1,721,502 research outputs found
Development of a Silicon Vertex and Tracking Detector for the Electron-Ion Collider
Full text linkThe Electron-Ion Collider being built at the Brookhaven National Laboratory will further the study of Quantum Chromodynamics via a rich science programme enabled by high luminosity, high energy collisions of electrons with protons and ions. The ePIC detector is being developed to be the first EIC experiment, ready for data taking in the early/mid 2030s. The innermost element of the ePIC detector is a high resolution Silicon Vertex Tracker able to provide precise measurements of primary and secondary vertices and of particles momentum. This paper will present the ePIC Silicon Vertex Tracker geometry and its performance evaluated in simulations, and will give a brief overview of the ongoing R&D towards high granularity and ultra thin detector layers
Towards minimum material trackers for high energy physics experiments at upgraded luminosities
No full textReducing material in silicon trackers is of major importance for a good detector performance overall, and poses a big challenge in the development of the detectors. To match the low material desirable for trackers in High Energy Physics experiments at upgraded luminosities, special techniques have to be developed to address the main sources of material, i.e. mechanical structure and services, and to prevent new significant contributions to the detector material coming for instance from larger Front-End chips. In this framework three methods are developed to reduce the material added by services and electronics: (1)serial powering, (2) light weight aluminum flex cables and Through Silicon Vias, and (3) thin Front-End chips. The methods are presented in this paper using the upgrades of the ATLAS pixel detector as an example of application. (C) 2010 Elsevier B.V. All rights reserved
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
The shunt-LDO regulator to power the upgraded ATLAS pixel detector
No full textThe shunt-LDO regulator is a new regulator concept which combines a shunt and a Low Drop-Out (LDO) regulator. Designed as an improved shunt regulator to match the needs of serially powered detector systems, it can also be used as a pure LDO regulator for general application in powering schemes requiring linear regulation. The flexibility of the design makes the shunt-LDO regulator a good candidate for use in the powering schemes envisaged for the upgrades of the ATLAS pixel detector. Two shunt-LDO regulators integrated in the prototype of the next ATLAS pixel front-end chip, the FE-I4A, are used to demonstrate the feasibility of the proposed powering solutions
Measurements of proton hardness factors in silicon at energies between 10 MeV and 25 MeV
No full textSilicon detector technologies are often employed for high energy particle physics applications due to their excellent radiation hardness. Radiation damage in the form of bulk or substrate damage is dependent on the incident particle species and energy. The fluence is therefore often quoted as the 1 MeV neutron equivalent fluence, with hardness factors being the scaling quantity. The hardness factor can be determined by analysing the change in the leakage current of silicon pad diodes post-irradiation. Using the MC40 cyclotron facility at the University of Birmingham, n-in-p FZ silicon pad diodes were irradiated to several fluence points at three different proton beam energies. The hardness factors acquired were 3.07 ± 0.37 for 10.5 MeV protons, 2.73 ± 0.27 for 16.4 MeV protons and 2.19 ± 0.22 for 24.3 MeV protons. The value for 16.4 MeV protons agrees with the theoretical predictions, whereas the values for 10.5 MeV and 24.3 MeV are lower than predicted by the same calculations
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs
No full textWe investigate how X-ray exposure impact the long term reliability of 130-nm NMOSFETs as a function of device geometry and irradiation bias conditions. This work focuses on electrical stresses on n-channel MOSFETs performed after irradiation with X-ray up to 136 Mrad(SiO2) in different bias conditions. Irradiation is shown to negatively affect the degradation during subsequent hot carrier injection. Increasing the bias during irradiation slightly reduces the impact on following electrical stress in core MOSFETs. Through device simulations, we attribute these effects to an enhanced impact ionization at the bulk-STI interfaces due to radiation-induced trapped charge and defects
Radiation Effects on the 1/f Noise of Field-Oxide Field Effect Transistors
No full textLow-frequency (1/f) noise measurements were performed at room temperature as a function of gate bias on Field-Oxide Field Effect Transistors (FOXFETs) that were irradiated with 10-keV X-rays and then annealed at room temperature. The resulting oxide-trap and interface-trap charge densities were estimated by the midgap charge separation technique. Some devices also were exposed to 85% relative humidity at 130 degrees C for three days after irradiation and annealing. Effective border trap densities were estimated from noise measurements in each case. The noise magnitude increases after irradiation and decreases first during annealing and then even more significantly after moisture exposure. The post-humidity-exposure noise for the irradiated devices is well below the pre-irradiation noise for these devices and experimental conditions. The increased noise due to irradiation is attributed to 0 vacancies and hydrogen bridge (Si-H-Si) defects in the near-interfacial field oxide. The reduction in noise with room-temperature annealing and humidity exposure is due to a combination of thermal and tunnel annealing processes and defect passivation reactions involving water
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs
No full textWe investigate how X-ray exposure impact the long term reliability of 130-nm NMOSFETs as a function of device geometry and irradiation bias conditions. This work focuses on electrical stresses on n-channel MOSFETs performed after irradiation with X-ray up to 136 Mrad(SiO2) in different bias conditions. Irradiation is shown to negatively affect the degradation during subsequent hot carrier injection. Increasing the bias during irradiation slightly reduces the impact on following electrical stress in core MOSFETs. Through device simulations, we attribute these effects to an enhanced impact ionization at the bulk-STI interfaces due to radiation-induced trapped charge and defects
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