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    Degradation mechanism of Ti/Au and Ti/Pd/Au gate metallizations in GaAs MESFET's

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    Modifications of several dc parameters of GaAs MESFET’s induced by accelerated aging at 300°C have been investigated in a test pattern configuration. Two different gate metallization structures have been examined, namely GaAs/Ti/Au and GaAs/Ti/Pd/Au. The gate diode and the MESFET characteristics of the former degrade noticeably upon annealing, while they are less affected by the thermal treatments for the latter. This different behavior is probably induced by the formation of different compounds at the metal-GaAs interface, which modify the gate diode properties

    ALLUMINIO - MANUALE DEGLI IMPIEGHI

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    Il libro presenta un'ampia rassegna delle leghe di alluminio e delle loro applicazioni. Dopo un'introduzione di carattere metallurgico, vengono presentate le differenti tipologie di leghe, le tecnologie produttive e di trasformazione, le caratteristiche di impiego, le applicazioni più significative

    Going Beyond Counting First Authors in Author Co-citation Analysis

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    The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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