1,721,006 research outputs found
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI
Analysis of the impact of rear side geometry on performance of back-contact back-junction solar cells
n this work, we performed a study of rear side geometry of a back-contact back-junction solar cell parameters: the emitter, the back surface field (BSF) and their gap distance by exploiting two-dimensional TCAD numerical simulations. All figures of merit have been considered in order to understand the impact of the dominant ones. Higher efficiency are lead by higher emitter width/pitch ratios, lower pitches, and minimum BSF and gap widths. The impact of emitter is explained in terms of lower recombination in bulk due to a larger p-n junction, the impact of BSF and gap dimensions are explained in terms of surface recombination losses at back interface and the impact of pitch in terms of higher series resistance
Fast light switching in an a-SI:H-based micro-optic device for fiber-in-the-loop applications
a-Si waveguides and light modulators for integrated photonics realized by low-temperature plasma enhanced chemical vapour deposition.
A new amorphous silicon waveguide is realized by use of amorphous silicon carbon as cladding material. The structure is characterized both experimentally and theoretically, and its application for optical interconnections in photonic integrated circuits on silicon motherboards is proposed. The fabrication process is based on low-temperature (220°C) plasma-enhanced chemical-vapor deposition and is compatible with standard microelectronic processes. Propagation losses of 1.8 dB/cm have been measured at the fiber-optic wavelength of 1.3 μm. A strong thermo-optic coefficient has been measured in this material at this wavelength and exploited for the realization of a light-intensity modulator based on a Fabry—Perot interferometer that is tunable by temperature
Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode Jfet Structure
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