1,043 research outputs found
Photonic Molecules For Optical Signal Processing
No full textWe demonstrate how CMOS compatible photonic molecules (PM) can break the fundamental interdependence among quality factor (Q), channel spacing and size of microring resonators. Different PM architectures are presented for efficient and compact optical signal processing.5455Barea, L.A.M., Vallini, F., De Rezende, G.F.M., Frateschi, N.C., Spectral engineering with cmos compatible soi photonic molecules (2013) IEEE Photonics J., 5 (6), pp. 2202717-2202717Barea, L.A.M., Val Lini, F., Jarschel, P.F., Frateschi, N.C., Silicon technology compatible photonic molecules for compact optical signal processing (2013) Appl. Phys. Lett, 103 (20), p. 201102. , NovSouza, M.C.M.M., Barea, L.A.M., Vallini, F., Rezende, G.F.M., Wiederhecker, G.S., Frateschi, N.C., Embedded coupled microrings with high-finesse and close-spaced resonances for optical signal processing (2014) Opt. Express, 22 (9), pp. 10430-10438. , MayTzuang, L.D., Soltani, M., Lee, Y.H.D., Lipson, M., High rf carrier frequency modulation in silicon resonators by coupling adjacent free-spectral-range modes (2014) Opt. Lett, 39 (7), pp. 1799-1802. , AprXu, Q., Almeida, V.R., Lipson, M., Micrometer-scale all-optical wavelength converter on silicon (2005) Opt. Lett, 30 (20), pp. 2733-2735. , OctLi, Q., Zhang, Z., Liu, F., Qiu, M., Su, Y., Dense wavelength conversion and multicasting in a resonance-split silicon microring (2008) Appl. Phys. Lett, 93 (8), p. 081113. , Au
Ingaalas Multi-quantum- Well Electro-absorption Modulators For 10gb/s Uncooled Operation In The C-band
No full textInGaAlAs multi-quantum well (MQW) structures for the integration of semiconductor optical amplifiers (SOA) and Quantum Confined Stark Effect (QCSE) electro-absorption modulators (EAM) are demonstrated. Robust performance over a large temperature range is shown in hybrid modules integrating these devices and DFB lasers. Modulated output power in excess of 0 dBm, 1.7 dB maximum change in extinction ratio, and dispersion penalty of 1 dB for 1600 ps/nm propagation are demonstrated in a range of temperature operation over 80°C.3183188Zhang, J., Frateschi, N.C., Choi, W., Gebretsadik, H., Jambunathan, R., Bond, A.E., (2003) Electron Lett., 39, p. 1841. , accepted for publicationChoi, W., Bond, A.E., Zhang, J., Jambunathan, R., Foulk, H., O'Brien, S., Norman, J., Cao, H., (2002) IEEE J. Lightwave Technol., 20, p. 2052Choi, W., Frateschi, N.C., Zhang, J., Gebretsadik, H., Jambunathan, R., Bond, A.E., Norman, J., Wanamaker, C., (2003) Electron Lea., 39, p. 1
Stadium Cavity Optical Resonator Fabricated By Focused Ion Beam
No full textWe have fabricated micro-disk and micro-stadium optical resonators based on conventional InGaAsP/InP multi-quantum well laser epitaxial structures, using a hybrid process by Focused Ion Beam milling and selective wet chemical etching. Resonators with very smooth walls were obtained allowing the observation of optical modes of the stadia with a 15 nm separation. This modal separation is an evidence of the beating between stadium scar modes. © The Electrochemical Society.231455460Del'Haye, P., Schliesser, A., Arcizet, O., (2007) Nature, 450 (7173), p. 1214Heller, (1984) PRL, 53, p. 1515Bogomolny, (1988) PhysicaD, 31, p. 169Gmachl, C., (1998) Science, 280, p. 1556Munoz, S.N., VonZuben, A.A.G., Frateschi", N.C., (2009) JAP, 105, p.
Ingaasp/inp Qw Microdisk Laser Fabricated By Focused Ion Beam
No full textInGaAsP/InP quantum wells microdisk lasers were fabricated for the evaluation of Ga+ Focused Ion Beam milling of mirrors. Electrical and optical proprieties were investigated and the effects of the milling in the sidewalls were investigated. © 2009 Optical Society of America.Valhala, K.J., Optical Microcavities (2003) Nature, 424, p. 839Mialichi, J.R., Barea, L., von Zuben, A.A., Frateschi, N.C., "Observation of Resonance Modes in InAs/InGaAsP/InP Quantum Dot Microdisk Resonators" (2008), 505. , Electrochemical Society Transactions Microelectronics Technology and Devices. (Pennington NJ USA: Electrochemical Society), v. 14Kim, Y.K., Danner, A.J., Raftery, Jr.J.J., Choquette, K.D., "Focused ion beam nanopatterning for optoelectronic device fabrication," (2005) IEEE J. Sel. Topics Quantum Electron., 11, pp. 1292-1298Schrauwen, J., Van Lysebettens, J., Claes, T., De Vos, K., Bienstman, P., Van Thourhout, D., Baets, R., "Focused-ion-beam fabrication of slots in silicon waveguides and ring resonators" (2008) IEEE Photonics Technol. Lett., 20, pp. 2004-2006Vallini, F., Figueira, D.S.L., Jarschel, P.F., Barea, L.A.M., von Zuben, A.A.G., Filho, A.S., Frateschi, N.C., ".Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam" in arXiv:0904.096
Analysis Of Focused Ion Beam Damages In Optoelectronic Devices Fabrication
No full textA study of the damages caused by gallium focused ion beam (FIB) is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compound milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and the formation of metallic clusters. Microdisks resonators are fabricated using FIB milling of different emission currents. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases. © The Electrochemical Society.391299305Electronics and Photonics,IEEE/EDS,ECS,Brazilian Computer Society,Brazilian Microelectronics SocietyVallini, F., Figueira, D.S.L., Jarschel, P.F., Barea, L.A.M., Von Zuben, A.A.G., Filho, A.S., Frateschi, N.C., (2009) J. Vac. Sci. Technol. B, 27, pp. L25Barea, L.A.M., Vallini, F., Vaz, A.R., Mialichi, J.R., Frateschi, N.C., Low-roughness active microdisk resonators fabricated by focused ion beam (2009) J. Vac. Sci. Technol. B, 27, p. 6Chen, H., McKay, H.A., Feenstra, R.M., Aers, G.C., Poole, P.J., Williams, R.L., Charbonneau, S., Mitchell, I.V., (2001) J. Appl. Phys., 89, p. 4815Ziegler, J.F., Biersack, J.P., Littmark, U., (1984) The Stopping and Range of Ions in Solids, 1. , Pergamon Press, New YorkKoren, U., Miller, B.I., Su, Y.K., Koch, T.L., Bowers, J.E., Low-internal-loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser (1987) Appl. Phys. Lett., 51, p. 1744. , TFrateschi, N.C., Levi, A.F.J., The Spectrum of Microdisk Lasers (1996) J. Appl. Phis, 80, p.
Electrically Pumped Metallo-dielectric Pedestal Nanolasers With High Thermal-conductivity Shield
No full textWe implement amorphous-Al2O3 as thermally-conductive shield in metallo-dielectric nanolasers, and demonstrate an electrically pumped device. Joint consideration of various design parameters reveals that this design allows the laser to dissipate heat through its shield, aiding thermal management in nanoscale devices.524525Lee, J.H., Khajavikhan, M., Simic, A., Gu, Q., Bondarenko, O., Slutsky, B., Nezhad, M.P., Fainman, Y., Electrically pumped sub-wavelength metallo pedestal pillar lasers (2011) Opt. Express, 19, pp. 21524-21531Ding, K., Hill, M., Liu, Z., Yin, L., Van Veldhoven, P., Ning, C., Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature (2013) Opt. Express, 21, pp. 4728-4733Ding, K., Ning, C., Metallic subwavelength semiconductor nanolasers (2012) Light: Sci. Appl, p. e20Ding, K., Ning, C., Fabrication challenges of electrical injection metallic cavity semiconductor nanolasers (2013) Semiconductor Science and Technology, 28, p. 124002Shane, J., Gu, Q., Vallini, F., Wingad, B., Smalley, J.S., Frateschi, N.C., Fainman, Y., Thermal considerations in electrically-pumped metallo-dielectric nanolasers (2014) SPIE OPTO, pp. 898027-898027Gu, Q., Shane, J., Vallini, F., Wingad, B., Smalley, J.S., Frateschi, N.C., Fainman, Y., Amorphous al2o3 shield for thermal management in electrically pumped metallo-dielectric nanolasers IEEE. J. Quantum. Electron, , acceptedChen, K.J., Huang, S., Aln passivation by plasma enhanced atomic layer deposition for gan switches and power amplifiers (2013) Semicond. Sci. Technol, 28, pp. 0740151-074015
Induced Optical Losses In Optoelectronic Devices Due Focused Ion Beam Damages
No full textA study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analyzes shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisks resonators are fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due optical scattering losses induced by implanted gallium atoms.728791Vallini, F., Figueira, D.S.L., Jarschel, P.F., Barea, L.A.M., von Zuben, A.A.G., Filho, A.S., Frateschi, N.C., Effects of Ga + milling on InGaAsP quantum well laser with mirrors milled by focused ion beam (2009) J. Vac. Sci. Technol. B, 27, pp. L25Barea, L.A.M., Vallini, F., Vaz, A.R., Mialichi, J.R., Frateschi, N.C., Low-roughness active microdisk resonators fabricated by focused ion beam (2009) J. Vac. Sci. Technol. B, 27, p. 6Chen, H., McKay, H.A., Feenstra, R.M., Aers, G.C., Poole, P.J., Williams, R.L., Charbonneau, S., Mitchell, I.V., InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy (2001) J. Appl. Phys, 89, p. 4815Ziegler, J.F., Biersack, J.P., Littmark, U., (1984) The Stopping and Range of Ions In Solids, 1. , Pergamon Press, New YorkFrateschi, N.C., Levi, A.F.J., The spectrum of microdisk lasers (1996) J. Appl. Phis, 80, p. 2Koren, U., Miller, B.I., Su, Y.K., Koch, T.L., Bowers, J.E., Low Internal Loss Separate Confinement Heterostructure InGaAs/InGaAsP Quantum Well Laser (1987) Appl. Phys. Lett, 51, p. 1744. , p
Analysis Of A High Sensitivity Optical Micro Sensor Based On Stadium Optical Resonators
No full textWe present an analysis of the spectral behavior of a stadium optical cavity under small perturbation of its effective index of refraction for the development of a resonant optical sensor. A dimensional reduction up to 1000 time with respect to conventional Mach-Zehnder interferometers without the need for an external light source is shown. Also, discontinuous behavior in the spectrum is shown to be very suitable for a trigger function application.PV 2005-085459Prieto, F., Sepúlveda, B., Calle, A., Liobera, A., Dominguez, C., Abad, A., Montoya, A., Lechuga, M.L., (2003) Nanotechnology, 14Rosen, N.A., Charash, W.E., Hirsh, E.F., (2002) J. Surgical Res., 106Schipper, E.F., Brugman, A.M., Dominguez, C., Lechuga, L.M., Kooyman, R.P.H., (1997) J. Greve, Sensor and Actuators B, 40Boyd, R.W., Heebner, J.E., (2001) Appl. Optics, 40, p. 31Heller, E.J., (1984) Phys. Ver. Lett., 53, p. 1515Mestanza, S.N.M., Von Zuben, A.A., Frateschi, N.C., Proceedings of Future Trends in Microeletronic Workshop/2001, , Ile de Bendor, France (June 25-29)Hakki, B.W., Paoli, T.L., (1975) J. Appl. Phys., 46 (3), p. 1299Hong, S.-C., Kothiyal, G.P., Debbar, N., Bhattacharya, P., Singh, J., (1988) Phys. Rev. B, 37, p. 87
A-siox<er> Active Photonic Crystal Resonator Membrane Fabricated By Focused Ga+ Ion Beam
No full textWe have fabricated thin erbium-doped amorphous silicon suboxide (a-SiOx) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of ∼2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling. © 2012 Optical Society of America.20171877218783Pavesi, L., Lockwood, D.J., Silicon photonics (2004) Topics in Applied Physics, , SpringerEnnen, H., Scheneider, J., Pomrenke, G., Axmann, A., 1.54m luminescence of erbium?implanted III?V semiconductors and silicon (1983) Appl. Phys. Lett., 43 (10), pp. 943-945Tessler, L.R., Erbium in a-Si:H (1999) Braz. J. Phys., 29 (4), pp. 616-622Bradley, J.D.B., Pollnau, M., Erbium-doped integrated waveguide amplifiers and lasers (2011) Laser Photon. Rev., 5 (3), pp. 368-403Painter, O., Vuckovic, J., Scherer, A., Defect modes of a two-dimensional photonic crystal in an optically thin dielectric slab (1999) J. Opt. Soc. Am. B, 16 (2), pp. 275-285Makarova, M., Sih, V., Warga, J., Li, R., Dal Negro, L., Vuckovic, J., Enhanced light emission in photonic crystal nanocavities with erbium-doped silicon nanocrystals (2008) Appl. Phys. Lett., 92 (16), p. 161107Gong, Y., Makarova, M., Yerci, S., Li, R., Stevens, M.J., Baek, B., Nam, S.W., Dal Negro, L., Linewidth narrowing and Purcell enhancement in photonic crystal cavities on an Er-doped silicon nitride platform (2010) Opt. Express, 18 (3), pp. 2601-2612Gong, Y., Makarova, M., Yerci, S., Li, R., Stevens, M.J., Baek, B., Nam, S.W., Vuckovic, J., Observation of transparency of erbium-doped silicon nitride in photonic crystal nanobeam cavities (2010) Opt. Express, 18 (13), pp. 13863-13873Quan, Q., Burgess, I.B., Tang, S.K.Y., Floyd, D.L., Loncar, M., High-Q, low index-contrast polymeric photonic crystal nanobeam cavities (2011) Opt. Express, 19 (22), pp. 22191-22197Gong, Y., Vukovi, J., Photonic crystal cavities in silicon dioxide (2010) Appl. Phys. Lett., 96 (3), p. 031107Gong, Y., Ishikawa, S., Cheng, S., Gunji, M., Nishi, Y., Vukovi, J., Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals (2010) Phys. Rev. B, 81 (23), p. 235317Kreuzer, C., Riedrich-Möller, J., Neu, E., Becher, C., Design of photonic crystal microcavities in diamond films (2008) Opt. Express, 16 (3), pp. 1632-1644Barth, M., Nüsse, N., Stingl, J., Löchel, B., Benson, O., Emission properties of high-Q silicon nitride photonic crystal heterostructure cavities (2008) Appl. Phys. Lett., 93 (2), p. 021112Makarova, M., Vuckovic, J., Sanda, H., Nishi, Y., Silicon based photonic crystal nanocavity light emitters (2006) Appl. Phys. Lett., 89 (22), p. 221101Hennessy, K., Högerle, C., Hu, E., Badolato, A., Imamolu, A., Tuning photonic nanocavities by atomic force microscope nano-oxidation (2006) Appl. Phys. Lett., 89 (4), p. 041118Nozaki, K., Kita, S., Baba, T., Room temperature continuous wave operation and controlled spontaneous emission in ultrasmall photonic crystal nanolaser (2007) Opt. Express, 15 (12), pp. 7506-7514Figueira, D.S.L., Mustafa, D., Tessler, L.R., Frateschi, N.C., Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm (2009) J. Vac. Sci. Technol. B, 27 (6), pp. L38-L41Lang, R., Figueira, D.S.L., Vallini, F., Frateschi, N.C., Highly luminescent a-SiOx/SiO2/Si multilayer structure (2012) IEEE Photon. J., 4 (4), pp. 1115-1123Tandaechanurat, A., Iwamoto, S., Nomura, M., Kumagai, N., Arakawa, Y., Increase of Q-factor in photonic crystal H1-defect nanocavities after closing of photonic bandgap with optimal slab thickness (2008) Opt. Express, 16 (1), pp. 448-455Babinec, T.M., Choy, J.T., Smith, K.J.M., Khan, M., Lonar, M., Design and focused ion beam fabrication of single crystal diamond nanobeam cavities (2011) J. Vac. Sci. Technol. B, 29 (1), p. 010601Riedrich-Möller, J., Kipfstuhl, L., Hepp, C., Neu, E., Pauly, C., Mücklich, F., Baur, A., Becher, C., One- and two-dimensional photonic crystal microcavities in single crystal diamond (2011) Nat. Nanotechnol., 7 (1), pp. 69-74Chelnokov, A., Wang, K., Rowson, S., Garoche, P., Lourtioz, J.-M., Near-infrared Yablonovitelike photonic crystals by focused-ion-beam etching of macroporous silicon (2000) Appl. Phys. Lett., 77 (19), pp. 2943-2945Barea, L.A.M., Vallini, F., Vaz, A.R., Mialichi, J.R., Frateschi, N.C., Low-roughness active microdisk resonators fabricated by focused ion beam (2009) J. Vac. Sci. Technol. B, 27 (6), pp. 2979-2981Vallini, F., Barea, L.A.M., Dos Reis, E.F., Von Zuben, A.A., Frateschi, N.C., Focused ion beam damages induced optical losses in optoelectronic devices JICS, , to be publishedWiederhecker, G.S., Manipatruni, S., Lee, S., Lipson, M., Broadband tuning of optomechanical cavities (2011) Opt. Express, 19 (3), pp. 2782-2790Chan, J., Alegre, T.P.M., Safavi-Naeini, A.H., Hill, J.T., Krause, A., Gröblacher, S., Aspelmeyer, M., Painter, O., Laser cooling of a nanomechanical oscillator into its quantum ground state (2011) Nature, 478 (7367), pp. 89-92Ryu, H., Park, H., Lee, Y., Two-dimensional photonic crystal semiconductor lasers: Computational design, fabrication, and characterization (2002) IEEE J. Sel. Top. Quant Electron., 8 (4), pp. 891-908Nomura, M., Kumagai, N., Iwamoto, S., Ota, Y., Arakawa, Y., Photonic crystal nanocavity laser with a single quantum dot gain (2009) Opt. Express, 17 (18), pp. 15975-15982Sridharan, D., Bose, R., Kim, H., Solomon, G.S., Waks, E., A reversibly tunable photonic crystal nanocavity laser using photochromic thin film (2011) Opt. Express, 19 (6), pp. 5551-5558Khorasani, S., Mehrany, K., Differential transfer-matrix method for solution of one-dimensional linear nonhomogeneous optical structures (2003) J. Opt. Soc. Am. B, 20 (1), pp. 91-96http://www.rsoftdesign.com/Tang, Y., Mintairov, A.M., Merz, J.L., Tokranov, V., Oktyabrsky, S., Characterization of 2D-Photonic Crystal Nanocavities by Polarization-Dependent and Near-Field Photoluminescence (2005) Proceedings of IEEE Conference on Nanotechnology, pp. 35-38. , Nagoya, JapanFigueira, D.S.L., Frateschi, N.C., Evidences of the simultaneous presence of bow-tie and diamond scars in rare-earth doped amorphous silicon microstadium resonators (2008) J. Appl. 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Evidences Of The Simultaneous Presence Of Bow-tie And Diamond Scars In Rare-earth Doped Amorphous Silicon Microstadium Resonators
No full textMicrodisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H 〈Er〉) layers sandwiched in air and native Si O2 on Si substrates. Annealing condition is optimized to allow large emission at 1550 nm for samples with erbium concentrations as high as 1.02× 1020 atoms cm3. Near field scanning optical microscopy shows evidence of the simultaneous presence of bow-tie and diamond scars. These modes indicate the high quality of the resonators and the potentiality for achieving amorphous silicon microcavity lasers. © 2008 American Institute of Physics.1036Frateschi, N.C., Levi, A.F.J., (1996) J. Appl. Phys., 80, p. 644. , JAPIAU 0021-8979 10.1063/1.362873McCall, S.L., Levi, A.F.J., Slusher, R.E., Pearton, S.J., Logan, R.A., (1992) Appl. Phys. Lett., 60, p. 289. , APPLAB 0003-6951 10.1063/1.106688Gmachl, C., Capasso, F., Narimanov, E.E., Nockel, J.U., Stone, A.D., Faist, J., Sivco, D.L., Cho, A., (1998) Science, 280, p. 1556. , SCIEAS 0036-8075 10.1126/science.280.5369.1556Judd, B.R., (1962) Phys. Rev., 127, p. 750. , PHRVAO 0031-899X 10.1103/PhysRev.127.750Desurvire, E., (1994) Erbium-Doped Fiber Amplifiers, , (Wiley, New York)Kühne, H., Weiser, G., Terukov, E.I., Kusnetsov, A.N., Kudoyarova, V.Kh., (1999) J. Appl. Phys., 86, p. 896. , JAPIAU 0021-8979 10.1063/1.370820Fuhs, W., Ulber, I., Weiser, G., (1997) Phys. Rev. B, 56, p. 9545. , PRBMDO 0163-1829 10.1103/PhysRevB.56.9545Tessler, L.R., (1999) Braz. J. Phys., 29, p. 616. , BJPHE6 0103-9733Bresler, M.S., Gusev, O.B., Kudoyarova, V.Kh., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N., Sturm, A., (1995) Appl. Phys. Lett., 67, p. 3599. , APPLAB 0003-6951 10.1063/1.115330Shin, J.H., Serna, R., Hoven, G.N., Polman, A., Sark, W.G.J.H.M., Vrendenberg, A.M., (1996) Appl. Phys. Lett., 68, p. 997. , APPLAB 0003-6951 10.1063/1.116124Fredrickson, J.E., Waddell, C.N., Spitzer, W.G., Hubler, G.K., (1982) Appl. Phys. Lett., 40, p. 172. , APPLAB 0003-6951 10.1063/1.93032Hoyland, J.D., Sands, D., (2006) J. Appl. Phys., 99, p. 063516. , JAPIAU 0021-8979 10.1063/1.2186378Kalkman, J., Tchebotareva, A., Polman, A., Kippengerb, T.J., Min, B., Vahala, K.J., (2006) J. Appl. Phys., 99, p. 83103. , JAPIAU 0021-8979Polman, A., Min, B., Kalkman, J., Kippenberg, T.J., Vahala, K.J., (2004) Appl. Phys. Lett., 84, p. 1037. , APPLAB 0003-6951 10.1063/1.1646748Wintres, H.F., Kay, E., (1967) J. Appl. Phys., 38, p. 3928. , JAPIAU 0021-8979 10.1063/1.1709043Polman, A., (1997) J. Appl. Phys., 82, p. 1. , JAPIAU 0021-8979 10.1063/1.366265Heller, E.J., (1984) Phys. Rev. Lett., 53, p. 1515. , PRLTAO 0031-9007 10.1103/PhysRevLett.53.1515Bogomolny, E., (1988) Physica D, 31, p. 169. , PDNPDT 0167-2789 10.1016/0167-2789(88)90075-9Bunimovich, L.A., (1974) Funct. Anal. Appl., 8, p. 254. , FAAPBZ 0016-2663Lebental, M., Lauret, J.S., Hierle, R., Zyss, J., (2006) Appl. Phys. Lett., 88, p. 31108. , APPLAB 0003-6951Nockel, J.U., Stone, A.D., Chen, G., Grossman, H.L., Chang, R.K., (1996) Opt. Lett., 21, p. 1609. , OPLEDP 0146-9592Mestanza, S.N.M., Von Zuben, A.A., Frateschi, N.C., (2002) Future Trends in Microelectronics-The Nano Millennium, pp. 364-371. , in, edited by S. Luryi, J. Xu, and A. Zaslavsky (Wiley, New York
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