101,962 research outputs found
Gap-States Distribution in Amorphous-Silicon Films as Obtained by Photothermal Deflection Spectroscopy
No full textBrown Sequard Syndrome Secondary to Intraspinal Cervical Hemorrhage Associated with Cavernous Angioma and Warfarin Therapy
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Photothermal and Photoconductive Measurements of Low-Pressure Chemically Vapor-Deposited Amorphous-Silicon
No full textComparison between two accreditation models: joint commission and Iso 9001:2000 in rehabilitation departments and spinal unit in Province of Pavia
No full textImpatti organizzativi e di outcome del modello di accreditamento joint commission international in reparti di riabilitazione della provincia di Pavia
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Ritanserin vs amitriptyline in chronic headache disorders: effects on pain and affective parameters.
No full textHigh-Quality Hydrogenated Amorphous-Silicon Carbon Layers as Obtained by a Particular Photochemical Vapor-Deposition Method
No full textHydrogen bonding in amorphous silicon with use of the low-pressure chemical-vapor-deposition technique
No full textInfrared spectroscopy, elastic-recoil detection analysis (ERDA), and hydrogen evolution have been used to carefully determine the hydrogen content of low-pressure chemically-vapor-deposited a-Si:H films. The amount of hydrogen and the bonding character can be easily varied by changing the deposition conditions. The stretching peaks at approximately 2000 and approximately 2100 cm-1 have been deconvoluted and the integrals calibrated by means of ERDA. The results provide the exact calibration constants for both peaks, and the values for the dipole effective charge obtained so far are consistent with the theory. Hydrogen-effusion measurements show that it is fairly certain that the material presents a small amount of voids, if compared with plasma-deposited amorphous silicon, despite the fact that the approximately 2100-cm-1 peak can be detected in vibrational spectra. This result seems to confirm that the character of hydrogen bonding is not related to the amount of voids in the material. On the other hand, no presence of microcrystallites is detectable in Raman spectra and the sample quality, tested by means of photothermal-deflection spectroscopy, does not seem to depend on the relative strengths of the two stretching modes
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