349,891 research outputs found
Ding projective and Ding injective modules over trivial ring extensions
No full textsummary:Let be a trivial extension of a ring by an --bimodule such that , , and have finite flat dimensions. We prove that is a Ding projective left -module if and only if the sequence is exact and is a Ding projective left -module. Analogously, we explicitly describe Ding injective -modules. As applications, we characterize Ding projective and Ding injective modules over Morita context rings with zero bimodule homomorphisms
Ding - Ding - Ding. Heimsuchungen in der Haushaltung
No full textKörte M. Ding - Ding - Ding. Heimsuchungen in der Haushaltung . Kultur & Gespenster. 2016;17:71-85
Efficient light confinement to λ/10 spot sizes in optical fibre
No full textLight confinement beyond the diffraction limit has been achieved in optical fibre tips. We successfully fabricated a gold-coated optical fibre tip with wedge-shaped apex for the efficient excitation of surface plasmon polaritons (SPPs). An improved transmissivity higher than 10-2 and spot sizes of the order of λ/10 have been obtained by optimizing the overall light throughput along the fibre tip
Das ding y los límites de la simbolización
No full textLa presente investigación "Das Ding y los límites de la simbolización, se enmarca en el proyecto de investigación "La melancolía. Del amor a la pulsión". El ...This research "Das Ding and the limits of symbolization", is part of research project "The melancholy.From love to drive". The aim is make an inquiry about t..
Introduction to the special section on cocreating the customer service experience with high tech and high touch
No full textPeer reviewe
Ding-graded modules and strongly Ding-graded modules(Ding分次模和强Ding分次模)
No full text研究了分次环R上的Ding分次投射（内射）R-模以及强Ding分次投射（内射）R-模，证明了任意分次环上的Ding分次投射（内射）模类是投射（内射）可解的.研究了强Ding分次投射（内射）R-模与Ding分次投射（内射）R-模之间的关系，以及强Ding分次投射（内射）R-模与非分次的强Ding投射（内射）R-模之间的关系.证明了对有限群分次环R，若M是强Ding投射（内射）R-模，则F(M)是强Ding分次投射（内射）的；若N是强Ding分次投射（内射)R-模，则U(N）是强Ding投射（内射）的
The relationship of the ADP-ribosylating enzyme from S. solfataricus with DING proteins and its intracellular localization
No full textThe PARPSso thermoprotein from Sulfolobus solfataricus has been identified as a PARP-like enzyme that cleaves -NAD+ to synthesize oligomers of ADP-ribose and cross-reacts with polyclonal anti-PARP-1 catalytic site antibodies. Despite the biochemical properties that allow to correlate it to PARP enzymes, the N-terminal and partial amino acid sequence suggest the sulfolobal enzyme belongs to a different class of enzymes, the DING proteins. Considering the high sequence identity with the human DING protein HPBP and the lack of a nucleotide coding sequence in both human and sulfolobal genomes, we hypothesized that PARPSso might share other features with the human DING. Further analysis of PARPSso amino acid sequence addressed the research towards studying other possible similarities between human and sulfolobal protein and then to explain how PARPSso correlates with canonic PARPs. For the latter question, the peculiar behaviour of the thermozyme, that is biochemically, but not structurally related to the classic PARPs, stimulated to investigate by computational analysis and databank, whether the protein might be phylogenetically related to any already known PARP amino acid sequence.
Moreover, immunochemical and enzymatic crossed analyses were performed to establish whether purified HPBP and PARPSso have common immunoreactive and functional behaviour.
The second part of the research was focused on the localization of PARPSso within the sulfolobal cell. Our interest to this item arose from the property of some DING proteins to be membrane bound, suggested to work as membrane transporters. On the other hand, from previous studies, it is known that PARPSso is only partially solubilized from the starting cell homogenate provided by ICMIB (CNR), and the soluble enzyme is strictly associated with DNA. In this thesis work, whole cells collected by centrifugation from culture medium were subjected to a different extraction procedure. This procedure included also experimental conditions used to differentiate between soluble (i.e. cytoplasmic) and insoluble (i.e. membrane-bound) protein fractions. PARPSso and DNA distributions were determined by enzyme assay, immunoblotting and agarose gel electrophoresis. Reciprocal interactions of thermozyme, nucleic acid and membrane lipids were investigated with different techniques and methodologies (nucleoid preparation, fluorescence binding assays, fluorescence microscopy analysis)
Gamma-irradiation effect on electrical properties of SiO2 gate dielectric of MOS structure
No full textThe total dose effect of 60Co gamma-irradiation on MOS (metal-oxide-semiconductor) structure of Al/SiO2/p-Si with different insulation layer thickness has been investigated in this article. MOS capacitors with oxide layer thickness of 5nm/19nm/29nm and electrode area of 1mm 2 were prepared using thermal oxidation method. Each structure was stressed with no bias during 60Co gamma-source irradiation with the total dose of 100k/500k/1Mrad. The low and high frequency C-V characteristic of each structure was measured at room temperature before and after gamma-irradiation. Besides of the electric properties, Atomic Force Microscopy (AFM), Grazing Incidence X-ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS) with Ar+ etching were also measured before and after different total dose gamma-irradiation. AFM results showed that the surface of the oxide was relatively smooth with the roughness under 5%. Low and high frequency C-V results indicated that the interfacial states between Si and SiO2 and oxide traps varied with insulation layer thickness and different total dose. On the other hand, the XRD property change under gamma irradiation differs with oxide layer thickness. And the Si 2p peak and O 1s peak result derived from the XPS drifted with different total dose and oxide layer thickness. These results offered necessary theory assistance for the nuclear hardening of the microelectronic devices with ultrathin insulation layer, which can advance the safety of weapons in the high-tech warfare. © 2012 IEEE
Pareuchiloglanis tianquanensis Ding & Fang 1997
No full textPareuchiloglanis tianquanensis Ding & Fang 1997 Pareuchiloglanis tianquanensis Ding & Fang 1997: 17, fig. 1. Type locality: Tianquan County [Yangtze drainage], Shichuan, China. Holotype: Mus. Sichuan Inst. Nat. Res. 920185. Paratypes: Mus. Sichuan Inst. Nat. Res. 920177-184 (8), 920186-205 (20). Distribution: Yangtze drainage, China (Ding & Fang, 1997).Published as part of Alfred W. Thomson & Lawrence M. Page, 2006, Genera of the Asian Catfish Families Sisoridae and Erethistidae (Teleostei: Siluriformes)., pp. 1-96 in Zootaxa 1345 on page 8
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