xia kuan : "San zhong yu" hong wei bing jiu Liu jian bing hui hua 1967 nian 2 yue 13 ri; Yin ji : zhong yu Mao zhu xi zhong yu Mao Zedong si xiang zhong yu Mao zhu xi de ge ming lu xian.Zhuang biao hou gao kuan : 143 x 38 cm
Marianne Chan: 47th Annual ODU Literary Festival
No full textMarianne Chan grew up in Stuttgart, Germany, and Lansing, Michigan. She is the author of All Heathens (Sarabande Books, 2020), which was the winner of the 2021 GLCA New Writers Award. Her second collection, Leaving Biddle City, was published from Sarabande Books in July of this year. Her poems have appeared in Poetry, Best American Poetry, New England Review, Kenyon Review, Michigan Quarterly Review, and elsewhere. She is an assistant professor of creative writing at Old Dominion University and teaches poetry in the Warren Wilson College MFA program for Writers
Inauguración del XXIII Simposio Román Piña Chan. Zonas Arqueológicas en Contextos Urbanos. <p>XXIII Simposio Román Piña Chan.Zonas Arqueológicas en Contextos Urbanos<p>
No full textEl acto inaugural del XXIII Simposio Román Piña Chan “Zonas arqueológicas en contextos urbanos”, tuvo lugar el 6 de noviembre de 2018, en la Escuela Nacional de Antropología e Historia (ENAH). El Simposio fue inaugurado por el Antrop. Diego Prieto Hernández, Director General del Instituto Nacional de Antropología e Historia, en compañía de otras autoridades del INAH así como investigadores, docentes, alumnos y público en general.</p
높은 산소이온 이동성을 가지는 전해질 비스무트 칼슘 철산화물
No full textDisclosed herein are electrolyte bismuth calcium ferrites having high oxygen vacancy ion mobility. There can be provided an oxygen vacancy electrolyte material including bismuth calcium ferrites (Bi1-xCaxFeO3-δ)
Anyuon Chan
No full textabstract: Anyuon left his village in 1989 during the middle of the night.
“Lost Boys Found” is an ongoing, interdisciplinary project that is collecting, recording and archiving the oral histories of the Lost Boys/Girls of Sudan. The collection is a work-in-progress, seeking to record the oral history of as many Lost Boys/Girls as are willing, and will be used in a future book.Age: 22Region: Bahr al GhazalThis picture and bio was donated to the Lost Boys Found project from The Arizona Lost Boys Cente
Ling shu bao chan hei shen dan
No full text[竹林寺僧撰 ; 邊繼孝校刊].綫裝.框18.3x12.7公分, 10行20字. 白口, 左右雙邊, 單黑魚尾. 版心上鐫題名, 中鐫卷次及小題, 下鐫葉次.書名頁刻"光緖乙未冬日錫山邊氏刊于海上, 上海文瑞樓書莊發行". 又有紅色戳記"蘇州綠蔭堂福記精造書籍章".前有民國四年[1915]陳洙序云此書刻印之事.每卷末刻"無錫邊繼孝校刊". 附文末又刻"山陰陳鉅堃又笙謹識, 龍山邊繼孝望先補刊".有民國艮初墨筆跋及評語.附: 靈樞保產黑神丹.鈐"莊兆祥印"朱, 白文各一方.Xian zhuang.Kuang 18.3 x 12.7 gong fen, 10 hang 20 zi. Bai kou, zuo you shuang bian, dan hei yu wei. Ban xin shang juan ti ming, zhong juan juan ci ji xiao ti, xia juan ye ci.Detailed notes in vernacular field only.Detailed notes in vernacular field only.Detailed notes in vernacular field only.Detailed notes in vernacular field only.[Zhu lin si seng zhuan ; Bian Jixiao jiao kan].Fu: Ling shu bao chan hei shen dan.Qian "Zhuang Zhaoxiang yin" zhu, bai wen ge yi fang
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