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Modi e meccanismi di guasto dei MESFET al GaAs
No full textThis paper is a tutorial on the reliability of microwave semiconductor devices and in particular of GaAs MESFET
Text fixture for MESFET reliability life tests
No full textDC tests may be the method on which to found an unitary methodology for setting and analysis of GaAs MESFET reliability studies. Each failure mechanism must be stressed without introducing erroneous one, due to the artificial conditions of accelerated tests. A text fixture for these tests must enable the hgghest contro of aging conditions
Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devices
No full textChannel temperature Tch of GaAs MESFETs, determined by means of electrical measurements (ΔVgs), has been compared and correlated with thermal maps obtained by high resolution infrared microscopy. Results show that in low power devices with a small number of gates, the value of Tch derived from ΔVgs measurements is close to the maximum values of temperature measured on the hottest junctions on the chip. Local thermal inhomogeneities, in particular those observed in devices characterized by high values of Rth, can explain and confirm results of failure analyses of MESFETs submitted to accelerated life tests in operating conditions where degradation phenomena occur in localized areas of the device
Electromigration effects in power MESFET rectifying and ohmic contacts
No full textBoth gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined
Effects of high current and temperature in power MESFET metallization
No full textEffects of high current density and temperature closely combine to degrade power MESFETs during their operating life in radio-link systems. To understand failure mechanisms and distinguish between those accelerated by high current and/or by temperature, we have performed various dc tests and measured thermal resistance and thermal maps of tested devices
A Novel Highly-Scalable Matching Policy for Input-Queued Switcheswith Multiclass Traffic
No full text
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Correlation Between Fabrication Processes and Thermal Distribution In Medium Power Mesfets
No full textCorrelation between fabrication process and thermal distribution was evaluated by means of high resolution IR thermography in two 0.5 W MESFET structures, having the same layout but differing in the presence of via hole connections. The via hole structure allows a great improvement in device thermal behaviour, with decrease in Rth and more uniform thermal distribution. The effect of process variations, such as gate misalignments, on temperature distribution within the device active area was also evaluated
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
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