1,720,994 research outputs found
Thermo-mechanical analysis of microstructures for chemoresistive gas sensors
No full textThe thermo-mechanical behaviour of different bulk-micromachined microheater structures for chemoresistive gas sensors is investigated by means of 3D finite element simulation. Si3N4-SiO2-Si3N4 and SiO2-Si3N4-SiO2 stacked membranes are compared in terms of heat confinement and mechanical properties. The mechanical behaviour of the membrane and of two different suspended-bridge structures under applied external load is analysed. The present study served as a basis for the development of a microheater which hase shown excellent heating efficiency characteristics
Microfluidics for the treatment of hydrocephalus
No full textThe aim of this work consists in investigating how micro fluidic systems realized with different micro-electromechanical (MEMS) technologies and telemetry sensors can be applied in the treatment of the human disease called hydrocephalus. In particular we will evaluate system performances in terms of maximum allowable flowrate and valve efficiency
Compact modeling of n-side interstrip resistance in p-stop and p-spray isolated double-sided silicon microstrip detectors
No full textA compact, analytical model is derived for the n-side interstrip resistance of double-sided silicon microstrip detectors, allowing for fast and accurate prediction of the minimum p-stop (or p-spray) implant dose ensuring adequate interstrip isolation. The basic idea on which the proposed model relies is that the portion of the detector between two adjacent n-strips can effectively be assimilated to an equivalent n-channel MOSFET. The interstrip resistance can be evaluated as the output resistance of such an equivalent MOSFET using standard SPICE-like models. The influence of radiation-induced oxide charge and p-stop (or p-spray) voltage can be incorporated into the model by simply including in the threshold voltage expression the induced flat-band voltage shift and body-effect term, respectively
Gate-length dependence of bulk generation lifetime and surface generation velocity measurement in high-resistivity silicon using gated diodes
No full textThe accuracy of the gated-diode method for extracting bulk generation lifetime and surface generation velocity in high resistivity silicon is shown to depend critically on the gate length of the adopted test device, as a result of nonidealities which are not accounted for by the measurement technique. Minimization of the surface generation velocity measurement error requires the gate length to be suitably reduced, while long gate devices are needed for accurate bulk generation lifetime extraction. Both parameters can be measured from a single test structure obtained by compenetrating a short gate device with a long gate one
Active pixel sensor architectures in standard CMOS technology for charged-particle detection
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