167 research outputs found
Type-i Optical Emissions In Gesi Quantum Dots
No full textThe authors studied the optical emission of GeSi quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 °C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications. © 2007 American Institute of Physics.915Brunner, K., (2002) Rep. Prog. Phys., 65, p. 27Medeiros-Ribeiro, G., Bratkovski, A.M., Kamins, T.I., Ohlbert, D.A.A., Williams, R.S., (1998) Science, 279, p. 353Wan, J., Jin, G.L., Jiang, Z.M., Luo, Y.H., Liu, J.L., Wang, K.L., (2001) Appl. Phys. Lett., 78, p. 1763El Kurdi, M., Sauvage, S., Fishman, G., Boucaud, P., (2006) Phys. Rev. B, 73, p. 195327Yakimov, A.I., Dvurechenskii, A.V., Nikiforov, A.I., Bloshkin, A.A., Nenashev, A.V., Volodin, V.A., (2006) Phys. Rev. B, 73, p. 115333Dashiell, M.W., Denker, U., Müller, C., Costantini, G., Manzano, C., Kern, K., Schmidt, O.G., (2002) Appl. Phys. Lett., 80, p. 1279Larsson, M., Elfving, A., Holtz, P.O., Hansson, G.V., Ni, W.-X., (2003) Appl. Phys. Lett., 82, p. 4785Thewalt, M.L.W., Harrison, D.A., Reinhart, C.F., Wolk, J.A., Lafontaine, H., (1997) Phys. Rev. Lett., 79, p. 269Larsson, M., Elfving, A., Ni, W.-X., Hansson, G.V., Holtz, P.O., (2006) Phys. Rev. B, 73, p. 195319Schmidt, O.G., Eberl, K., (2000) Phys. Rev. B, 62, p. 16715Tudury, H.A.P., Nakaema, M.K.K., Iikawa, F., Brum, J.A., Ribeiro, E., Carvalho Jr., W., Bernussi, A.A., Gobbi, A.L., (2001) Phys. Rev. B, 64, p. 153301Gomes, P.F., Godoy, M.P.F., Nakaema, M.K.K., Iikawa, F., Lamas, T.E., Quivy, A.A., Brum, J.A., (2004) Phys. Status Solidi C, 3, p. 547De Godoy, M.P.F., Nakaema, M.K.K., Iikawa, F., Carvalho Jr. Wilson, Evaldo, R., Gobbi, A.L., (2004) Rev. Sci. Instrum., 75, p. 194
Effects Of Thermal Annealing On The Confined Electronic States Of Inxga1-xas/gaas Strained-layer Superlattices
No full textWe performed simultaneous Raman and absorption measurements on a In0.12Ga0.88As/GaAs strained layer superlattice which was submitted to annealing at 850°C. The observed changes in both types of spectra are used to construct a superlattice profile for the annealed sample from which we obtain values for the band off-set parameter (Qe), the interdiffusion coefficient (D) and the overall lattice constant of the annealed superlattice. © 1989.52273278Schlesinger, Kuech, (1986) Appl. Phys. Letters, 49, p. 519Lee, Schlesinger, Kuech, Interdiffusion of Al and Ga in (Al,Ga)As/GaAs superlattices (1987) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 5 B, p. 1187F. Iikawa, P. Motisuke, J.A. Brum, M.A. Sacilotti, A.P. Roth and R.A. Masut, J. Crystal Growth, in pressRoth, Sacilotti, Masut, D'Arcy, Watt, Sproule, Mitchell, (1986) App. Phys., Letters, 48, p. 1452Roth, Sacilotti, Masut, D'Arcy, Watt, Sproule, Mitchell, (1986) J. of Crystal Growth, 77, p. 571F. Iikawa, F. Cerdeira, C. Vazquez-Lopes, P. Motisuke, M.A. Sacilotti, A.P. Roth and R.A. Masut, Solid State Commun., in pressLandolt-Börnstein, (1982) Numerical Data and Functional Relationships in Science and Technology, vol. 3/17a, p. 218. , O. Madelung, Springer-Verlag, Berlin, New SeriesLandolt-Börnstein, (1982) Numerical Data and Functional Relationships in Science and Technology, vol. 3/17a, p. 297. , O. Madelung, Springer-Verlag, Berlin, New SeriesGoeth, Bimberg, Jürgensen, Selders, Solomonov, Glinskii, Razeghi, Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition (1983) Journal of Applied Physics, 54, p. 4543F. Iikawa, F. Cerdeira, C. Vazquez-Lopes, P. Motisuke, M.A. Sacilotti, A.P. Roth and M.A. Masut, Phys. Rev. B, in press. See also proceeding of the 19th International Conference on the Physics of Semiconductors, in pressMarzin, Charasse, Semage, (1985) Phys. Rev., 31 B, p. 8298Ji, Huang, Reddy, Henderson, Houdre, Morcoç, (1987) J. of Appl. Phys., 62, p. 3366Menendez, Pinczuk, Werder, Sputs, Miller, Sivco, Cho, Large valence-band offset in strained-layer In_{x}Ga_{1-x}As-GaAs quantum wells (1987) Physical Review B, 36 B, p. 816
Structural And Optical Properties Of Inp Quantum Dots Grown On Gaas (001)
No full textWe present structural and optical properties of type-II self-assembled InP/GaAs quantum dots using different techniques. The results reveal that the uncapped InP dots present an efficient optical emission and are partially relaxed: strain relaxation increases with the amount of InP deposited. The photoluminescence spectra show two optical emission bands associated to the quantum dots, in agreement with the bi-modal dot-height distribution observed by atomic force microscopy. We observed distinct photoluminescence results for uncapped and capped samples, which are mainly attributed to surface state and strain relaxation effects. A remarkable result is the large blue shift of the optical emission band from uncapped sample as compared to capped one for increasing excitation intensities. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.42238240Pistol, M.-E., Carlsson, N., Persson, C., Seifert, W., Samuelson, L., (1995) Appl. Phys. Lett, 67, p. 1438Persson, J., Hakanson, U., Johansson, M.K.J., Samuelson, L., Pistol, M.-E., (2005) Phys. Rev. B, 72, p. 085302Nakaema, M.K.K., Iikawa, F., Brasil, M.J.S.P., Ribeiro, E., Medeiros-Ribeiro, G., Carvalho Jr., W., Maialle, M.Z., Degani, M.H., (2002) Appl. Phys. Lett, 81, p. 2743de Godoy, M.P.F., Gomes, P.F., Nakaema, M.K.K., Caetano, R.A., Iikawa, F., Brasil, M.J.S.P., Bortoleto, J.R.R., Marques, G.E., (2006) Phys. Rev. B, 73, p. 33309Bortoleto, J.R.R., Gutiérrez, H.R., Cotta, M.A., Bettini, J., (2005) Appl. Phys. Lett, 87, p. 13105Casey Jr., H.G., Buehler, E., (1977) Appl. Phys. Lett, 30, p. 247Yablonovitch, E., Bhat, R., Zah, C.E., Gmitter, T.J., Koza, M.A., (1992) Appl. Phys. Lett, 60, p. 37
Exciton Binding Energy In Type Ii Quantum Dots
No full textWe investigated the optical properties of self-assembled InP/GaAs quantum dots using continuous-wave and time-resolved photoluminescence spectroscopy. The thermal activation energy, which is directly related to the exciton binding energy in this system, was obtained by photoluminescence measurements as a function of temperature. We obtained thermal activation energies of 6-9 meV for undoped quantum dots and 13 meV for the modulation-doped sample. Those values are in good agreement with calculated results. The dots presented a recombination time of- 0.8-1.1 ns, which is surprisingly small for a type-II system. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.42385388Huffaker, D.L., Park, G., Zou, Z., Shchekin, O.B., Deppe, D.G., (1998) Appl. Phys. Lett, 73 (18), p. 2564Schedelbeck, G., Wegscheider, W., Bichler, M., Abstreiter, G., (1997) Science, 278, p. 1792Lelong, P., Suzuki, K., Bastard, G., Sakaki, H., Arakawa, Y., (2000) Physica E, 7, p. 393Madureira, J.R., de Godoy, M.P.F., Brasil, M.J.S.P., Iikawa, F., to be publishedde Godoy, M.P.F., Gomes, P.F., Nakaema, M.K.K., Caetano, R.A., Iikawa, F., Brasil, M.J.S.P., Bortoleto, J.R.R., Marques, G.E., (2006) Phys. Rev. B, 73 (3), p. 33309Sanguinetti, S., Henini, M., Alessi, M.G., Capizzi, M., Frigeri, P., Franchi, S., (1999) Phys. Rev. B, 60 (11), p. 8276Fafard, S., Raymond, S., Wang, G., Leon, R., Leonard, D., Charbonneau, S., Merz, J.L., Bowers, J.E., (1996) Surf. Sci, 361-362, p. 778Hatami, F., Grundmann, M., Ledentsov, N.N., Heinrichsdorff, F., Heitz, R., Bohrer, J., Bimberg, D., Alferov, Z.I., (1998) Phys. Rev. B, 57 (8), p. 4635Paillard, M., Marie, X., Vanette, E., Amand, T., Kalevich, V.K., Kovsh, A.R., Zhukov, A.E., Ustinov, V.M., (2000) Appl. Phys. Lett, 76, p. 7
Optical properties of InN nanocolumns: Electron accumulation at InN non‐polar surfaces and dependence on the growth conditions
No full textEvidence For Photon Anti-bunching In Acoustically Pumped Dots
No full textWe demonstrate the controlled transfer of photoexcited carriers by a surface acoustic wave (SAW) between coupled quantum wells, wires, and dots grown on a semiconductor surface. The quantum wires and dots used in the experiments are embedded at photolithographically defined positions within an (Al,Ga)As/GaAs (311)A-oriented quantum well grown by molecular beam epitaxy. We give experimental evidence for the anti-bunching of photons emitted in a quantum dot pumped by electrons and holes transported from the quantum well by a surface acoustic wave. © 2009 Elsevier B.V. All rights reserved.421024972500Sogawa, T., Santos, P.V., Zhang, S.K., Eshlaghi, S., Wieck, A.D., Ploog, K.H., (2001) Phys. Rev. Lett., 87, pp. 276601-1Stotz, J.A.H., Hey, R., Santos, P.V., Ploog, K.H., (2005) Nat. Mater., 4, p. 585Couto Jr., O.D.D., Iikawa, F., Rudolph, J., Hey, R., Santos, P.V., (2007) Phys. Rev. Lett., 98, p. 036603Wiele, C., Haake, F., Rocke, C., Wixforth, A., (1998) Phys. Rev. A, 58, p. 2680Foden, C.L., Talyanskii, V.I., Milburn, G.J., Leadbeater, M.L., Pepper, M., (2000) Phys. Rev. A, 62, pp. 011803RHosey, T., Talyanskii, V., Vijendran, S., Jones, G.A.C., Ward, M.B., Unitt, D.C., Norman, C.E., Shields, A.J., (2004) Appl. Phys. Lett., 85, p. 491Bdefeld, C., Ebbecke, J., Toivonen, J., Sopanen, M., Lipsanen, H., Wixforth, A., (2006) Phys. Rev. B, 74 (3), p. 035407Ntzel, R., Menniger, J., Ramsteiner, M., Ruiz, A., Schnherr, H.-P., Ploog, K.H., (1996) Appl. Phys. Lett., 68, p. 1132De Lima Jr., M.M., Santos, P.V., (2005) Rep. Prog. Phys., 68, p. 1639Couto Jr., O.D.D., (2009) Nat. Photonics, 3, p. 64
Valence Band Anti-crossing In Gaas/algaas Quantum Wells Under Tensile Biaxial Strain
No full textWe present here the study of the effects of the biaxial tensile strain on the optical properties in GaAs/AlGaAs quantum wells using low-temperature photoluminescence and photoluminescence excitation techniques. We used a pressure cell that permits to apply a biaxial tensile strain on an epitaxial film up to ∼ 0.3 % (for GaAs). The strain was determined by the energy shift of the excitonic recombination of the own GaAs buffer layer of the sample. The results of the optical measurements show clear the strain effects on the light and heavy hole excitons transitions and also show their anti-crossing. This new results show that this system is appropriated to study optical properties involving resonant phenomena in semiconductor quantum wells. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.13547550Tudury, H.A.P., Nakaema, M.K.K., Iikawa, F., Brum, J.A., Ribeiro, E., Carvalho Jr., W., Bernussi, A.A., Gobbi, A.L., (2001) Phys. Rev. B, 64, p. 153301Thewald, M.L.W., Harrison, D.A., Heinhart, C.F., Wok, J.A., (1997) Phys. Rev. Lett., 79, p. 269Iikawa, F., Cerdeira, F., Vazquez-Lopes, C., Motisuke, P., Sacilotti, M.A., Masut, R.A., Roth, A.P., (1988) Phys. Rev. B, 38, p. 8473Landoldt-Börnstein, (1982) Numerical Data and Functional Relationships in Science and Technology, III-17A, p. 218. , edited by O. Madelung Springer-Verlag, Berlin, New SeriesMichler, P., Hangleiter, A., Moritz, A., Fuchs, G., Härle, V., Scholz, F., (1993) Phys. Rev. B, 48, p. 11991Gershoni, D., Vandenberg, J.M., Hamm, R.A., Temkin, H., Panish, M.B., (1987) Phys. Rev. B, 36, p. 1320Triques, A.L.C., Brum, J.A., (1994) Proc. of 22nd International Conference on the Physics of Semiconductors, 2, p. 1328. , Vancouver, edited by D. J. Lockwood World Scientifi
Carrier Dynamics In Stacked Inpgaas Quantum Dots
No full textWe investigated two stacked layers of InPGaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment. © 2007 American Institute of Physics.9112Goldstein, L., Glas, F., Marzin, M.J.Y., Charasse, N., Le Roux, G., (1985) Appl. Phys. Lett., 47, p. 1099Xie, Q., Madhkar, A., Chen, P., Kobayashi, N., (1995) Phys. Rev. Lett., 75, p. 2542Ledentsov, N.N., Shchukin, V.A., Grundmann, M., Kirstaedter, N., Böhmer, J., Schmidt, O., Bimberg, D., Heydenreich, J., (1996) Phys. Rev. B, 54, p. 8743Solomon, G.S., Trezza, J.A., Marchall, A.F., Harris Jr., J.S., (1996) Phys. Rev. Lett., 76, p. 952Sugiyama, Y., Nakata, Y., Futatsugi, T., Sugawara, M., Awano, Y., Yokoyama, N., (1996) Jpn. J. Appl. Phys., Part 2, 36, p. 158Schmidt, O.G., Kienzie, O., Hao, Y., Eberl, K., (1999) Appl. Phys. Lett., 74, p. 1272Chang, W.-H., Chen, W.-Y., Chou, A.-T., Hsu, T.-M., Chen, P.-S., Pei, Z., Lai, L.-S., (2003) J. Appl. Phys., 93, p. 4999Susuki, K., Hogg, R.A., Arakawa, Y., (1999) J. Appl. Phys., 85, p. 8349Sun, C.-K., Wang, G., Bowers, J.E., Brar, B., Blank, H.-R., Kroemer, H., Pilkuhn, M.H., (1996) Appl. Phys. Lett., 68, p. 1543Hatami, F., Grundmann, M., Ledentsov, N.N., Heinrichsdorff, F., Heitz, R., Böhrer, J., Bimberg, D., Alferov Zh., I., (1998) Phys. Rev. B, 57, p. 4635De Godoy, M.P.F., Gomes, P.F., Nakaema, M.K.K., Iikawa, F., Brasil, M.J.S.P., Caetano, R.A., Madureira, J.R., Bittencourt, A.C.R., (2006) Phys. Rev. B, 73, p. 033309Wang, B., Chua, S.-J., (2001) Appl. Phys. Lett., 78, p. 628Nakaema, M.K.K., Iikawa, F., Brasil, M.J.S.P., Ribeiro, E., Medeiros-Ribeiro, G., Carvalho Jr., W., Maialle, M.Z., Degani, M.H., (2002) Appl. Phys. Lett., 81, p. 2743Zundel, M.K., Specht, P., Eberl, K., Jin-Phillipp, N.Y., Phillipp, F., (1997) Appl. Phys. Lett., 71, p. 2972Sanguinetti, S., Henini, M., Grassi Alessi, M., Capizzi, M., Frigeri, P., Franchi, S., (1999) Phys. Rev. B, 60, p. 827
Identification of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers
No full textEffects Of A Nearby Mn Delta Layer On The Optical Properties Of An Ingaas/gaas Quantum Well
No full textWe investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks.11620Žutić, I., Fabian, J., Sarma, S.D., (2004) Rev. Mod. Phys., 76, p. 323Dielt, T., Ohno, H., (2014) Rev. Mod. Phys., 86, p. 187Tanaka, M., Ohya, S., Hai, P.N., (2014) Appl. Phys. Rev., 1, p. 011102Krebs, O., Benjamin, E., Lemaître, A., (2009) Phys. Rev. B, 80, p. 165315Gazoto, A.L., Brasil, M.J.S.P., Iikawa, F., Brum, J.A., Ribeiro, E., Danilov, Y.A., Vikhrova, O.V., Zvonkov, B.N., (2011) Appl. Phys. Lett., 98, p. 251901Ohno, H., (1998) Science, 281, p. 951Nazmul, A.M., Amemiya, T., Shuto, Y., Sugahara, S., Tanaka, M., (2005) Phys. Rev. Lett., 95, p. 017201Korenev, V.L., Akimov, I.A., Zaitsev, S.V., Sapega, V.F., Langer, L., Yakovlev, D.R., Danilov, Y.A., Bayer, M., (2012) Nat. Commun., 3, p. 959Bobrov, A.I., Vikhrova, O.V., Danilov, Y.A., Dorokhin, M.V., Drozdov, Y.N., Drozdov, M.N., Zvonkov, B.N., Pavlova, E.D., (2014) Bull. Russ. Acad. Sci. Phys., 78 (1), pp. 6-8Wurstbauer, U., Soda, M., Jakiela, R., Schuh, D., Weiss, D., Zweck, J., Wegscheider, W., (2009) J. Cryst. Growth, 311 (7), p. 2160Poggio, M., Myers, R.C., Stern, N.P., Gossard, A.C., Awschalom, D.D., (2005) Phys. Rev. B, 72, p. 235313Balanta, M.A.G., Brasil, M.J.S.P., Iikawa, F., Mendes, U.C., Brum, J.A., Maialle, M.Z., Danilov, Y.A., Zvonkov, B.N., (2013) J. Phys. D: Appl. Phys., 46, p. 215103Lee, K.-S., Lee, C.-D., Kim, Y., Noh, S.K., (2003) Solid State Commun., 128, p. 177Hou, H.Q., Staguhn, W., Takeyama, S., Miura, N., Segawa, Y., Aoyagi, Y., Namba, S., (1991) Phys. Rev. B, 43, p. 4152Wu, J.-W., Nurmikko, A.V., Quinn, J.J., (1986) Phys. Rev. B, 34, p. 1080(1986) Solid State Commun., 57, p. 853Gonc¸alves Da Silva, C.E.T., (1985) Phys. Rev. B, 32, p. 6962Zhang, X.-C., Chang, S.-K., Nurmikko, A.V., Kolodziejski, L.A., Gunshor, R.L., Datta, S., (1985) Phys. Rev. B, 31, p. 4056Zhang, X.-C., Chang, S.-K., Nurmikko, A.V., Kolodziejski, L.A., Gunshor, R.L., Datta, S., (1985) Solid State Commun., 56, p. 255Zhang, X.-C., Chang, S.-K., Nurmikko, A.V., Kolodziejski, L.A., Gunshor, R.L., Datta, S., (1985) Appl. Phys. Lett., 47, p. 59Yakovlev, D.R., Ossau, W., (2010) Introduction to the Physics of Diluted Magnetic Semiconductors, p. 221. , edited by J. Kosut and J. A. Gaj Springer, Chap. 7Preisler, V., Grange, T., Ferreira, R., De Vaulchier, L.A., Guldner, Y., Teran, F.J., Potemski, M., Lemaitre, A., (2006) Phys. Rev. B, 73, p. 075320Verzelen, O., Bastard, G., Ferreira, R., (2000) Phys. Rev. B, 62, p. R4809Verzelen, O., Bastard, G., Ferreira, R., (2002) Phys. Rev. B, 66, p. 081308RDickmann, S., Tartakovskii, A.I., Timofeev, V.B., Zhilin, V.M., Zeman, J., Martinez, G., Hvam, J.M., (2000) Phys. Rev. B, 62, p. 2743Lucovsky, G., Chen, M.F., (1970) Solid State Commun., 8, pp. 1397-140
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